Mechanisms for conduction via low-frequency noise measurements of High-Tc Thin-film microbridges

We have investigated possible mechanisms for conduction in high-T/sub c/ thin-film microbridges biased into the voltage state via the low-frequency noise properties. Measurements on thinned YBCO microbridges indicate that the voltage noise power spectral density S/sub V/(f) is proportional to the DC voltage.Peer Reviewe

Flux flow of Abrikosov-Josephson vortices along grain boundaries in high-temperature superconductors

We show that low-angle grain boundaries (GB) in high-temperature superconductors exhibit intermediate Abrikosov vortices with Josephson cores, whose length $l$ along GB is smaller that the London penetration depth, but larger than the coherence length. We found an exact solution for a periodic vortex structure moving along GB in a magnetic field $H$ and calculated the flux flow resistivity $R_F(H)$, and the nonlinear voltage-current characteristics. The predicted $R_F(H)$ dependence describes well our experimental data on $7^{\circ}$ unirradiated and irradiated $YBa_2Cu_3O_7$ bicrystals, from which the core size $l(T)$, and the intrinsic depairing density $J_b(T)$ on nanoscales of few GB dislocations were measured for the first time. The observed temperature dependence of $J_b(T)=J_{b0}(1-T/T_c)^2$ indicates a significant order parameter suppression in current channels between GB dislocation cores.Comment: 5 pages 5 figures. Phys. Rev. Lett. (accepted

Magnetic field sensitivity of variable thickness microbridges in tbcco, bscco and ybco.

We describe results of a study comparing the magnetic field sensitivities of variable thickness bridge (VTB) arrays fabricated in TBCCO, BSCCO, and YBCO thin films. Identical structures were patterned in a variety of films, and the bridges were thinned by four different methods. Analysis of the data yields experimental evidence as to the suitability of these types of films for devices such as the superconducting flux flow transistor (SFFT) which is based on this geometry. The volt-ampere characteristics of the arrays were measured in low uniform magnetic fields (⩽130 G) and in nonuniform fields (⩽5 G) produced by a nearby control line. For these films in this geometry, no measurable effect of the control line magnetic field was observed. Large values of transresistance and current gain could only be attained through a thermal mechanism when the control line was driven normal. Upper bounds for (magnetically generated) transresistance (⩽5 mΩ) and current gains (⩽0.005) have been inferred from the uniform field data assuming a standard best-case device geometry. All volt-ampere curves followed closely a power law relationship (V~I n), with exponent n ~1.2-10. We suggest materials considerations that may yield improved device performancePeer Reviewe

Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities

Microcavities based on group-III nitride material offer a notable platform for the investigation of light-matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and low-threshold nanolasers. Disk or tube geometries in particular are attractive for low-threshold lasing applications due to their ability to support high finesse whispering gallery modes (WGMs) and small modal volumes. In this article we present the fabrication of homogenous and dense arrays of axial InGaN/GaN nanotubes via a combination of displacement Talbot lithography (DTL) for patterning and inductively coupled plasma top-down dry-etching. Optical characterization highlights the homogeneous emission from nanotube structures. Power-dependent continuous excitation reveals a non-uniform light distribution within a single nanotube, with vertical confinement between the bottom and top facets, and radial confinement within the active region. Finite-difference time-domain simulations, taking into account the particular shape of the outer diameter, indicate that the cavity mode of a single nanotube has a mixed WGM-vertical Fabry-Perot mode (FPM) nature. Additional simulations demonstrate that the improvement of the shape symmetry and dimensions primarily influence the Q-factor of the WGMs whereas the position of the active region impacts the coupling efficiency with one or a family of vertical FPMs. These results show that regular arrays of axial InGaN/GaN nanotubes can be achieved via a low-cost, fast and large-scale process based on DTL and top-down etching. These techniques open a new perspective for cost effective fabrication of nano-LED and nano-laser structures along with bio-chemical sensing applications

