54 research outputs found

    In vivo and ex vivo percutaneous absorption of [14C]-bisphenol A in rats: a possible extrapolation to human absorption?

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    Bisphenol A (BPA) is a monomer used mainly in the synthesis of polycarbonates and epoxy resins. Percutaneous absorption is the second source of exposure, after inhalation, in the work environment. However, studies on this route of absorption are lacking or incomplete. In this study, percutaneous BPA absorption was measured in vivo and ex vivo in the rat, and ex vivo in humans. An approximately 12-fold difference in permeability between rat skin and human skin was found, with permeability being higher in the rat. In addition, inter- and intra-individual variability of up to tenfold was observed in humans. No accumulation of BPA in the skin was found during exposure. The skin clearance rate following exposure was estimated at 0.4 μg/cm²/h. Ex vivo and in vivo percutaneous absorption fluxes of BPA in the rat were in the same range (about 2.0 μg/cm²/h), suggesting that extrapolation to the in vivo situation in humans may be possible. The European tolerable daily intake (TDI) of BPA is 50 μg/kg body weight. However, many research projects have highlighted the significant effects of BPA in rodents at doses lower than 10 μg/kg/day. A 1-h occupational exposure over 2,000 cm² (forearms and hands) may lead to a BPA absorption of 4 μg/kg/day. This is 8% of the European TDI and is very close to the value at which effects have been observed in animals. This absorption must therefore be taken into account when evaluating risks of BPA exposure, at least until more relevant results on the toxicity of BPA in humans are available

    Non Destructive Evaluation of Containment Walls in Nuclear Power Plants

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    Two functions are regularly tested on the containment walls in order to anticipate a possible accident. The first is mechanical to resist at a possible internal over-pressure and the second is to prevent leakage. The reference accident LLOCA (Large Loss of Coolant Accident) is the rupture of a pipe in the primary circuit of a nuclear plant. In this case, the pressure and temperature can reach 5 bar and 180°C in 20 seconds. The national project ‘Non-destructive testing of the containment structures of nuclear plants’ aims at studying the non-destructive techniques capable to evaluate the concrete properties and its damaging or progression of cracks. This 4-year-project is segmented into two parts. The first consists in developing and selecting the most relevant NDEs (Non Destructive Evaluations) in the laboratory to reach these goals. These evaluations are developed in conditions representing the real conditions of the stresses generated during ten-yearly visits of the plants or those related to an accident. The second part consists in applying the selected techniques to two containment structures under pressure. The first (technique) is proposed by the ONERA (National Office for Aerospace Studies and Research of France) and the second is a mock-up of a containment wall on a 1/3 scale made by EDF (Electricity of France) within the VeRCoRs program. Communication bears on the part of the project that concerns the damaging and cracking follow-up. The tests are done in bending on 3 or 4 points in order to study the cracks’ generation, their propagation, as well as their opening and closing. The mostly ultrasonic techniques developed concern linear or non-linear acoustic: acoustic emission [1], LOCADIFF (Locating with diffuse ultrasound) [2], energy diffusion, surface waves velocity and attenuation, DAET (Dynamic Acousto-Elasticity Testing) [3]. The data contribute to providing the mapping of the parameters searched for, either in volume, in surface or globally. Image correlation is an important additional asset to validate the coherence of the data. The spatial normalization of the data allows proposing algorithms on the combination of the experimental data. The tests results are presented and they show the capacity and the limits of the evaluation of the volume, surface or global data. A data fusion procedure is associated with these results

    Genetic correlation between amyotrophic lateral sclerosis and schizophrenia

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    A. Palotie on työryhmän Schizophrenia Working Grp Psychiat jäsen.We have previously shown higher-than-expected rates of schizophrenia in relatives of patients with amyotrophic lateral sclerosis (ALS), suggesting an aetiological relationship between the diseases. Here, we investigate the genetic relationship between ALS and schizophrenia using genome-wide association study data from over 100,000 unique individuals. Using linkage disequilibrium score regression, we estimate the genetic correlation between ALS and schizophrenia to be 14.3% (7.05-21.6; P = 1 x 10(-4)) with schizophrenia polygenic risk scores explaining up to 0.12% of the variance in ALS (P = 8.4 x 10(-7)). A modest increase in comorbidity of ALS and schizophrenia is expected given these findings (odds ratio 1.08-1.26) but this would require very large studies to observe epidemiologically. We identify five potential novel ALS-associated loci using conditional false discovery rate analysis. It is likely that shared neurobiological mechanisms between these two disorders will engender novel hypotheses in future preclinical and clinical studies.Peer reviewe

    Fermi level engineering for large permittivity in BaTiO3-based multilayers

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    Multilayered doped BaTiO3 thin films have been fabricated by physical vapor deposition (PVD) on low-cost polycrystalline substrates with the aim to improve dielectric properties by controlling point charge defects at the interfaces. We show that carefully designed interfaces lead to increasing the relative permittivity of the BaTiO3 thin films, in contradiction with the common belief that interfaces behave as dead layers. High relative permittivity up to 1030 and tanδ = 4% at 100 kHz and room temperature were obtained on BaTiO3 multilayered films deposited on Si/Pt substrates by PVD. The large permittivity is suspected to be an extrinsic contribution due to band bending at the interfaces, as inferred by in-situ X-ray photoelectron spectroscopy. A 20-nm depletion layer was found to be associated with an interdiffusion of dopants, as measured by depth profiling with time-of-flight secondary ion mass spectrometry. The films exhibit high permittivity and low dielectric losses stable between 200 and 400 K, which meet the requirement of electronic application

    Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers

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    Multilayered doped BaTiO3 thin films have been fabricated by physical vapor deposition (PVD) on low-cost polycrystalline substrates with the aim to improve dielectric properties by controlling point charge defects at the interfaces. We show that carefully designed interfaces lead to increasing the relative permittivity of the BaTiO3 thin films, in contradiction with the common belief that interfaces behave as dead layers. High relative permittivity up to 1030 and tanδ = 4% at 100 kHz and room temperature were obtained on BaTiO3 multilayered films deposited on Si/Pt substrates by PVD. The large permittivity is suspected to be an extrinsic contribution due to band bending at the interfaces, as inferred by in-situ X-ray photoelectron spectroscopy. A 20-nm depletion layer was found to be associated with an interdiffusion of dopants, as measured by depth profiling with time-of-flight secondary ion mass spectrometry. The films exhibit high permittivity and low dielectric losses stable between 200 and 400 K, which meet the requirement of electronic applications

    Fermi Level Engineering for Large Permittivity in BaTiO3-Based Multilayers

    No full text
    Multilayered doped BaTiO3 thin films have been fabricated by physical vapor deposition (PVD) on low-cost polycrystalline substrates with the aim to improve dielectric properties by controlling point charge defects at the interfaces. We show that carefully designed interfaces lead to increasing the relative permittivity of the BaTiO3 thin films, in contradiction with the common belief that interfaces behave as dead layers. High relative permittivity up to 1030 and tanδ = 4% at 100 kHz and room temperature were obtained on BaTiO3 multilayered films deposited on Si/Pt substrates by PVD. The large permittivity is suspected to be an extrinsic contribution due to band bending at the interfaces, as inferred by in-situ X-ray photoelectron spectroscopy. A 20-nm depletion layer was found to be associated with an interdiffusion of dopants, as measured by depth profiling with time-of-flight secondary ion mass spectrometry. The films exhibit high permittivity and low dielectric losses stable between 200 and 400 K, which meet the requirement of electronic application
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