Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, sg, extracted from experimentally measured transition frequencies, xm, using physics based a.c. simulations, demonstrated a reduction in sg with increasing epitaxial doping concentration. The frequency scaled conductance, G/x, in strong inversion allowed the estimation of accurate Cox values for these MOS devices

VectorBase: improvements to a bioinformatics resource for invertebrate vector genomics.

VectorBase (http://www.vectorbase.org) is a NIAID-supported bioinformatics resource for invertebrate vectors of human pathogens. It hosts data for nine genomes: mosquitoes (three Anopheles gambiae genomes, Aedes aegypti and Culex quinquefasciatus), tick (Ixodes scapularis), body louse (Pediculus humanus), kissing bug (Rhodnius prolixus) and tsetse fly (Glossina morsitans). Hosted data range from genomic features and expression data to population genetics and ontologies. We describe improvements and integration of new data that expand our taxonomic coverage. Releases are bi-monthly and include the delivery of preliminary data for emerging genomes. Frequent updates of the genome browser provide VectorBase users with increasing options for visualizing their own high-throughput data. One major development is a new population biology resource for storing genomic variations, insecticide resistance data and their associated metadata. It takes advantage of improved ontologies and controlled vocabularies. Combined, these new features ensure timely release of multiple types of data in the public domain while helping overcome the bottlenecks of bioinformatics and annotation by engaging with our user community

Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

In this work, we investigated the effect of forming gas annealing (FGA, 5% H2/95% N2, 250 °C to 450 °C) on border trap density in high-k/InGaAs metal-oxide-semiconductor (MOS) systems using accumulation frequency dispersion and capacitance-voltage (CV) hysteresis analysis. It is demonstrated that the optimum FGA temperature that reduces the accumulation frequency dispersion is 350 °C for HfO2/n-InGaAs and 450 °C for Al2O3/n-InGaAs MOS system. Volume density of border traps (Nbt) is estimated using the accumulation frequency dispersion based on a distributed model for border traps. It is shown that for HfO2/n-InGaAs MOS system, Nbt is reduced from 9.4 × 1019 cm− 3 eV− 1 before FGA to 6.3 × 1019 cm− 3 eV− 1 following FGA at 350 °C. For the case of Al2O3/n-InGaAs MOS system, Nbt is reduced from 5.7 × 1019 cm− 3 eV− 1 for no FGA to 3.4 × 1019 cm− 3 eV− 1 for FGA at 450 °C. Furthermore, it is shown that the most pronounced reduction in border trap density estimated from CV hysteresis analysis is observed at the same optimum FGA temperature that reduces the accumulation frequency dispersion, indicating that these two techniques for border trap analysis are correlated

Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors

This work looks at the effect on mid-gap interface state defect density estimates for In0.53Ga0.47As semiconductor capacitors when different AC voltage amplitudes are selected for a fixed voltage bias step size (100 mV) during room temperature only electrical characterization. Results are presented for Au/Ni/Al2O3/In0.53Ga0.47As/InP metal–oxide–semiconductor capacitors with (1) n-type and p-type semiconductors, (2) different Al2O3 thicknesses, (3) different In0.53Ga0.47As surface passivation concentrations of ammonium sulphide, and (4) different transfer times to the atomic layer deposition chamber after passivation treatment on the semiconductor surface—thereby demonstrating a cross-section of device characteristics. The authors set out to determine the importance of the AC voltage amplitude selection on the interface state defect density extractions and whether this selection has a combined effect with the oxide capacitance. These capacitors are prototypical of the type of gate oxide material stacks that could form equivalent metal–oxide–semiconductor field-effect transistors beyond the 32 nm technology node. The authors do not attempt to achieve the best scaled equivalent oxide thickness in this work, as our focus is on accurately extracting device properties that will allow the investigation and reduction of interface state defect densities at the high-k/III–V semiconductor interface. The operating voltage for future devices will be reduced, potentially leading to an associated reduction in the AC voltage amplitude, which will force a decrease in the signal-to-noise ratio of electrical responses and could therefore result in less accurate impedance measurements. A concern thus arises regarding the accuracy of the electrical property extractions using such impedance measurements for future devices, particularly in relation to the mid-gap interface state defect density estimated from the conductance method and from the combined high–low frequency capacitance–voltage method. The authors apply a fixed voltage step of 100 mV for all voltage sweep measurements at each AC frequency. Each of these measurements is repeated 15 times for the equidistant AC voltage amplitudes between 10 mV and 150 mV. This provides the desired AC voltage amplitude to step size ratios from 1:10 to 3:2. Our results indicate that, although the selection of the oxide capacitance is important both to the success and accuracy of the extraction method, the mid-gap interface state defect density extractions are not overly sensitive to the AC voltage amplitude employed regardless of what oxide capacitance is used in the extractions, particularly in the range from 50% below the voltage sweep step size to 50% above it. Therefore, the use of larger AC voltage amplitudes in this range to achieve a better signal-to-noise ratio during impedance measurements for future low operating voltage devices will not distort the extracted interface state defect density

