LDRD final report on high power broadly tunable Mid-IR quantum cascade lasers for improved chemical species detection.

The goal of our project was to examine a novel quantum cascade laser design that should inherently increase the output power of the laser while simultaneously providing a broad tuning range. Such a laser source enables multiple chemical species identification with a single laser and/or very broad frequency coverage with a small number of different lasers, thus reducing the size and cost of laser based chemical detection systems. In our design concept, the discrete states in quantum cascade lasers are replaced by minibands made of multiple closely spaced electron levels. To facilitate the arduous task of designing miniband-to-miniband quantum cascade lasers, we developed a program that works in conjunction with our existing modeling software to completely automate the design process. Laser designs were grown, characterized, and iterated. The details of the automated design program and the measurement results are summarized in this report

Microfabricated wire arrays for Z-pinch.

Microfabrication methods have been applied to the fabrication of wire arrays suitable for use in Z. Self-curling GaAs/AlGaAs supports were fabricated as an initial route to make small wire arrays (4mm diameter). A strain relief structure that could be integrated with the wire was designed to allow displacements of the anode/cathode connections in Z. Electroplated gold wire arrays with integrated anode/cathode bus connections were found to be sufficiently robust to allow direct handling. Platinum and copper plating processes were also investigated. A process to fabricate wire arrays on any substrate with wire thickness up to 35 microns was developed. Methods to handle and mount these arrays were developed. Fabrication of wire arrays of 20mm diameter was demonstrated, and the path to 40mm array fabrication is clear. With some final investment to show array mounting into Z hardware, the entire process to produce a microfabricated wire array will have been demonstrated

III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications

Final report on LDRD project : single-photon-sensitive imaging detector arrays at 1600 nm.

The key need that this project has addressed is a short-wave infrared light detector for ranging (LIDAR) imaging at temperatures greater than 100K, as desired by nonproliferation and work for other customers. Several novel device structures to improve avalanche photodiodes (APDs) were fabricated to achieve the desired APD performance. A primary challenge to achieving high sensitivity APDs at 1550 nm is that the small band-gap materials (e.g., InGaAs or Ge) necessary to detect low-energy photons exhibit higher dark counts and higher multiplication noise compared to materials like silicon. To overcome these historical problems APDs were designed and fabricated using separate absorption and multiplication (SAM) regions. The absorption regions used (InGaAs or Ge) to leverage these materials 1550 nm sensitivity. Geiger mode detection was chosen to circumvent gain noise issues in the III-V and Ge multiplication regions, while a novel Ge/Si device was built to examine the utility of transferring photoelectrons in a silicon multiplication region. Silicon is known to have very good analog and GM multiplication properties. The proposed devices represented a high-risk for high-reward approach. Therefore one primary goal of this work was to experimentally resolve uncertainty about the novel APD structures. This work specifically examined three different designs. An InGaAs/InAlAs Geiger mode (GM) structure was proposed for the superior multiplication properties of the InAlAs. The hypothesis to be tested in this structure was whether InAlAs really presented an advantage in GM. A Ge/Si SAM was proposed representing the best possible multiplication material (i.e., silicon), however, significant uncertainty existed about both the Ge material quality and the ability to transfer photoelectrons across the Ge/Si interface. Finally a third pure germanium GM structure was proposed because bulk germanium has been reported to have better dark count properties. However, significant uncertainty existed about the quantum efficiency at 1550 nm the necessary operating temperature. This project has resulted in several conclusions after fabrication and measurement of the proposed structures. We have successfully demonstrated the Ge/Si proof-of-concept in producing high analog gain in a silicon region while absorbing in a Ge region. This has included significant Ge processing infrastructure development at Sandia. However, sensitivity is limited at low temperatures due to high dark currents that we ascribe to tunneling. This leaves remaining uncertainty about whether this structure can achieve the desired performance with further development. GM detection in InGaAs/InAlAs, Ge/Si, Si and pure Ge devices fabricated at Sandia was shown to overcome gain noise challenges, which represents critical learning that will enable Sandia to respond to future single photon detection needs. However, challenges to the operation of these devices in GM remain. The InAlAs multiplication region was not found to be significantly superior to current InP regions for GM, however, improved multiplication region design of InGaAs/InP APDs has been highlighted. For Ge GM detectors it still remains unclear whether an optimal trade-off of parameters can achieve the necessary sensitivity at 1550 nm. To further examine these remaining questions, as well as other application spaces for these technologies, funding for an Intelligence Community post-doc was awarded this year

Final report on LDRD project 52722 : radiation hardened optoelectronic components for space-based applications.

This report describes the research accomplishments achieved under the LDRD Project 'Radiation Hardened Optoelectronic Components for Space-Based Applications.' The aim of this LDRD has been to investigate the radiation hardness of vertical-cavity surface-emitting lasers (VCSELs) and photodiodes by looking at both the effects of total dose and of single-event upsets on the electrical and optical characteristics of VCSELs and photodiodes. These investigations were intended to provide guidance for the eventual integration of radiation hardened VCSELs and photodiodes with rad-hard driver and receiver electronics from an external vendor for space applications. During this one-year project, we have fabricated GaAs-based VCSELs and photodiodes, investigated ionization-induced transient effects due to high-energy protons, and measured the degradation of performance from both high-energy protons and neutrons

The handbook for standardized field and laboratory measurements in terrestrial climate change experiments and observational studies (ClimEx)

1. Climate change is a world‐wide threat to biodiversity and ecosystem structure, functioning and services. To understand the underlying drivers and mechanisms, and to predict the consequences for nature and people, we urgently need better understanding of the direction and magnitude of climate change impacts across the soil–plant–atmosphere continuum. An increasing number of climate change studies are creating new opportunities for meaningful and high‐quality generalizations and improved process understanding. However, significant challenges exist related to data availability and/or compatibility across studies, compromising opportunities for data re‐use, synthesis and upscaling. Many of these challenges relate to a lack of an established ‘best practice’ for measuring key impacts and responses. This restrains our current understanding of complex processes and mechanisms in terrestrial ecosystems related to climate change. 2. To overcome these challenges, we collected best‐practice methods emerging from major ecological research networks and experiments, as synthesized by 115 experts from across a wide range of scientific disciplines. Our handbook contains guidance on the selection of response variables for different purposes, protocols for standardized measurements of 66 such response variables and advice on data management. Specifically, we recommend a minimum subset of variables that should be collected in all climate change studies to allow data re‐use and synthesis, and give guidance on additional variables critical for different types of synthesis and upscaling. The goal of this community effort is to facilitate awareness of the importance and broader application of standardized methods to promote data re‐use, availability, compatibility and transparency. We envision improved research practices that will increase returns on investments in individual research projects, facilitate second‐order research outputs and create opportunities for collaboration across scientific communities. Ultimately, this should significantly improve the quality and impact of the science, which is required to fulfil society's needs in a changing world

Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices

135 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs\sb{\rm 1-x}Sb\sb{\rm x} films and GaAs\sb{\rm 1-x}Sb\sb{\rm x}/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs\sb{\rm 1-x}Sb\sb{\rm x} across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows that good quality material can be obtained, but that the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.Strained layer GaAs\sb{\rm 1-x}Sb\sb{\rm x}/GaAs superlattices are characterized by x-ray diffraction, photoluminescence, photoreflectance, and optical absorption. Structural parameters derived from a kinematical x-ray diffraction model are used in conjunction with the results of optical characterization and an envelope function approximation bandstructure model to estimate the GaAs/GaSb band alignment. These results indicate that the superlattices are Type II.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD

Transverse momentum and pseudorapidity distributions of charged hadrons in pp collisions at (s)\sqrt(s) = 0.9 and 2.36 TeV

Measurements of inclusive charged-hadron transverse-momentum and pseudorapidity distributions are presented for proton-proton collisions at sqrt(s) = 0.9 and 2.36 TeV. The data were collected with the CMS detector during the LHC commissioning in December 2009. For non-single-diffractive interactions, the average charged-hadron transverse momentum is measured to be 0.46 +/- 0.01 (stat.) +/- 0.01 (syst.) GeV/c at 0.9 TeV and 0.50 +/- 0.01 (stat.) +/- 0.01 (syst.) GeV/c at 2.36 TeV, for pseudorapidities between -2.4 and +2.4. At these energies, the measured pseudorapidity densities in the central region, dN(charged)/d(eta) for |eta| < 0.5, are 3.48 +/- 0.02 (stat.) +/- 0.13 (syst.) and 4.47 +/- 0.04 (stat.) +/- 0.16 (syst.), respectively. The results at 0.9 TeV are in agreement with previous measurements and confirm the expectation of near equal hadron production in p-pbar and pp collisions. The results at 2.36 TeV represent the highest-energy measurements at a particle collider to date