Multiplicador analógico CMOS baseado na relação transcondutância X corrente

Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia ElétricaO presente trabalho propõe um multiplicador operando em quarto quadrantes baseado em células que exploram a relação existente entre a corrente de saturação de um transistor MOS e a transcondutância de fonte. A vantagem da topologia proposta é simplicidade, operação com baixa potência, alta linearidade e corrente de saída com baixa sensibilidade dentro de uma mesma geração tecnológica. Os resultados de simulação associados aos experimentais demonstram a viabilidade da topologia escolhida para operação em baixa potência e baixa-tensão. A funcionalidade do sistema foi verificada através de simulação e da extração de parâmetros do protótipo implementado em tecnologia TSMC 0.35 m. Os resultados experimentais conseguidos com o protótipo indicam consumo de 1 mA, largura de banda de 1MHz e distorção harmônica total de 1% para uma corrente de entrada de 80 % do seu valor máximo sendo que a área de silício ocupada pelo multiplicador foi ao redor de 10.000 m2

A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD), floating-gate (FG) and quasi-floating-gate (QFG) techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA) base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 µW. PSpice simulation results using the 0.18 µm CMOS technology from TSMC are included to verify the design functionality and correspondence with theory

1.5-V CMOS Current Multiplier/Divider

A circuit technique for designing a compact low-voltage current-mode multiplier/divider circuit in CMOS technology is presented.  It is based on the use of a compact current quadratic cell able to operate at low supply voltage.  The proposed circuit is designed and simulated for implementing in TSMC 0.25-m CMOS technology with a single supply voltage of 1.5 V.  Simulation results using PSPICE, accurately agreement with theoretical ones, have been provided, and also demonstrate a maximum linearity error of 1.5%, a THD less than 2% at 100 MHz, a total power consumption of 508 W, and -3dB small-signal frequency of about 245 MHz

New Possibilities In Low-voltage Analog Circuit Design Using Dtmos Transistors

(Doktora) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2013(PhD) -- İstanbul Technical University, Institute of Science and Technology, 2013Bu çalışmada DTMOS yaklaşımı çok düşük besleme gerilimlerinde çalışan çok düşük güç tüketimli devrelere başarıyla uygulanmıştır. Tasarlanan devreler arasında OTA, OP-AMP, CCII gibi analog aktif yapı blokları, çarpma devresi, sadece-MOS yapılar gibi devreler bulunmaktadır. Tasarlanan devreler SPICE benzetimleri ile doğrulanmıştır. İleri yönde gövde kutuplamaya bağlı olarak DTMOS transistorun yapısından kaynaklanan, efektif olarak düşük eşik gerilimli çalışma özelliği nedeniyle, çok düşük güç tüketimli ve çok düşük gerilimli devrelerde DTMOS yaklaşımının geçerli bir alternatif olduğu bu çalışmayla gösterilmiştir. DTMOS yaklaşımının geniş bir alanda çeşitlilik gösteren analog devre yapılarında çok düşük besleme gerilimlerinde bile kabul edilebilir bir performansla kullanılabileceği bulunmuştur.In this study, DTMOS approach to the design of ultra low-voltage and ultra low-power analog circuits, has been successfully applied to the circuits ranging from EEG filtering circuits, speech processing filters in hearing aids, multipliers, analog active building blocks: OTA, OP-AMP, CCII to MOS-only circuits. The proposed circuits are verified with SPICE simulations. It is found that in designing ultra low-voltage, ultra low-power analog circuits, DTMOS approach is a viable alternative due to its inherent characteristic of effective low threshold voltage behaviour under forward body bias. This approach can be applied to several analog application subjects with acceptable performance under even ultra low supply voltages.DoktoraPh

Techniques of Energy-Efficient VLSI Chip Design for High-Performance Computing

How to implement quality computing with the limited power budget is the key factor to move very large scale integration (VLSI) chip design forward. This work introduces various techniques of low power VLSI design used for state of art computing. From the viewpoint of power supply, conventional in-chip voltage regulators based on analog blocks bring the large overhead of both power and area to computational chips. Motivated by this, a digital based switchable pin method to dynamically regulate power at low circuit cost has been proposed to make computing to be executed with a stable voltage supply. For one of the widely used and time consuming arithmetic units, multiplier, its operation in logarithmic domain shows an advantageous performance compared to that in binary domain considering computation latency, power and area. However, the introduced conversion error reduces the reliability of the following computation (e.g. multiplication and division.). In this work, a fast calibration method suppressing the conversion error and its VLSI implementation are proposed. The proposed logarithmic converter can be supplied by dc power to achieve fast conversion and clocked power to reduce the power dissipated during conversion. Going out of traditional computation methods and widely used static logic, neuron-like cell is also studied in this work. Using multiple input floating gate (MIFG) metal-oxide semiconductor field-effect transistor (MOSFET) based logic, a 32-bit, 16-operation arithmetic logic unit (ALU) with zipped decoding and a feedback loop is designed. The proposed ALU can reduce the switching power and has a strong driven-in capability due to coupling capacitors compared to static logic based ALU. Besides, recent neural computations bring serious challenges to digital VLSI implementation due to overload matrix multiplications and non-linear functions. An analog VLSI design which is compatible to external digital environment is proposed for the network of long short-term memory (LSTM). The entire analog based network computes much faster and has higher energy efficiency than the digital one

Can deep-sub-micron device noise be used as the basis for probabilistic neural computation?

