125 - 211 GHz low noise MMIC amplifier design for radio astronomy

To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers

Protein Unfolding by Peptidylarginine Deiminase SUBSTRATE SPECIFICITY AND STRUCTURAL RELATIONSHIPS OF THE NATURAL SUBSTRATES TRICHOHYALIN AND FILAGGRIN

Peptidylarginine deiminases, which are commonly found in mammalian cells, catalyze the deimination of protein-bound arginine residues to citrullines. However, very little is known about their substrate requirements and the significance or consequences of this postsynthetic modification. We have explored this reaction in vitro with two known substrates filaggrin and trichohyalin. First, the degree and rate of modification of arginines to citrullines directly correlates with the structural order of the substrate. In filaggrin, which has little structural order, the reaction proceeded rapidly to >95% completion. However, in the highly alpha-helical protein trichohyalin, the reaction proceeded slowly to about 25% and could be forced to a maximum of about 65%. Second, the rate and degree of modification depends on the sequence location of the target arginines. Third, we show by gel electrophoresis, circular dichroism, and fluorescence spectroscopy that the reaction interferes with organized protein structure: the net formation of >/=10% citrulline results in protein denaturation. Cyanate modification of the lysines in model alpha-helix-rich proteins to homocitrullines also results in loss of organized structure. These data suggest that the ureido group on the citrulline formed by the peptidylarginine deiminase enzyme modification functions to unfold proteins due to decrease in net charge, loss of potential ionic bonds, and interference with H bonds

125 - 211 GHz low noise MMIC amplifier design for radio astronomy

To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the performance of high electron mobility transistor (HEMT) based low noise amplifiers (LNAs) as an alternative approach for systems operating in the 125 — 211 GHz frequency range. A four-stage, common-source, unconditionally stable monolithic microwave integrated circuit (MMIC) design is presented using the state-of-the-art 35 nm indium phosphide HEMT process from Northrop Grumman Corporation. The simulated MMIC achieves noise temperature (T_e) lower than 58 K across the operational bandwidth, with average T_e of 38.8 K (corresponding to less than 5 times the quantum limit (hf/k) at 170 GHz) and forward transmission of 20.5 ± 0.85 dB. Input and output reflection coefficients are better than -6 and -12 dB, respectively, across the desired bandwidth. To the authors knowledge, no LNA currently operates across the entirety of this frequency range. Successful fabrication and implementation of this LNA would challenge the dominance SIS mixers have on sub-THz receivers

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers

Compact, Single-Stage MMIC InP HEMT Amplifier

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz)

670-GHz Down- and Up-Converting HEMT-Based Mixers

A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity

Cryogenic MMIC Low Noise Amplifiers for W-Band and Beyond

We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), which were designed for specific frequencies in the range of 70-200 GHz. We report on room temperature and cryogenic noise performance for a variety of circuits. The designs utilize Northrop Grumman Corporation’s (NGC) 35 nm gate length InP HEMT technology. Some of the lowest reported noise figures to date have been observed with this process at cryogenic temperatures

Search for new particles in events with energetic jets and large missing transverse momentum in proton-proton collisions at root s=13 TeV

A search is presented for new particles produced at the LHC in proton-proton collisions at root s = 13 TeV, using events with energetic jets and large missing transverse momentum. The analysis is based on a data sample corresponding to an integrated luminosity of 101 fb(-1), collected in 2017-2018 with the CMS detector. Machine learning techniques are used to define separate categories for events with narrow jets from initial-state radiation and events with large-radius jets consistent with a hadronic decay of a W or Z boson. A statistical combination is made with an earlier search based on a data sample of 36 fb(-1), collected in 2016. No significant excess of events is observed with respect to the standard model background expectation determined from control samples in data. The results are interpreted in terms of limits on the branching fraction of an invisible decay of the Higgs boson, as well as constraints on simplified models of dark matter, on first-generation scalar leptoquarks decaying to quarks and neutrinos, and on models with large extra dimensions. Several of the new limits, specifically for spin-1 dark matter mediators, pseudoscalar mediators, colored mediators, and leptoquarks, are the most restrictive to date.Peer reviewe

Combined searches for the production of supersymmetric top quark partners in proton-proton collisions at root s=13 TeV

A combination of searches for top squark pair production using proton-proton collision data at a center-of-mass energy of 13 TeV at the CERN LHC, corresponding to an integrated luminosity of 137 fb(-1) collected by the CMS experiment, is presented. Signatures with at least 2 jets and large missing transverse momentum are categorized into events with 0, 1, or 2 leptons. New results for regions of parameter space where the kinematical properties of top squark pair production and top quark pair production are very similar are presented. Depending on themodel, the combined result excludes a top squarkmass up to 1325 GeV for amassless neutralino, and a neutralinomass up to 700 GeV for a top squarkmass of 1150 GeV. Top squarks with masses from 145 to 295 GeV, for neutralino masses from 0 to 100 GeV, with a mass difference between the top squark and the neutralino in a window of 30 GeV around the mass of the top quark, are excluded for the first time with CMS data. The results of theses searches are also interpreted in an alternative signal model of dark matter production via a spin-0 mediator in association with a top quark pair. Upper limits are set on the cross section for mediator particle masses of up to 420 GeV