Automated wavelength recovery for silicon photonics

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.Cataloged from PDF version of thesis.Includes bibliographical references.In 2020, 1Tb/s on-/off-chip communication bandwidth and ~100fJ/bit total energy in a point to point link is predicted by Moore's law for high performance computing applications. These requirements are pushing the limits of on-chip silicon CMOS transistors and off-chip VCSELs technology. The major limitation of the current systems is the lack of ability to enable more than a single channel on a single wire/fiber. Silicon photonics, offering a solution on the same platform with CMOS technology, can enable Wavelength Division Multiplexed (WDM) systems. However, Silicon photonics has to overcome the wafer level, fabrication variations and dynamic temperature fluctuations, induced by processor cores with low-energy high-speed resonators. In this work, we offer a solution, called as Automated Wavelength Recovery (AWR), to these limitations. In order to demonstrate AWR, we design and demonstrate high performance active silicon resonators. A microdisk modulator achieved open eye-diagrams at a data rate of 25Gb/s and error-free operation up to 20Gb/s. A thermo-optically tunable microdisk modulator with Low power modulation (1 If/bit) at a data rate of 13-Gb/s, a 5.8-dB extinction ratio, a 1.22-dB insertion loss and a record-low thermal tuning (4.9-[mu].W/GHz) of a high-speed modulator is achieved. We demonstrated a new L-shaped resonant microring (LRM) modulator that achieves 30 Gb/s error-free operation in a compact (< 20 [mu]m²) structure while maintaining single-mode operation, enabling direct WDM across an uncorrupted 5.3 THz FSR. We have introduced heater elements inside a new single mode filter, a LRM filter, successfully. The LRM filter achieved high-efficiency (3.3[mu]W/GHz) and high-speed ([tau]f ~1.6 [mu]s) thermal tuning and maintained signal integrity with record low thru to drop power penalty (<1.1 dB) over the 4 THz FSR and <0.5dB insertion loss. We have integrated a heater driver and adiabatic resonant microring (ARM) filter in a commercial bulk CMOS deep-trench process for the first time. The proposed AWR algorithm is implemented with an ARM multiplexer. An advanced method for AWR is also introduced and demonstrated with passive resonators.by Erman Timurdogan.S.M

A one femtojoule athermal silicon modulator

Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength division multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters, and detectors) consume too much power for the femtojouleclass links that will ultimately be required. Here, we propose, demonstrate, and characterize the first modulator to achieve simultaneous high-speed (25-Gb/s), low voltage (0.5VPP) and efficient 1-fJ/bit error-free operation while maintaining athermal operation. Both the low energy and athermal operation were enabled by a record free-carrier accumulation/depletion response obtained in a vertical p-n junction device that at 250-pm/V (30-GHz/V) is up to ten times larger than prior demonstrations. Over a 7.5{\deg}C temperature range, the massive electro-optic response was used to compensate for thermal drift without increasing energy consumption and over a 10{\deg}C temperature range, increasing energy consumption by only 2-fJ/bit. The results represent a new paradigm in modulator development, one where thermal compensation is achieved electro-optically.Comment: 23 pages, 5 figure

Enhanced photoelectric and photothermal responses on silicon platform by plasmonic absorber and omni-schottky junction

Recent progresses in plasmon-induced hot electrons open up the possibility to achieve photon harvesting beyond the fundamental limit imposed by band-to-band transitions in semiconductors. To obtain high efficiency, both the optical absorption and electron emission/collection are crucial factors that need to be addressed in the design of hot electron devices. Here, we demonstrate a photoresponse as high as 3.3mA/W at 1500nm on a silicon platform by plasmonic absorber (PA) and omni-Schottky junction integrated photodetector, reverse biased at 5V and illuminated with 10mW. The PA fabricated on silicon consists of a monolayer of random Au nanoparticles (NPs), a wide-band gap semiconductor (TiO2) and an optically thick Au electrode, resulting in broadband near-infrared (NIR) absorption and efficient hot-electron transfer via an all-around Schottky emission path. Meanwhile, time and spectral-resolved photoresponse measurements reveal that embedded NPs with superior absorption resembling plasmonic local heating sources can transfer their energy to electricity via the photothermal mechanism, which until now has not been adequately assessed or rigorously differentiated from the photoelectric process in plasmon-mediated photon harvesting nano-systems

Broadband 10 Gb/s operation of graphene electro-absorption modulator on silicon

High performance integrated optical modulators are highly desired for future optical interconnects. The ultrahigh bandwidth and broadband operation potentially offered by graphene based electro-absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro-absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 mu m-length hybrid graphene-Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best-in-class Si (Ge) modulators for future chip-level optical interconnects