Does bright light have an anxiolytic effect? - an open trial

<p>Abstract</p> <p>Background</p> <p>The aim of this open trial was to examine the influence of acute bright light exposure on anxiety in older and young adults.</p> <p>Methods</p> <p>This study was ancillary to a complex 5-day laboratory experiment testing phase-responses to light at all times of the day. On 3 consecutive days, participants were exposed to bright light (3,000 lux) for 3 hours. The Spielberger State-Trait Anxiety Inventory (Form Y1) was administered 5 minutes before and 20 minutes after each treatment. Mean state anxiety before and after treatment were analyzed by age, sex, and time ANOVA. To avoid floor effects, only participants with baseline STAI levels of ≥ 25 were included.</p> <p>Results</p> <p>A significant anxiolytic effect of bright light was found for the mean data, as well as for each of the three days. No significant main effect of age, sex, or interaction of these factors with STAI change were found.</p> <p>Conclusion</p> <p>The results show consistent and significant (albeit modest) anxiolytic effects following acute bright light exposure in low anxiety adults. Further randomized, controlled trials in clinically anxious individuals are needed.</p

Extreme radio flares and associated X-ray variability from young stellar objects in the Orion Nebula Cluster

Jan Forbrich, et al, ‘Extreme Radio Flares and Associated XRay Variability from Young Stellar Objects in the Orion Nebula Cluster’, The Astrophysical Journal, Vol. 844 (2), July 2017. DOI: https://doi.org/10.3847/1538-4357/aa7aa4. © 2017 The American Astronomical Society. All Rights Reserved.Young stellar objects are known to exhibit strong radio variability on timescales of weeks to months, and a few reports have documented extreme radio flares with at least an order of magnitude change in flux density on timescales of hours to days. However, there have been few constraints on the occurrence rate of such radio flares or on the correlation with pre-main sequence X-ray flares, although such correlations are known for the Sun and nearby active stars. Here we report simultaneous deep VLA radio and Chandra X-ray observations of the Orion Nebula Cluster, targeting hundreds of sources to look for the occurrence rate of extreme radio variability and potential correlation with the most extreme X-ray variability. We identify 13 radio sources with extreme radio variability, with some showing an order of magnitude change in flux density in less than 30 minutes. All of these sources show X-ray emission and variability, but we find clear correlations with extreme radio flaring only on timescales <1 hr. Strong X-ray variability does not predict the extreme radio sources and vice versa. Radio flares thus provide us with a new perspective on high-energy processes in YSOs and the irradiation of their protoplanetary disks. Finally, our results highlight implications for interferometric imaging of sources violating the constant-sky assumption.Peer reviewedFinal Published versio

Specialization along the Left Superior Temporal Sulcus for Auditory Categorization

The affinity and temporal course of functional fields in middle and posterior superior temporal cortex for the categorization of complex sounds was examined using functional magnetic resonance imaging (fMRI) and event-related potentials (ERPs) recorded simultaneously. Data were compared before and after subjects were trained to categorize a continuum of unfamiliar nonphonemic auditory patterns with speech-like properties (NP) and a continuum of familiar phonemic patterns (P). fMRI activation for NP increased after training in left posterior superior temporal sulcus (pSTS). The ERP P2 response to NP also increased with training, and its scalp topography was consistent with left posterior superior temporal generators. In contrast, the left middle superior temporal sulcus (mSTS) showed fMRI activation only for P, and this response was not affected by training. The P2 response to P was also independent of training, and its estimated source was more anterior in left superior temporal cortex. Results are consistent with a role for left pSTS in short-term representation of relevant sound features that provide the basis for identifying newly acquired sound categories. Categorization of highly familiar phonemic patterns is mediated by long-term representations in left mSTS. Results provide new insight regarding the function of ventral and dorsal auditory streams