7.5 Gb/s monolithically integrated clock recovery circuit using PLL and 0.3-μm gate length quantum well HEMT's

A monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well-high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO was applied. The VCO has a center oscillating frequency of about 7.7 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at a bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at a supply voltage of -5 V

A 2.5 ns 8 x 8-b parallel multiplier using 0.5 μm GaAs/GaAlAs heterostructure field effect transistors

To increase performance of GaAs LSI digital circuits, a 0.5 μm recessed gate process has been developed and utilized for an 8x8-b parallel multiplier. The chip contains about 3000 heterostructure field effect transistors and has a power consumption of 1.5 W. The best results of the maximum multiplication time measured were below 2.5 nsec

7.5 Gb/s monolithically integrated clock recovery using PLL and 0.3 μM gate length quantum well HEMTs

A monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO has been introduced. The VCO has a centre oscillating frequency of about 7.5 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at the bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at the supply voltage of -5 V

Digital dynamic frequency dividers for broad band application up to 60 GHz

A broadband dynamic frequency divider based on pseudomorphic Al0.2Ga0.8As/In0.25Ga0.75As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs MODFET process

18 Gbit/s monolithically integrated 2:1 multiplexer and laser driving using 0.3 μm gate length quantum well HEMTs

A monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quantum well HEMTs of 0.3 μm gate length. The DC and modulation current is 25 and 45 mA, respectively. Open eye diagrams were measured at bit rates up to 18 Gbit/s with pseudorandom data streams

8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs

An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 Omega output buffer has been fabricated using an enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated

10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs

A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 μm recessed-gate AlGaAs/GaAs HEMTs. A -3 dB bandwidth of 11.3 GHz has been achieved

In vivo hippocampal subfield volumes in bipolar disorder—A mega-analysis from The Enhancing Neuro Imaging Genetics through Meta-Analysis Bipolar Disorder Working Group

The hippocampus consists of anatomically and functionally distinct subfields that may be differentially involved in the pathophysiology of bipolar disorder (BD). Here we, the Enhancing NeuroImaging Genetics through Meta‐Analysis Bipolar Disorder workinggroup, study hippocampal subfield volumetry in BD. T1‐weighted magnetic resonance imaging scans from 4,698 individuals (BD = 1,472, healthy controls [HC] = 3,226) from 23 sites worldwide were processed with FreeSurfer. We used linear mixed‐effects models and mega‐analysis to investigate differences in hippocampal subfield volumes between BD and HC, followed by analyses of clinical characteristics and medication use. BD showed significantly smaller volumes of the whole hippocampus (Cohen's d = −0.20), cornu ammonis (CA)1 (d = −0.18), CA2/3 (d = −0.11), CA4 (d = −0.19), molecular layer (d = −0.21), granule cell layer of dentate gyrus (d = −0.21), hippocampal tail (d = −0.10), subiculum (d = −0.15), presubiculum (d = −0.18), and hippocampal amygdala transition area (d = −0.17) compared to HC. Lithium users did not show volume differences compared to HC, while non‐users did. Antipsychotics or antiepileptic use was associated with smaller volumes. In this largest study of hippocampal subfields in BD to date, we show widespread reductions in nine of 12 subfields studied. The associations were modulated by medication use and specifically the lack of differences between lithium users and HC supports a possible protective role of lithium in BD

Nadelanordnung zum Abheben eines Chips von einem Trägermaterial

Die vorliegende Anmeldung betrifft eine Nadelanordnung zum Abheben eines Chips von einem Trägermaterial, wobei der Chip eine viereckförmige erste Fläche aufweist, und an eine der Seiten der viereckförmigen ersten Fläche daran vorspringend eine viereckförmige zweite Fläche anschliesst, wobei die Seite der zweiten Fläche, mit der diese an die Seite der ersten Fläche anschliesst wesentlich kürzer ist als die Seite der ersten Fläche, dadurch gekennzeichnet, dass die Nadelanordnung derart angeordnet ist, dass eine erste Nadel in der ersten Fläche beim Anheben des Chips ansetzt und mindestens eine zweite Nadel in der zweiten Fläche des Chips ansetzt, um ein Abbrechen der ersten Fläche von der zweiten Fläche beim Abheben des Chips zu verhindern