Radiative Lifetime of Excitons in Carbon Nanotubes

We calculate the radiative lifetime and energy bandstructure of excitons in semiconducting carbon nanotubes, within a tight-binding approach. In the limit of rapid interband thermalization, the radiative decay rate is maximized at intermediate temperatures, decreasing at low temperature because the lowest-energy excitons are optically forbidden. The intrinsic phonons cannot scatter excitons between optically active and forbidden bands, so sample-dependent extrinsic effects that break the symmetries can play a central role. We calculate the diameter-dependent energy splittings between singlet and triplet excitons of different symmetries, and the resulting dependence of radiative lifetime on temperature and tube diameter.Comment: 4 pages, 3 figure

Mobility in semiconducting carbon nanotubes at finite carrier density

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for different tube diameters and temperature. The low-field mobility is a non-monotonic function of carrier density, and varies by as much as a factor of 4 at room temperature. At low density, with increasing field the drift velocity reaches a maximum and then exhibits negative differential mobility, due to the non-parabolicity of the bandstructure. At a critical density $\rho_c\sim$ 0.35-0.5 electrons/nm, the drift velocity saturates at around one third of the Fermi velocity. Above $\rho_c$, the velocity increases with field strength with no apparent saturation.Comment: 5 pages, 4 figure

Drain Voltage Scaling in Carbon Nanotube Transistors

While decreasing the oxide thickness in carbon nanotube field-effect transistors (CNFETs) improves the turn-on behavior, we demonstrate that this also requires scaling the range of the drain voltage. This scaling is needed to avoid an exponential increase in Off-current with drain voltage, due to modulation of the Schottky barriers at both the source and drain contact. We illustrate this with results for bottom-gated ambipolar CNFETs with oxides of 2 and 5 nm, and give an explicit scaling rule for the drain voltage. Above the drain voltage limit, the Off-current becomes large and has equal electron and hole contributions. This allows the recently reported light emission from appropriately biased CNFETs.Comment: 4 pages, 4 EPS figure, to appear in Appl. Phys. Lett. (issue of 15 Sept 2003

Stable unidimensional arrays of coherent strained islands

We investigate the equilibrium properties of arrays of coherent strained islands in heteroepitaxial thin films of bidimensional materials. The model we use takes into account only three essential ingredients : surface energies, elastic energies of the film and of the substrate and interaction energies between islands via the substrate. Using numerical simulations for a simple Lennard-Jones solid, we can assess the validity of the analytical expressions used to describe each of these contributions. A simple analytical expression is obtained for the total energy of the system. Minimizing this energy, we show that arrays of coherent islands can exist as stable configurations. Even in this simple approach, the quantitative results turn out to be very sensitive to some details of the surface energy.Comment: 24 pages, 7 figures. to be published in Surface Scienc

Valence Force Model for Phonons in Graphene and Carbon Nanotubes

Many calculations require a simple classical model for the interactions between sp^2-bonded carbon atoms, as in graphene or carbon nanotubes. Here we present a new valence force model to describe these interactions. The calculated phonon spectrum of graphene and the nanotube breathing-mode energy agree well with experimental measurements and with ab initio calculations. The model does not assume an underlying lattice, so it can also be directly applied to distorted structures. The characteristics and limitations of the model are discussed.Comment: 4 pages, 3 figure

Device modeling of long-channel nanotube electro-optical emitter

We present a simple analytic model of nanotube electro-optical emitters, along with improved experimental measurements using PMMA-passivated devices with reduced hysteresis. Both the ambipolar electrical characteristics and the motion of the infrared-emission spot are well described. The model indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides

Efficient and reliable method for the simulation of scanning tunneling images and spectra with local basis sets

Based on Bardeen's perturbative approach to tunneling, we have found an expression for the current between tip and sample, which can be efficiently coded in order to perform fast ab initio simulations of STM images. Under the observation that the potential between the electrodes should be nearly flat at typical tunnel gaps, we have addressed the difficulty in the computation of the tunneling matrix elements by considering a vacuum region of constant potential delimited by two surfaces (each of them close to tip and sample respectively), then propagating tip and sample wave functions by means of the vacuum Green's function, to finally obtain a closed form in terms of convolutions. The current is then computed for every tip-sample relative position and for every bias voltage in one shot. The electronic structure of tip and sample is calculated at the same footing, within density functional theory, and independently. This allows us to carry out multiple simulations for a given surface with a database of different tips. We have applied this method to the Si(111)-(7x7) and Ge(111)-c(2x8) surfaces. Topographies and spectroscopic data, showing a very good agreement with experiments, are presented.Comment: 10 pages, 11 figure

Fermi-level alignment at metal-carbon nanotube interfaces: application to scanning tunneling spectroscopy

At any metal-carbon nanotube interface there is charge transfer and the induced interfacial field determines the position of the carbon nanotube band structure relative to the metal Fermi-level. In the case of a single-wall carbon nanotube (SWNT) supported on a gold substrate, we show that the charge transfers induce a local electrostatic potential perturbation which gives rise to the observed Fermi-level shift in scanning tunneling spectroscopy (STS) measurements. We also discuss the relevance of this study to recent experiments on carbon nanotube transistors and argue that the Fermi-level alignment will be different for carbon nanotube transistors with low resistance and high resistance contacts.Comment: 4 pages, 3 ps figures, minor corrections, accepted by Phys. Rev. Let