First-order restoration of SU(Nf) x SU(Nf) chiral symmetry with large Nf and Electroweak phase transition

It has been argued by Pisarski and Wilczek that finite temperature restoration of the chiral symmetry SU(Nf) x SU(Nf) is first-order for Nf >=3. This type of chiral symmetry with a large Nf may appear in the Higgs sector if one considers models such as walking technicolor theories. We examine the first-order restoration of the chiral symmetry from the point of view of the electroweak phase transition. The strength of the transition is estimated in SU(2) x U(1) gauged linear sigma model by means of the finite temperature effective potential at one-loop with the ring improvement. Even if the mass of the neutral scalar boson corresponding to the Higgs boson is larger than 114 GeV, the first-order transition can be strong enough for the electroweak baryogenesis, as long as the extra massive scalar bosons (required for the linear realization) are kept heavier than the neutral scalar boson. Explicit symmetry breaking terms reduce the strength of the first-order transition, but the transition can remain strongly first-order even when the masses of pseudo Nambu-Goldstone bosons become as large as the current lower bound of direct search experiments.Comment: 18 pages, 18 figures, minor corrections, references adde

Spin-polarized current amplification and spin injection in magnetic bipolar transistors

The magnetic bipolar transistor (MBT) is a bipolar junction transistor with an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or collector. The low-injection theory of spin-polarized transport through MBTs and of a more general case of an array of magnetic {\it p-n} junctions is developed and illustrated on several important cases. Two main physical phenomena are discussed: electrical spin injection and spin control of current amplification (magnetoamplification). It is shown that a source spin can be injected from the emitter to the collector. If the base of an MBT has an equilibrium magnetization, the spin can be injected from the base to the collector by intrinsic spin injection. The resulting spin accumulation in the collector is proportional to $\exp(qV_{be}/k_BT)$, where $q$ is the proton charge, $V_{be}$ is the bias in the emitter-base junction, and $k_B T$ is the thermal energy. To control the electrical current through MBTs both the equilibrium and the nonequilibrium spin can be employed. The equilibrium spin controls the magnitude of the equilibrium electron and hole densities, thereby controlling the currents. Increasing the equilibrium spin polarization of the base (emitter) increases (decreases) the current amplification. If there is a nonequilibrium spin in the emitter, and the base or the emitter has an equilibrium spin, a spin-valve effect can lead to a giant magnetoamplification effect, where the current amplifications for the parallel and antiparallel orientations of the the equilibrium and nonequilibrium spins differ significantly. The theory is elucidated using qualitative analyses and is illustrated on an MBT example with generic materials parameters.Comment: 14 PRB-style pages, 10 figure

Theory of spin-polarized bipolar transport in magnetic p-n junctions

The interplay between spin and charge transport in electrically and magnetically inhomogeneous semiconductor systems is investigated theoretically. In particular, the theory of spin-polarized bipolar transport in magnetic p-n junctions is formulated, generalizing the classic Shockley model. The theory assumes that in the depletion layer the nonequilibrium chemical potentials of spin up and spin down carriers are constant and carrier recombination and spin relaxation are inhibited. Under the general conditions of an applied bias and externally injected (source) spin, the model formulates analytically carrier and spin transport in magnetic p-n junctions at low bias. The evaluation of the carrier and spin densities at the depletion layer establishes the necessary boundary conditions for solving the diffusive transport equations in the bulk regions separately, thus greatly simplifying the problem. The carrier and spin density and current profiles in the bulk regions are calculated and the I-V characteristics of the junction are obtained. It is demonstrated that spin injection through the depletion layer of a magnetic p-n junction is not possible unless nonequilibrium spin accumulates in the bulk regions--either by external spin injection or by the application of a large bias. Implications of the theory for majority spin injection across the depletion layer, minority spin pumping and spin amplification, giant magnetoresistance, spin-voltaic effect, biasing electrode spin injection, and magnetic drift in the bulk regions are discussed in details, and illustrated using the example of a GaAs based magnetic p-n junction.Comment: 36 pages, 11 figures, 2 table

Novel multi-layer plastic-scintillator-based solid active proton target for inverse-kinematics experiments

