Ag-Decorated Fe 3

Well-dispersed Ag nanoparticles (NPs) are successfully decorated on Fe3O4@SiO2 nanorods (NRs) via a facile step-by-step strategy. This method involves coating α-Fe2O3 NRs with uniform silica layer, reduction in 10% H2/Ar atmosphere at 450°C to obtain Fe3O4@SiO2 NRs, and then depositing Ag NPs on the surface of Fe3O4@SiO2 NRs through a sonochemical step. It was found that the as-prepared Ag-decorated magnetic Fe3O4@SiO2 NRs (Ag-MNRs) exhibited a higher catalytic efficiency than bare Ag NPs in the degradation of organic dye and could be easily recovered by convenient magnetic separation, which show great application potential for environmental protection applications

Synthesis, chemical ordering, and magnetic properties of FePtCu nanoparticle films

©2003 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?JAPIAU/93/7337/1DOI:10.1063/1.1543863FePtCu nanoparticles with varying composition were prepared by the simultaneous polyol reduction of platinum acetylacetonate and copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate) and the thermal decomposition of iron pentacarbonyl. As prepared the particles had a fcc structure with an average diameter of 3.5 nm and were superparamagnetic. Heat treatment of the self-assembled films at temperatures above 550 °C transformed the particles from the fcc to the L1₀ phase, give in-plane coercivities as high as 9000 Oe. X-ray diffraction revealed that the Cu remained in the films and the presence of an extra peak, indicating a second phase was present. Consistent with two or more phases, the magnetic hysteresis curves could be decomposed into a hard component (H[subscript c]c>5000 Oe) and a soft component (H[subscript c]c<2000 Oe). Unlike our earlier results for Ag in FePt, adding Cu to FePt did not lower the temperature required for phase transformation from the fcc to the L1₀ phase

The anomalous Hall effect controlled by residual epitaxial strain in antiferromagnetic Weyl semimetal Mn3Sn thin films grown by molecular beam epitaxy

The large anomalous Hall effect (AHE) in antiferromagnetic(AFM) Weyl semimetal Mn3Sn attracts intensive attentions in spintronics. Here, we report the structural property of high quality Mn3Sn thin film on insulator substrate MgO(110) by molecular beam epitaxy (MBE), and AHE in control of residual mismatch strain between Mn3Sn film and substrate. We are able to grow strain-free Mn3Sn(10 1¯ 0) films or alternatively strained Mn3Sn(11 2¯ 0) films via a three-step process. The strain-free Mn3Sn film has large anomalous Hall conductivity up to 30 Ω-1cm−1 at room temperature, which is comparable to bulk Mn3Sn. In contrast, AHE is switched off in strained Mn3Sn film due to piezomagnetic effect under a uniaxial compress strain of ∼2.0%. These findings provide a deeper understanding on AFM spintronic applications

Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetizatio