Performance studies of the CMS strip tracker before installation

Peer reviewe

CMS physics technical design report : Addendum on high density QCD with heavy ions

Peer reviewe

Rational description of the ion-beam shaping mechanism

International audienc

Bulk radiation damage induced in thin epitaxial silicon detectors by 24 GeV protons

Radiation hardness of silicon detectors based on thin epitaxial layer for the LHC upgrade was studied. No type inversion was observed after irradiation by 24 GeV protons in the fluence range (1.5-10)1015 cm-2 due to overcompensating donor generation. After long-term annealing highly irradiated devices show decrease of effective doping concentration and then undergo type inversion. All mentioned means that thin epitaxial devices might be used for innermost layers of vertex detectors and need moderate cooling during beam off time. Properly chosen scenario might help to restore their working characteristics

Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4 x 10(14) cm(-2) the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 degrees C and the final passivation oxide was omitted. (c) 2005 Published by Elsevier B.V

Development of radiation hard silicon detectors: the SMART project

The research actitvity of the SMART project, a collaboration of Italian research institutes funded by the I.N.F.N., has been focused on the development of radiation hard silicon position sensitive detectors for the CERN Large Hadron Collider luminosity upgrade. Electrical characterization of pad and micro-strip devices as well as study of microscopic defects on the bulk material have been carried out on silicon 4” wafers of n- and p-type, grown with Standard Float Zone (SFz), high resistivity Magnetic Czochralski (MCz) and epitaxial (EPI) techniques. Manufactured devices have been irradiated with 24 GeV/c and26 MeV protons up to ~ 3x1015 cm-2 1 MeV neutrons eq. (neq/cm2) and with reactor neutrons up to ~8x1015 neq/cm2. Preliminary results of measurements before and after irradiations as well as material radiation hardness are shown and discussed