Charge control in laterally coupled double quantum dots

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.Comment: 4 pages, 4 figures submitted to PRB Rapid Com

Engineering and harnessing giant atoms in high-dimensional baths: a cold atoms' implementation

Emitters coupled simultaneously to distant positions of a photonic bath, the so-called giant atoms, represent a new paradigm in quantum optics. When coupled to one-dimensional baths, as recently implemented with transmission lines or SAW waveguides, they lead to striking effects such as chiral emission or decoherence-free atomic interactions. Here, we show how to create giant atoms in dynamical state-dependent optical lattices, which offers the possibility of coupling them to structured baths in arbitrary dimensions. This opens up new avenues to a variety of phenomena and opportunities for quantum simulation. In particular, we show how to engineer unconventional radiation patterns, like multi-directional chiral emission, as well as collective interactions that can be used to simulate non-equilibrium many-body dynamics with no analogue in other setups. Besides, the recipes we provide to harness giant atoms in high dimensions can be exported to other platforms where such non-local couplings can be engineered.Comment: 9 pages, 5 figures. Title changed to accommodate to the new focus of the main text. Several typos correcte

Factors affecting diabetic patient’s long-term quality of life after simultaneous pancreas-kidney transplantation: a single-center analysis

[Purpose]: Pancreas transplantation (PT) is one of the few ways to restore euglycemia within diabetic patients; however, the high morbidity caused by surgical complications and the need for immunosuppressive therapy has raised controversy about PT improving the health-related quality-of-life (HRQoL). The aim of this study is to assess the long-term (≥ 5 years after PT) HRQoL and to identify the factors affecting it.[Methods]: A single-center, cross-sectional study of 49 sequential PT was performed. All patients conducted a telephone interview to fulfill the modification of Medical Outcome Health Survey Short Form questionnaire (SF-36v2) and were compared to similar post-PT studies from the literature.[Results]: Patients with a history of replacement renal therapy (RRT) or neuropathy undergoing a PT were associated to a worse bodily pain (P = 0.03) and physical function (P = 0.04), respectively, whereas those with retinopathy showed an improved Role Emotional (P = 0.04). Multivariate analysis revealed the presence of RRT as the only independent prognostic factor for a worse bodily pain [relative risk = 3.9; 95% confidence interval (1.1–14.6)], (P = 0.04). Furthermore, nearly all PT recipients (91.8%) claimed an overall better health than prior to PT.[Conclusion]: Our study confirms that PT recipients’ HRQoL improves after PT, showing similar HRQoL scores across different populations and suggests that patients in predialysis could benefit from an improved HRQoL if transplanted on the early stages of the disease

Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites

On the mass of the neutron star in Cyg X-2

We present new high resolution spectroscopy of the low mass X-ray binary Cyg X-2 which enables us to refine the orbital solution and rotational broadening of the donor star. In contrast with Elebert et al (2009) we find a good agreement with results reported in Casares et al. (1998). We measure $P=9.84450\pm0.00019$ day, $K_2=86.5\pm1.2$ km s$^{-1}$ and $V \sin i=33.7\pm0.9$ km s$^{-1}$. These values imply $q=M_{2}/M_{1}=0.34 \pm 0.02$ and $M_{1}=1.71\pm 0.21$ M$_{\odot}$ (for $i=62.5 \pm 4^{\circ}$). Therefore, the neutron star in Cyg X-2 can be more massive than canonical. We also find no evidence for irradiation effects in our radial velocity curve which could explain the discrepancy between Elebert et al's and our $K_2$ values.Comment: Accepted for publication in MNRA

Electrical control of a laterally ordered InAs/InP quantum dash array

We have fabricated an array of closely spaced quantum dashes starting from a planar array of self-assembled semiconductor quantum wires. The array is embedded in a metallic nanogap which we investigate by micro-photoluminescence as a function of a lateral electric field. We demonstrate that the net electric charge and emission energy of individual quantum dashes can be modified externally with performance limited by the size inhomogeneity of the self-assembling process

Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. Vertical QD pairs with different size asymmetry have been fabricated controlling the bottom QD size independently of the areal density. The emission of individual pairs is dominated by spectral diffusion effects and charge instabilities induced by the local charge environment. Lateral QD pairs have been fabricated on GaAs nanoholes and studied as a function of an electric field applied in the growth plane.Peer Reviewe

Interaction of 8 He with 208Pb at near-barrier energies: 4 He and 6 He production