Parallel-Coupled Adiabatic Resonant Microring (ARM) Filter with Integrated Heaters

Abstract: Add-drop filters based on parallel adiabatic resonant microrings (ARMs) are demonstrated. The ARM design permits synthesis of maximally flat characteristics up to a FWHM of 54 GHz while keeping the ripple amplitude below 1 dB

Enhancing Pockels effect in strained silicon waveguides

© 2019 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited"[EN] The magnitude and origin of the electro-optic measurements in strained silicon devices has been lately the object of a great controversy. Furthermore, recent works underline the importance of the masking effect of free carriers in strained waveguides and the low interaction between the mode and the highly strained areas. In the present work, the use of a p-i-n junction and an asymmetric cladding is proposed to eliminate the unwanted carrier influence and improve the electro-optical modulation response. The proposed configuration enhances the effective refractive index due to the strain-induced Pockels effect in more than two orders of magnitude with respect to the usual configuration. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing AgreementMinisterio de Economía y Competitividad (MINECO/FEDER, UE) (TEC2016-76849); Universitat Politècnica de València (FPI-Irene Olivares); Ministerio de Educación, Cultura y Deporte (FPU17/04224); Generalitat Valenciana. Irene Olivares and Jorge Parra acknowledges the Universitat Politècnica de València and Generalitat Valenciana, respectively, for funding their research staff training (FPI) grant.Olivares-Sánchez-Mellado, I.; Parra Gómez, J.; Brimont, ACJ.; Sanchis Kilders, P. (2019). Enhancing Pockels effect in strained silicon waveguides. Optics Express. 27(19):26882-26892. https://doi.org/10.1364/OE.27.026882S26882268922719Komljenovic, T., Huang, D., Pintus, P., Tran, M. A., Davenport, M. L., & Bowers, J. E. (2018). Photonic Integrated Circuits Using Heterogeneous Integration on Silicon. 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Programmable dispersion on a photonic integrated circuit for classical and quantum applications

We demonstrate a large-scale tunable-coupling ring resonator array, suitable for high-dimensional classical and quantum transforms, in a CMOS-compatible silicon photonics platform. The device consists of a waveguide coupled to 15 ring-based dispersive elements with programmable linewidths and resonance frequencies. The ability to control both quality factor and frequency of each ring provides an unprecedented 30 degrees of freedom in dispersion control on a single spatial channel. This programmable dispersion control system has a range of applications, including mode-locked lasers, quantum key distribution, and photon-pair generation. We also propose a novel application enabled by this circuit – high-speed quantum communications using temporal-mode-based quantum data locking – and discuss the utility of the system for performing the high-dimensional unitary optical transformations necessary for a quantum data locking demonstration

Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy

We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic modulator operating with only a 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz speeds, which are the lowest values ever reported for a silicon electro-optic modulator. A 3 dB extinction ratio is demonstrated with an ultra-low 50 mV swing voltage with a total device energy consumption of 42.8 fJ/bit, which is dominated by the state holding energy. The total energy consumption is reduced to 14.65 fJ/bit for a 300 mV swing voltage while still keeping the switching energy at less than 2 fJ/bit. Under optimum voltage conditions, the device operates with a maximum speed of 3 Gbps with 8 dB extinction ratio, which rises to 11 dB for a 1 Gbps modulation speed

Broadband THz absorption spectrometer based on excitonic nonlinear optical effects

A broadly tunable THz source is realized via difference frequency generation, in which an enhancement to χ (3) that is obtained via resonant excitation of III–V semiconductor quantum well excitons is utilized. The symmetry of the quantum wells (QWs) is broken by utilizing the built-in electric-field across a p–i–n junction to produce effective χ (2) processes, which are derived from the high χ (3) . This χ (2) media exhibits an onset of nonlinear processes at ~4 W cm −2 , thereby enabling area (and, hence, power) scaling of the THz emitter. Phase matching is realized laterally through normal incidence excitation. Using two collimated 130 mW continuous wave (CW) semiconductor lasers with ~1-mm beam diameters, we realize monochromatic THz emission that is tunable from 0.75 to 3 THz and demonstrate the possibility that this may span 0.2–6 THz with linewidths of ~20 GHz and efficiencies of ~1 × 10 –5 , thereby realizing ~800 nW of THz power. Then, transmission spectroscopy of atmospheric features is demonstrated, thereby opening the way for compact, low-cost, swept-wavelength THz spectroscopy