Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices forMajorana physics and quantum computing. The transport properties of nanowires can be tuned either by fieldeffect or doping. We investigated a series of InAs nanowires the conductivity of which has been modified byn-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined withatomic probe tomography to obtain information about the local incorporation of Te atoms. It was found thatthe Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. Theefficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, aJosephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed aclear increase of the critical current with increase of the dopant concentration

Te-doped selective-area grown InAs nanowires for superconducting hybrid devices

Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices forMajorana physics and quantum computing. The transport properties of nanowires can be tuned either by fieldeffect or doping. We investigated a series of InAs nanowires the conductivity of which has been modified byn-type doping using tellurium. In addition to electron microscopy studies, the wires were also examined withatomic probe tomography to obtain information about the local incorporation of Te atoms. It was found thatthe Te atoms mainly accumulate in the core of the nanowire and at the corners of the {110} side facets. Theefficiency of n-type doping was also confirmed by transport measurements. As a demonstrator hybrid device, aJosephson junction was fabricated using a nanowire as a weak link. The corresponding measurements showed aclear increase of the critical current with increase of the dopant concentration