Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

To assess diamond-based semiconducting devices, a reduction of point defect levels and an accurate control of doping are required as well as the control of layer thickness. Among the analyses required to improve such parameters, cross sectional studies should take importance in the near future. The present contribution shows how FIB (focused ion beam) preparations followed by electron microscopy related techniques as TEM or CL allowed to performanalysis versus depth in the layer, doping and point defect levels. Three samples grown along the sameweek in the same machinewith identical growth conditions but on different substrates (CVD-IIIa (110) oriented, CVD-optical grade (100) oriented and a HPHT-Ib (100) oriented) are studied. Even though A-band is observed by CL, no dislocation is observed by CTEM. Point defect type and level are shown to substantially change with respect to the substrate type as well as the boron doping levels that vary within an order of magnitude. H3 present in the epilayer grown on HPHT type of substrate is replaced by T1 and NE3 point defects for epilayers grown on the CVD type one. An increase of excitonic transitions through LO phonons is also shown to take place near the surface while only TO ones are detected deeper in the epilayer. Such results highlight the importance of choosing the correct substrate.5 page

Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models

Diamond surface properties show a strong dependence on its chemical termination. Hydrogen-terminated and oxygen-terminated diamonds are the most studied terminations with many applications in the electronic and bioelectronic device field. One of the main techniques for the characterization of diamond surface terminations is X-ray photoelectron spectroscopy (XPS). In this sense, the use of angle-resolved XPS (ARXPS) experiments allows obtaining depth-dependent information used here to evidence (100)-O-terminated diamond surface atomic configuration when fabricated by acid treatment. The results were used to compare the chemistry changes occurring during the oxidation process using a sublayer XPS intensity model. The formation of non-diamond carbon phases at the subsurface and higher oxygen contents were shown to result from the oxygenation treatment. A new (100) 1 x 1:O surface reconstruction model is proposed to explain the XPS quantification results of O-terminated diamond

Diamond for Electronics: Materials, Processing and Devices

Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga's figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.The authors thank the Ministerio de Economia y Competitividad (MINECO) of the Spanish Government for funding under Grant Nos. TEC2017-86347-C2-1-R, ESP2017-91820, PID2020-117201RB-C21, and PID2019-110219RB-100 and the Junta de Andalucia (Andalusian Government, Spain) for funding through Nos. P20_00946, FEDER-UCA18- 106470 and FEDER-UCA18-107851 projects

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

Doping diamond layers for electronic applications has become straightforward during the last two decades. However, dislocation generation in diamond during the microwave plasma enhanced chemical vapor deposition growth process is still not fully understood. This is a truly relevant topic to avoid for an optimal performance of any device, but, usually, it is not considered when designing diamond structures for electronic devices. The incorporation of a dopant, here boron, into a lattice as close as that of diamond, can promote the appearance of dislocations in the epilayer. The present contribution analyzes the different processes that can take place in this epilayer and gives some rules to avoid the formation of dislocations, based on the comparison of the different dislocation generation mechanisms. Indeed, competitive mechanisms, such as doping atom proximity effect and lattice strain relaxation, are here quantified for heavily boron-doped diamond epilayers. The resulting growth condition windows for defect-free heavily doped diamond are here deduced, introducing the diamond parameters and its lattice expansion in several previously published critical thickness (h(c)) and critical doping level relationships for different doping levels and growth conditions. Experimental evidence supports the previously discussed thickness-doping-growth condition relationships. Layers with and without dislocations reveal that not only the thickness but also other key factors such as growth orientation and growth parameters are important, as dislocations are shown to be generated in epilayers with a thickness below the People and Bean critical thickness

Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET

Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a (001) Ib nitrogen-doped high pressure high temperature diamond substrate. Taking advantage of the new concept of the non-volatile diamond-based photo switch, it is demonstrated that it is possible to tune the normally-on and normally-off states of the transistor by configuring the pn-junction space charge region. The devices under study was designed following an interdigital-like and a circular-like architectures presenting low threshold voltages (between 3 V and −3 V), an on/off ratio of 107 and a critical electric field numerically assessed of 9 MV.cm−1 at room temperature. This new degree of freedom opens the route for diamond based power electronics.8 página

TEM study of the AlN grain orientation grown on NCD diamond substrate

Piezoelectric AlN layer grain orientation, grown by room temperature reactive sputtering, is analyzed by transmission electron microscopy (TEM).Two types of samples are studied: (i) AlN grown on well-polished NCD (nano-crystalline diamond) diamond, (ii) AlN grown on an up-side down NCD layer previously grown on a Si substrate, i.e. diamond surface as smooth as that of Si substrates. The second set of sample show a faster lignment of their AlN grain caxis attributed to it smoother diamond free surface. No grain orientation relationship between diamond substrate grain and the AlN ones is evidenced, which seems to indicate the preponderance role of the surface substrate state

Diseño para el consumo cultural, la innovación y la inclusión social

Esta obra presenta diversos trabajos de investigación que tienen en común propuestas de diseño desde la cultura, la inclusión y la innovación social, desarrolladas por investigadores nacionales e internacionales adscritos a diversas universidades, así como a programas de posgrado

The evolution of the ventilatory ratio is a prognostic factor in mechanically ventilated COVID-19 ARDS patients

