1,085 research outputs found
Nonlinear Transport of Graphene in the Quantum Hall Regime
We have studied the breakdown of the integer quantum Hall (QH) effect with
fully broken symmetry, in an ultra-high mobility graphene device sandwiched
between two single crystal hexagonal boron nitride substrates. The evolution
and stabilities of the QH states are studied quantitatively through the
nonlinear transport with dc Hall voltage bias. The mechanism of the QH
breakdown in graphene and the movement of the Fermi energy with the electrical
Hall field are discussed. This is the first study in which the stabilities of
fully symmetry broken QH states are probed all together. Our results raise the
possibility that the v=6 states might be a better target for the quantum
resistance standard.Comment: 15 pages,6 figure
Spin characterization and control over the regime of radiation-induced zero-resistance states
Over the regime of the radiation-induced zero-resistance states and
associated oscillatory magnetoresistance, we propose a low magnetic field
analog of quantum-Hall-limit techniques for the electrical detection of
electron spin- and nuclear magnetic- resonance, dynamical nuclear polarization
via electron spin resonance, and electrical characterization of the nuclear
spin polarization via the Overhauser shift. In addition, beats observed in the
radiation-induced oscillatory-magnetoresistance are developed into a method to
measure and control the zero-field spin splitting due to the Bychkov-Rashba and
bulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.Comment: IEEE Transactions in Nanotechnology (to be published); 10 pages, 10
color figure
Undoped Electron-Hole Bilayers in a GaAs/AlGaAs Double Quantum Well
We present the fabrication details of completely undoped electron-hole
bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30
nm barrier. These devices have independently tunable densities of the
two-dimensional electron gas and two-dimensional hole gas. We report
four-terminal transport measurements of the independently contacted electron
and hole layers with balanced densities from cm down
to cm at . The mobilities can exceed cm V s for electrons and
cm V s for holes.Comment: 3 pages, 3 figure
Quantum Transport in Semiconductor Nanostructures
I. Introduction (Preface, Nanostructures in Si Inversion Layers,
Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties).
II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak
Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron
Interactions, Quantum Size Effects, Periodic Potential).
III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point
Contacts, Coherent Electron Focusing, Collimation, Junction Scattering,
Tunneling).
IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective
Population and Detection of Edge Channels, Fractional Quantum Hall Effect,
Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band
Structure).Comment: 111 pages including 109 figures; this review from 1991 has retained
much of its usefulness, but it was not yet available electronicall
Towards a Graphene-Based Quantum Impedance Standard
Precision measurements of the quantum Hall resistance with alternating
current (ac) in the kHz range were performed on epitaxial graphene in order to
assess its suitability as a quantum standard of impedance. The quantum Hall
plateaus measured with alternating current were found to be flat within one
part in 10^7. This is much better than for plain GaAs quantum Hall devices and
shows that the magnetic-flux-dependent capacitive ac losses of the graphene
device are less critical. The observed frequency dependence of about
-8x10^-8/kHz is comparable in absolute value to the positive frequency
dependence of plain GaAs devices, but the negative sign is attributed to stray
capacitances which we believe can be minimized by a careful design of the
graphene device. Further improvements thus may lead to a simpler and more
user-friendly quantum standard for both resistance and impedance
- …