We have constructed and tested a novel plastic-scintillator-based solid-state active proton target for use in nuclear spectroscopic studies with nuclear reactions induced by an ion beam in inverse kinematics. The active target system, named Stack Structure Solid organic Scintillator Active Target (S4AT), consists of five layers of plastic scintillators, each with a 1-mm thickness. To determine the reaction point in the thickness direction, we exploit the difference in the energy losses due to the beam particle and the charged reaction product(s) in the scintillator material. S4AT offers the prospect of a relatively thick target while maintaining a good energy resolution. By considering the relative energy loss between different layers, the energy loss due to unreacted beam particles can be eliminated. Such procedure, made possible by the multi-layer structure, is essential to eliminate the effect of unreacted accompanying beam particles, thus enabling its operation at a moderate beam intensity of up to a few Mcps. We evaluated the performance of S4AT by measuring the elastic proton-proton scattering using a 70-MeV proton beam at Cyclotron and Radioisotope Center (CYRIC), Tohoku University.Comment: 32 pages, 14 figure

Cilostazol Inhibits Accumulation of Triglyceride in Aorta and Platelet Aggregation in Cholesterol-Fed Rabbits

Cilostazol is clinically used for the treatment of ischemic symptoms in patients with chronic peripheral arterial obstruction and for the secondary prevention of brain infarction. Recently, it has been reported that cilostazol has preventive effects on atherogenesis and decreased serum triglyceride in rodent models. There are, however, few reports on the evaluation of cilostazol using atherosclerotic rabbits, which have similar lipid metabolism to humans, and are used for investigating the lipid content in aorta and platelet aggregation under conditions of hyperlipidemia. Therefore, we evaluated the effect of cilostazol on the atherosclerosis and platelet aggregation in rabbits fed a normal diet or a cholesterol-containing diet supplemented with or without cilostazol. We evaluated the effects of cilostazol on the atherogenesis by measuring serum and aortic lipid content, and the lesion area after a 10-week treatment and the effect on platelet aggregation after 1- and 10-week treatment. From the lipid analyses, cilostazol significantly reduced the total cholesterol, triglyceride and phospholipids in serum, and moreover, the triglyceride content in the atherosclerotic aorta. Cilostazol significantly reduced the intimal atherosclerotic area. Platelet aggregation was enhanced in cholesterol-fed rabbits. Cilostazol significantly inhibited the platelet aggregation in rabbits fed both a normal diet and a high cholesterol diet. Cilostazol showed anti-atherosclerotic and anti-platelet effects in cholesterol-fed rabbits possibly due to the improvement of lipid metabolism and the attenuation of platelet activation. The results suggest that cilostazol is useful for prevention and treatment of atherothrombotic diseases with the lipid abnormalities

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Spin-polarized Zener tunneling in (Ga,Mn)As

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.Comment: 11 pages, 4 figures. Submitted, Physical Review B15 Rapid Communication

Electron Spin Polarization in Resonant Interband Tunneling Devices

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.Comment: 11 pages, 4 eps figure

Physics of leptoquarks in precision experiments and at particle colliders

We present a comprehensive review of physics effects generated by leptoquarks (LQs), i.e., hypothetical particles that can turn quarks into leptons and vice versa, of either scalar or vector nature. These considerations include discussion of possible completions of the Standard Model that contain LQ fields. The main focus of the review is on those LQ scenarios that are not problematic with regard to proton stability. We accordingly concentrate on the phenomenology of light leptoquarks that is relevant for precision experiments and particle colliders. Important constraints on LQ interactions with matter are derived from precision low-energy observables such as electric dipole moments, (g-2) of charged leptons, atomic parity violation, neutral meson mixing, Kaon, B, and D meson decays, etc. We provide a general analysis of indirect constraints on the strength of LQ interactions with the quarks and leptons to make statements that are as model independent as possible. We address complementary constraints that originate from electroweak precision measurements, top, and Higgs physics. The Higgs physics analysis we present covers not only the most recent but also expected results from the Large Hadron Collider (LHC). We finally discuss direct LQ searches. Current experimental situation is summarized and self-consistency of assumptions that go into existing accelerator-based searches is discussed. A progress in making next-to-leading order predictions for both pair and single LQ productions at colliders is also outlined.Comment: 136 pages, 22 figures, typographical errors fixed, the Physics Reports versio