High-field superconductivity in alloyed MgB2 thin films

We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{\perp}(4.2) \simeq 35T$ and $H_{c2}\|(4.2) \simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}\|(0)$ approaches the paramagnetic limit of $\sim 70T$

Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures

In this study we report in-plane nanotracks produced by molecular-beam-epitaxy (MBE) exhibiting lateral self-assembly and unusual periodic and out-of-phase height variations across their growth axes. The nanotracks are synthesized using bismuth segregation on the GaAsBi epitaxial surface, which results in metallic liquid droplets capable of catalyzing GaAsBi nanotrack growth via the vapor–liquid–solid (VLS) mechanism. A detailed examination of the nanotrack morphologies is carried out employing a combination of scanning electron and atomic force microscopy and, based on the findings, a geometric model of nanotrack growth during MBE is developed. Our results indicate diffusion and shadowing effects play significant roles in defining the interesting nanotrack shape. The unique periodicity of our lateral nanotracks originates from a rotating nucleation “hot spot” at the edge of the liquid–solid interface, a feature caused by the relative periodic circling of the non-normal ion beam flux incident on the sample surface, inside the MBE chamber. We point out that such a concept is divergent from current models of crawling mode growth kinetics and conclude that these effects may be utilized in the design and assembly of planar nanostructures with controlled non-monotonous structure

Mechanisms for conduction via low-frequency noise measurements of High-Tc Thin-film microbridges

We have investigated possible mechanisms for conduction in high-T/sub c/ thin-film microbridges biased into the voltage state via the low-frequency noise properties. Measurements on thinned YBCO microbridges indicate that the voltage noise power spectral density S/sub V/(f) is proportional to the DC voltage.Peer Reviewe

Mechanisms for conduction via low-frequency noise measurements of High-Tc Thin-film microbridges

We have investigated possible mechanisms for conduction in high-T/sub c/ thin-film microbridges biased into the voltage state via the low-frequency noise properties. Measurements on thinned YBCO microbridges indicate that the voltage noise power spectral density S/sub V/(f) is proportional to the DC voltage.Peer Reviewe

Locally defined quantum emission from epitaxial few-layer tungsten diselenide

Recently, single photons have been observed emanating from point defects in two-dimensional (2D) materials including WSe2, WS2, hexagonal-BN, and GaSe, with their energy residing in the direct electronic bandgap. Here, we report single photon emission from a nominal weakly emitting indirect bandgap 2D material through deterministic strain induced localization. A method is demonstrated to create highly spatially localized and spectrally well-separated defect emission sites in the 750-800nm regime in a continuous epitaxial film of few-layer WSe2 synthesized by a multistep diffusion-mediated gas source chemical vapor deposition technique. To separate the effects of mechanical strain from the substrate or dielectric-environment induced changes in the electronic structure, we created arrays of large isotropically etched ultrasharp silicon dioxide tips with spatial dimensions on the order of 10 mu m. We use bending based on the small radius of these tips-on the order of 4nm-to impart electronic localization effects through morphology alone, as the WSe2 film experiences a uniform SiO2 dielectric environment in the device geometry chosen for this investigation. When the continuous WSe2 film was transferred onto an array of SiO2 tips, an similar to 87% yield of localized emission sites on the tips was observed. The outcomes of this report provide fundamental guidelines for the integration of beyond-lab-scale quantum materials into photonic device architectures for all-optical quantum information applications.U. S. National Science Foundation [CAREER-1553987, REU-1560098]; FEI Company Graduate Fellowship [2018AU0058]; Laboratory Directed Research and Development Program of Los Alamos National Laboratory [20190516ECR]; Los Alamos National Laboratory; U. S. Department of Energy's NNSA [89233218CNA000001, 2DCC-MIP]; NSF [DMR-1539916]; Air Force Office of Scientific Research [FA9550-15RYCOR159]Open access articleThis item from the UA Faculty Publications collection is made available by the University of Arizona with support from the University of Arizona Libraries. If you have questions, please contact us at [email protected]