Spanish Ministry of Economy and Competitiveness-FPA-2010-22131-CO2-01 (FINURA) y FPA2013-47327-C2-1-RMinistry of Science and Higher Education of Poland-N202 033637National Science Centre of Poland-2013/08/M/ST2/00257 (LEA-COPIGAL) y 2014/14/M/ST2/00738 (COPIN-INFN Collaboration)European Science Foundation-EUI2009-04163432 (EUROGENESIS

Detection of the KIT D816V mutation in peripheral blood of systemic mastocytosis: diagnostic implications

Recent studies have found the KIT D816V mutation in peripheral blood of virtually all adult systemic mastocytosis patients once highly sensitive PCR techniques were used; thus, detection of the KIT D816V mutation in peripheral blood has been proposed to be included in the diagnostic work-up of systemic mastocytosis algorithms. However, the precise frequency of the mutation, the biological significance of peripheral blood-mutated cells and their potential association with involvement of bone marrow hematopoietic cells other than mast cells still remain to be investigated. Here, we determined the frequency of peripheral blood involvement by the KIT D816V mutation, as assessed by two highly sensitive PCR methods, and investigated its relationship with multilineage involvement of bone marrow hematopoiesis. Overall, our results confirmed the presence of the KIT D816V mutation in peripheral blood of most systemic mastocytosis cases (161/190; 85%)-with an increasing frequency from indolent systemic mastocytosis without skin lesions (29/44; 66%) to indolent systemic mastocytosis with skin involvement (124/135; 92%), and more aggressive disease subtypes (11/11; 100%)-as assessed by the allele-specific oligonucleotide-qPCR method, which was more sensitive (P<.0001) than the peptide nucleic acid-mediated PCR approach (84/190; 44%). Although the presence of the KIT mutation in peripheral blood, as assessed by the allele-specific oligonucleotide-qPCR technique, did not accurately predict for multilineage bone marrow involvement of hematopoiesis, the allele-specific oligonucleotide-qPCR allele burden and the peptide nucleic acid-mediated-PCR approach did. These results suggest that both methods provide clinically useful and complementary information through the identification and/or quantification of the KIT D816V mutation in peripheral blood of patients suspected of systemic mastocytosis.This work was supported in part by grants from the Fondo de Investigaciones Sanitarias (FIS; grant number PI11/02399, FEDER) and Red Temática de Investigación Cooperativa en Cancer (RTICC; grant number RD12/0036/0048, FEDER) of the Instituto deSalud Carlos III (Ministry of Economy and Competitivity, Madrid, Spain), from Fundacion Ramon Areces (Madrid, Spain; grant number CIVP16A1806) and from Ayudas a Proyectos de Investigación en Salud de la Fundación Mutua Madrileña 2014 and Asociación Española de Enfermos de Mastocitosis (AEDM 2014). The National DNA Bank is supported by grants from the Instituto de Salud Carlos III of the Ministerio de Economia y Competitividad of Spain (grand numbers PT13/0001/0037 and PT13/0010/ 0067, FEDER). AM was supported by RTICC.Peer Reviewe

High-pressure vibrational and optical study of Bi2Te3

We report an experimental and theoretical lattice dynamics study of bismuth telluride (Bi2Te3) up to 23 GPa together with an experimental and theoretical study of the optical absorption and reflection up to 10 GPa. The indirect bandgap of the low-pressure rhombohedral (R-3m) phase (α-Bi2Te3) was observed to decrease with pressure at a rate of −6 meV/GPa. In regard to lattice dynamics, Raman-active modes of α-Bi2Te3 were observed up to 7.4 GPa. The pressure dependence of their frequency and width provides evidence of the presence of an electronic-topological transition around 4.0 GPa. Above 7.4 GPa a phase transition is detected to the C2/m structure. On further increasing pressure two additional phase transitions, attributed to the C2/c and disordered bcc (Im-3m) phases, have been observed near 15.5 and 21.6 GPa in good agreement with the structures recently observed by means of x-ray diffraction at high pressures in Bi2Te3. After release of pressure the sample reverts back to the original rhombohedral phase after considerable hysteresis. Raman- and IR-mode symmetries, frequencies, and pressure coefficients in the different phases are reported and discussed.This work has been done under financial support from Spanish MICINN under projects MAT2008-06873-C02- 02, MAT2007-66129, Prometeo/2011-035, MAT2010-21270-C04-03/04, and CSD2007-00045 and supported by the Ministry of Education, Youth and Sports of the Czech Republic (MSM 0021627501)