39 research outputs found
Measurement of and charged current inclusive cross sections and their ratio with the T2K off-axis near detector
We report a measurement of cross section and the first measurements of the cross section
and their ratio
at (anti-)neutrino energies below 1.5
GeV. We determine the single momentum bin cross section measurements, averaged
over the T2K -flux, for the detector target material (mainly
Carbon, Oxygen, Hydrogen and Copper) with phase space restricted laboratory
frame kinematics of 500 MeV/c. The
results are and $\sigma(\nu)=\left( 2.41\
\pm0.022{\rm{(stat.)}}\pm0.231{\rm (syst.)}\ \right)\times10^{-39}^{2}R\left(\frac{\sigma(\bar{\nu})}{\sigma(\nu)}\right)=
0.373\pm0.012{\rm (stat.)}\pm0.015{\rm (syst.)}$.Comment: 18 pages, 8 figure
Search for Lorentz and CPT violation using sidereal time dependence of neutrino flavor transitions over a short baseline
A class of extensions of the Standard Model allows Lorentz and CPT violations, which can be identified
by the observation of sidereal modulations in the neutrino interaction rate. A search for such modulations
was performed using the T2K on-axis near detector. Two complementary methods were used in this study,
both of which resulted in no evidence of a signal. Limits on associated Lorentz and CPT-violating terms
from the Standard Model extension have been derived by taking into account their correlations in this
model for the first time. These results imply such symmetry violations are suppressed by a factor of more
than 10 20 at the GeV scale
Measurement of coherent production in low energy neutrino-Carbon scattering
We report the first measurement of the flux-averaged cross section for charged current coherent production on carbon for neutrino energies less than 1.5 GeV to a restricted final state phase space region in the T2K near detector, ND280. Comparisons are made with predictions from the Rein-Sehgal coherent production model and the model by Alvarez-Ruso {\it et al.}, the latter representing the first implementation of an instance of the new class of microscopic coherent models in a neutrino interaction Monte Carlo event generator. This results contradicts the null results reported by K2K and SciBooNE in a similar neutrino energy region
Defect evolution and dopant activation in laser annealed Si and Ge
International audienceDefect evolution and dopant activation are intimately related to the use of ion implantation and an-nealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show that laser anneal favours the formation of "unconventional" (001) loops that, following non-melt anneals, act as carrier scattering centres, leading to carrier mobility degradation. In contrast, in the case of melt anneals, the molten region itself is of excellent crystalline quality, defect-free and with very high activation rates. As for laser annealed Germanium, we studied in detail the amorphous to crystalline Ge phase transition as a function of the increasing LTA energy density and we found that using LTA, very high carrier concentrations (above 10 20 cm À 3) were achieved in As doped regions, which are unachievable with conventional rapid thermal annealing (RTA) processes