This thesis explores the potential of probabilistic neural architectures for computation with future nanoscale Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). In particular, the performance of a Continuous Restricted Boltzmann Machine {CRBM) implemented with generated noise of Random Telegraph Signal (RTS) and 1/ f form has been studied with reference to the 'typical' Gaussian implementation. In this study, a time domain RTS based noise analysis capability has been developed based upon future nanoscale MOSFETs, to represent the effect of nanoscale MOSFET noise on circuit implementation in particular the synaptic analogue multiplier which is subsequently used to implement stochastic behaviour of the CRBM. The result of this thesis indicates little degradation in performance from that of the typical Gaussian CRBM. Through simulation experiments, the CRBM with nanoscale MOSFET noise shows the ability to reconstruct training data, although it takes longer to converge to equilibrium. The results in this thesis do not prove that nanoscale MOSFET noise can be exploited in all contexts and with all data, for probabilistic computation. However, the result indicates, for the first time, that nanoscale MOSFET noise has the potential to be used for probabilistic neural computation hardware implementation. This thesis thus introduces a methodology for a form of technology-downstreaming and highlights the potential of probabilistic architecture for computation with future nanoscale MOSFETs

MODELING AND SPICE IMPLEMENTATION OF SILICON-ON-INSULATOR (SOI) FOUR GATE (G4FET) TRANSISTOR

As the device dimensions have reduced from micrometer to nanometer range, new bulk silicon devices are now facing many undesirable effects of scaling leading device engineers to look for new process technologies. Silicon-on-insulator (SOI) has emerged as a very promising candidate for resolving the major problems plaguing the bulk silicon technology. G4FET [G4FET] is a SOI transistor with four independent gates. Although G4FET has already shown great potential in different applications, the widespread adoption of a technology in circuit design is heavily dependent upon good SPICE (Simulation Program with Integrated Circuit Emphasis) models. CAD (Computer Aided Design) tools are now ubiquitous in circuit design and a fast, robust and accurate SPICE model is absolutely necessary to transform G4FET into a mainstream technology. The research goal is to develop suitable SPICE models for G4FET to aid circuit designers in designing innovative analog and digital circuits using this new transistor. The first phase of this work is numerical modeling of the G4FET where four different numerical techniques are implemented, each with its merits and demerits. The first two methods are based on multivariate Lagrange interpolation and multidimensional Bernstein polynomial. The third numerical technique is based on multivariate regression polynomial to aid modeling with dense gridded data. Another suitable alternative namely multidimensional linear and cubic spline interpolation is explored as the fourth numerical modeling approach to solve some of the problems resulting from single polynomial approximation. The next phase of modeling involves developing a macromodel combining already existing SPICE models of MOSFET (metal–oxide–semiconductor field-effect transistor) and JFET (junction-gate field-effect transistor). This model is easy to implement in circuit simulators and provides good results compared to already demonstrated experimental works with innovative G4FET circuits. The final phase of this work involves the development of a physics-based compact model of G4FET with some empirical fitting parameters. A model for depletion-all-around operation is implemented in circuit simulator based on previous work. Another simplified model, combining MOS and JFET action, is implemented in circuit simulator to model the accumulation mode operation of G4FET

Power-efficient current-mode analog circuits for highly integrated ultra low power wireless transceivers

In this thesis, current-mode low-voltage and low-power techniques have been applied to implement novel analog circuits for zero-IF receiver backend design, focusing on amplification, filtering and detection stages. The structure of the thesis follows a bottom-up scheme: basic techniques at device level for low voltage low power operation are proposed in the first place, followed by novel circuit topologies at cell level, and finally the achievement of new designs at system level. At device level the main contribution of this work is the employment of Floating-Gate (FG) and Quasi-Floating-Gate (QFG) transistors in order to reduce the power consumption. New current-mode basic topologies are proposed at cell level: current mirrors and current conveyors. Different topologies for low-power or high performance operation are shown, being these circuits the base for the system level designs. At system level, novel current-mode amplification, filtering and detection stages using the former mentioned basic cells are proposed. The presented current-mode filter makes use of companding techniques to achieve high dynamic range and very low power consumption with for a very wide tuning range. The amplification stage avoids gain bandwidth product achieving a constant bandwidth for different gain configurations using a non-linear active feedback network, which also makes possible to tune the bandwidth. Finally, the proposed current zero-crossing detector represents a very power efficient mixed signal detector for phase modulations. All these designs contribute to the design of very low power compact Zero-IF wireless receivers. The proposed circuits have been fabricated using a 0.5μm double-poly n-well CMOS technology, and the corresponding measurement results are provided and analyzed to validate their operation. On top of that, theoretical analysis has been done to fully explore the potential of the resulting circuits and systems in the scenario of low-power low-voltage applications.Programa Oficial de Doctorado en Tecnologías de las Comunicaciones (RD 1393/2007)Komunikazioen Teknologietako Doktoretza Programa Ofiziala (ED 1393/2007