Integration of additive manufacturing and inkjet printed electronics: a potential route to parts with embedded multifunctionality

Additive manufacturing, an umbrella term for a number of different manufacturing techniques, has attracted increasing interest recently for a number of reasons, such as the facile customisation of parts, reduced time to manufacture from initial design, and possibilities in distributed manufacturing and structural electronics. Inkjet printing is an additive manufacturing technique that is readily integrated with other manufacturing processes, eminently scalable and used extensively in printed electronics. It therefore presents itself as a good candidate for integration with other additive manufacturing techniques to enable the creation of parts with embedded electronics in a timely and cost effective manner. This review introduces some of the fundamental principles of inkjet printing; such as droplet generation, deposition, phase change and post-deposition processing. Particular focus is given to materials most relevant to incorporating structural electronics and how post-processing of these materials has been able to maintain compatibility with temperature sensitive substrates. Specific obstacles likely to be encountered in such an integration and potential strategies to address them will also be discussed

Solution-processed, Self-organized Organic Single Crystal Arrays with Controlled Crystal Orientation

A facile solution process for the fabrication of organic single crystal semiconductor devices which meets the demand for low-cost and large-area fabrication of high performance electronic devices is demonstrated. In this paper, we develop a bottom-up method which enables direct formation of organic semiconductor single crystals at selected locations with desired orientations. Here oriented growth of one-dimensional organic crystals is achieved by using self-assembly of organic molecules as the driving force to align these crystals in patterned regions. Based upon the self-organized organic single crystals, we fabricate organic field effect transistor arrays which exhibit an average field-effect mobility of 1.1 cm2V−1s−1. This method can be carried out under ambient atmosphere at room temperature, thus particularly promising for production of future plastic electronics

Improved performance in TIPS-pentacene field effect transistors using solvent additives

The effect of solvent additives on the performance of 6,13- bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) field effect transistors (FETs) was investigated. Hole mobilities increased from 0.10 cm 2 V-1 s-1 for pristine devices to 0.73 or 0.71 cm2 V-1 s-1, when TIPS-pentacene FETs were processed with diphenyl ether (DPE) or chloronaphthalene (CN), respectively. In order to examine the impact of additives on the surface morphology, molecular ordering and crystallinity of TIPS-pentacene, scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical microscopy measurements were carried out. Appropriate amounts of additives were found to induce the formation of well-ordered crystalline domains in TIPS-pentacene films, resulting in enhanced hole transport as well as consistent device performance. Additionally, reduced contact resistances were observed in devices processed with additives compared to neat TIPS-pentacene FET devices. Our findings indicate that the use of solvent additives constitutes a new and effective methodology for the fabrication of OFETs with improved performance.close4

Supramolecular approach to new inkjet printing inks

Electronically complementary, low molecular weight polymers that self-assemble through tunable π−π stacking interactions to form extended supramolecular polymer networks have been developed for inkjet printing applications and successfully deposited using three different printing techniques. Sequential overprinting of the complementary components results in supramolecular network formation through complexation of π-electron rich pyrenyl or perylenyl chain-ends in one component with π-electron deficient naphthalene diimide residues in a chain-folding polyimide. The complementary π−π stacked polymer blends generate strongly colored materials as a result of charge-transfer absorption bands in the visible spectrum, potentially negating the need for pigments or dyes in the ink formulation. Indeed, the final color of the deposited material can be tailored by varying the end-groups of the π-electron rich polymer component. Piezoelectric printing techniques were employed in a proof of concept study to allow characterization of the materials deposited, and a thermal inkjet printer adapted with imaging software enabled in situ analysis of the ink drops as they formed and of their physical properties. Finally, continuous inkjet printing allowed greater volumes of material to be deposited, on a variety of different substrate surfaces, and demonstrated the utility and versatility of this novel type of ink for industrial applications

Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm V−1 s−1

A ternary organic semiconducting blend composed of a small-molecule, a conjugated polymer, and a molecular p-dopant is developed and used in solution-processed organic transistors with hole mobility exceeding 13 cm(2) V(-1) s(-1) (see the Figure). It is shown that key to this development is the incorporation of the p-dopant and the formation of a vertically phase-separated film microstructure

Universal three-dimensional crosslinker for all-photopatterned electronics

All-solution processing of large-area organic electronics requires multiple steps of patterning and stacking of various device components. Here, we report the fabrication of highly integrated arrays of polymer thin-film transistors and logic gates entirely through a series of solution processes. The fabrication is done using a three-dimensional crosslinker in tetrahedral geometry containing four photocrosslinkable azide moieties, referred to as 4Bx. 4Bx can be mixed with a variety of solution-processable electronic materials (polymer semiconductors, polymer insulators, and metal nanoparticles) and generate crosslinked network under exposure to UV. Fully crosslinked network film can be formed even at an unprecedentedly small loading, which enables preserving the inherent electrical and structural characteristics of host material. Because the crosslinked electronic component layers are strongly resistant to chemical solvents, micropatterning the layers at high resolution as well as stacking the layers on top of each other by series of solution processing steps is possible