Background: Mortality due to COVID-19 is high, especially in patients requiring mechanical ventilation. The purpose of the study is to investigate associations between mortality and variables measured during the first three days of mechanical ventilation in patients with COVID-19 intubated at ICU admission. Methods: Multicenter, observational, cohort study includes consecutive patients with COVID-19 admitted to 44 Spanish ICUs between February 25 and July 31, 2020, who required intubation at ICU admission and mechanical ventilation for more than three days. We collected demographic and clinical data prior to admission; information about clinical evolution at days 1 and 3 of mechanical ventilation; and outcomes. Results: Of the 2,095 patients with COVID-19 admitted to the ICU, 1,118 (53.3%) were intubated at day 1 and remained under mechanical ventilation at day three. From days 1 to 3, PaO2/FiO2 increased from 115.6 [80.0-171.2] to 180.0 [135.4-227.9] mmHg and the ventilatory ratio from 1.73 [1.33-2.25] to 1.96 [1.61-2.40]. In-hospital mortality was 38.7%. A higher increase between ICU admission and day 3 in the ventilatory ratio (OR 1.04 [CI 1.01-1.07], p = 0.030) and creatinine levels (OR 1.05 [CI 1.01-1.09], p = 0.005) and a lower increase in platelet counts (OR 0.96 [CI 0.93-1.00], p = 0.037) were independently associated with a higher risk of death. No association between mortality and the PaO2/FiO2 variation was observed (OR 0.99 [CI 0.95 to 1.02], p = 0.47). Conclusions: Higher ventilatory ratio and its increase at day 3 is associated with mortality in patients with COVID-19 receiving mechanical ventilation at ICU admission. No association was found in the PaO2/FiO2 variation

Diseño estratégico de vanguardia

La integración del diseño con la vanguardia se observa natural, esto es, el diseño es una disciplina abductiva y la vanguardia persigue fines prospectivos, es decir, en ambos casos se trata de objetivos de posibilidad futura. De tal suerte, este libro, emanado de una parte de las ponencias rigurosamente arbitradas del Coloquio Internacional de Diseño 2016, está dividido en tres secciones o capítulos, a saber, el capítulo uno relacionado con la teoría y metodología para proyectos de diseño de vanguardia, el segundo sobre la tecnología, la innovación y la sostenibilidad de vanguardia de dichos proyectos, y finalmente el último capítulo, vinculado con la gestión estratégica de proyectos de vanguardia.La historia se forja de hechos e interpretaciones, de pasados construidos y de presentes en procesos constantes, estudiados en forma estricta por las ciencias. Por su parte, el futuro ostenta la posibilidad de ser indefinidamente planeado con base en las variopintas aproximaciones teóricas y empíricas que dan fundamento a este tipo de ciencia; éstas son denominadas prospectivas y sus bases vanguardias. Resulta importante señalar, que estas posibilidades sólo permiten tener una idea hipotética de lo que será la realidad y el mundo de vida de los seres vivos y su contexto, no obstante, se trata de la única manera racional que tiene el ser humano de prever ese futuro posible. Las distintas ciencias y disciplinas nos permiten construir históricamente estas posibilidades partiendo de datos, hechos, significados y un sinfín de informaciones que le dan cuerpo y sentido a tales posibilidades. En este sentido, la vanguardia, como base del conocimiento prospectivo, observa la necesidad de ser escrita, leída y discutida en los términos más estrictos con el fin de volver las predicciones más precisas. El diseño por su parte, es definido de manera sucinta como la disciplina proyectual estratégica y sistémica de la posibilidad, dirigida a procesos de significación utilitaria y simbólica para la comprensión –o interpretación– y modificación –o proyectación– de niveles de realidad (referentes y sujetos) desde diversos aparatos teóricos y empíricos –perspectivas disciplinarias–

Treatment with tocilizumab or corticosteroids for COVID-19 patients with hyperinflammatory state: a multicentre cohort study (SAM-COVID-19)

Objectives: The objective of this study was to estimate the association between tocilizumab or corticosteroids and the risk of intubation or death in patients with coronavirus disease 19 (COVID-19) with a hyperinflammatory state according to clinical and laboratory parameters. Methods: A cohort study was performed in 60 Spanish hospitals including 778 patients with COVID-19 and clinical and laboratory data indicative of a hyperinflammatory state. Treatment was mainly with tocilizumab, an intermediate-high dose of corticosteroids (IHDC), a pulse dose of corticosteroids (PDC), combination therapy, or no treatment. Primary outcome was intubation or death; follow-up was 21 days. Propensity score-adjusted estimations using Cox regression (logistic regression if needed) were calculated. Propensity scores were used as confounders, matching variables and for the inverse probability of treatment weights (IPTWs). Results: In all, 88, 117, 78 and 151 patients treated with tocilizumab, IHDC, PDC, and combination therapy, respectively, were compared with 344 untreated patients. The primary endpoint occurred in 10 (11.4%), 27 (23.1%), 12 (15.4%), 40 (25.6%) and 69 (21.1%), respectively. The IPTW-based hazard ratios (odds ratio for combination therapy) for the primary endpoint were 0.32 (95%CI 0.22-0.47; p < 0.001) for tocilizumab, 0.82 (0.71-1.30; p 0.82) for IHDC, 0.61 (0.43-0.86; p 0.006) for PDC, and 1.17 (0.86-1.58; p 0.30) for combination therapy. Other applications of the propensity score provided similar results, but were not significant for PDC. Tocilizumab was also associated with lower hazard of death alone in IPTW analysis (0.07; 0.02-0.17; p < 0.001). Conclusions: Tocilizumab might be useful in COVID-19 patients with a hyperinflammatory state and should be prioritized for randomized trials in this situatio