Objective assessment of low contrast detectability in computed tomography with Channelized Hotelling Observer

AbstractPurposeIterative algorithms introduce new challenges in the field of image quality assessment. The purpose of this study is to use a mathematical model to evaluate objectively the low contrast detectability in CT.Materials and methodsA QRM 401 phantom containing 5 and 8 mm diameter spheres with a contrast level of 10 and 20 HU was used. The images were acquired at 120 kV with CTDIvol equal to 5, 10, 15, 20 mGy and reconstructed using the filtered back-projection (FBP), adaptive statistical iterative reconstruction 50% (ASIR 50%) and model-based iterative reconstruction (MBIR) algorithms. The model observer used is the Channelized Hotelling Observer (CHO). The channels are dense difference of Gaussian channels (D-DOG). The CHO performances were compared to the outcomes of six human observers having performed four alternative forced choice (4-AFC) tests.ResultsFor the same CTDIvol level and according to CHO model, the MBIR algorithm gives the higher detectability index. The outcomes of human observers and results of CHO are highly correlated whatever the dose levels, the signals considered and the algorithms used when some noise is added to the CHO model. The Pearson coefficient between the human observers and the CHO is 0.93 for FBP and 0.98 for MBIR.ConclusionThe human observers' performances can be predicted by the CHO model. This opens the way for proposing, in parallel to the standard dose report, the level of low contrast detectability expected. The introduction of iterative reconstruction requires such an approach to ensure that dose reduction does not impair diagnostics

SPHERE IRDIS and IFS astrometric strategy and calibration

We present the current results of the astrometric characterization of the VLT planet finder SPHERE over 2 years of on-sky operations. We first describe the criteria for the selection of the astrometric fields used for calibrating the science data: binaries, multiple systems, and stellar clusters. The analysis includes measurements of the pixel scale and the position angle with respect to the North for both near-infrared subsystems, the camera IRDIS and the integral field spectrometer IFS, as well as the distortion for the IRDIS camera. The IRDIS distortion is shown to be dominated by an anamorphism of 0.60+/-0.02% between the horizontal and vertical directions of the detector, i.e. 6 mas at 1". The anamorphism is produced by the cylindrical mirrors in the common path structure hence common to all three SPHERE science subsystems (IRDIS, IFS, and ZIMPOL), except for the relative orientation of their field of view. The current estimates of the pixel scale and North angle for IRDIS are 12.255+/-0.009 milliarcseconds/pixel for H2 coronagraphic images and -1.75+/-0.08 deg. Analyses of the IFS data indicate a pixel scale of 7.46+/-0.02 milliarcseconds/pixel and a North angle of -102.18+/-0.13 deg. We finally discuss plans for providing astrometric calibration to the SPHERE users outside the instrument consortium.Comment: 12 pages, 6 figures, 3 table

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

International audienceWe demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electro-luminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents. F lexible light-emitting diodes (LEDs) are today a topic of intense research, motivated by their numerous economically relevant applications (e.g., rollable displays, wearable intelligent electronics, lightning, and so forth). Presently, flexible devices mainly use organic materials integrated on lightweight and flexible plastic substrates. Thanks to the flexibility, relative ease of processing, compatibility with various flexible substrates, and their low cost, organic LEDs (OLEDs) are today the key technology for flexible displays. In the past decades, the OLED performance has been tremendously improved. 1−4 However, they still face the issue of a poor time stability caused by the degradation of the electrical conductivity of the organic layers and of the interface degradation in the active region. 5−7 Especially, OLEDs present limitations in the short wavelength range, which has a detrimental influence on the color balance of the displays. Indeed, blue OLEDs suffer from a rather low luminance (around 10

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes

International audienceWe report on the demonstration of substrate-freenanowire /polydimethylsiloxane (PDMS) membrane light emitting diodes (LEDs). Metal-organic vapor phase epitaxy (MOVPE)-grown InGaN/GaN core−shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent ITO contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements the samples were manually bonded using silver paint.The EL spectra measured at different applied voltages demonstrate a blue-shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average Indium content

Twenty-One Years of Phytoplankton Bloom Phenology in the Barents, Norwegian, and North Seas

Phytoplankton blooms provide biomass to the marine trophic web, contribute to the carbon removal from the atmosphere and can be deadly when associated with harmful species. This points to the need to understand the phenology of the blooms in the Barents, Norwegian, and North seas. We use satellite chlorophyll-a from 2000 to 2020 to assess robust climatological and the interannual trends of spring and summer blooms onset, peak day, duration and intensity. Further, we also correlate the interannual variability of the blooms with mixed layer depth (MLD), sea surface temperature (SST), wind speed and suspended particulate matter (SPM) retrieved from models and remote sensing. The climatological spring blooms start on March 10th and end on June 19th. The climatological summer blooms begin on July 13th and end on September 17th. In the Barents Sea, years of shallower mixed layer (ML) driven by both calm waters and higher freshwaters input keeps the phytoplankton in the euphotic zone, causing the spring bloom to start earlier and reach higher biomass but end sooner due to the lack of nutrients upwelling from the deep. In the Norwegian Sea, a correlation between SST and the spring blooms is found. Here, warmer waters are correlated to earlier and stronger blooms in most regions but with later and weaker blooms in the eastern Norwegian Sea. In the North Sea, years of shallower ML reduces the phytoplankton sinking below the euphotic zone and limits the SPM increase from the bed shear stress, creating an ideal environment of stratified and clear waters to develop stronger spring blooms. Last, the summer blooms onset, peak day and duration have been rapidly delaying at a rate of 1.25-day year–1, but with inconclusive causes based on the parameters assessed in this study.publishedVersio

Long-range/short-range separation of the electron-electron interaction in density functional theory

By splitting the Coulomb interaction into long-range and short-range components, we decompose the energy of a quantum electronic system into long-range and short-range contributions. We show that the long-range part of the energy can be efficiently calculated by traditional wave function methods, while the short-range part can be handled by a density functional. The analysis of this functional with respect to the range of the associated interaction reveals that, in the limit of a very short-range interaction, the short-range exchange-correlation energy can be expressed as a simple local functional of the on-top pair density and its first derivatives. This provides an explanation for the accuracy of the local density approximation (LDA) for the short-range functional. Moreover, this analysis leads also to new simple approximations for the short-range exchange and correlation energies improving the LDA.Comment: 18 pages, 14 figures, to be published in Phys. Rev.

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of 12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.European CommissionMinisterio de Ciencia e InnovaciónComunidad de Madri

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of 12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.European CommissionMinisterio de Ciencia e InnovaciónComunidad de Madri