Properties of PEDOT:PEG/ZnO/p-Si heterojunction diode

The zinc oxide (ZnO) and poly(3,4-ethylenedioxythiophene) bis-poly(ethyleneglycol) (PEDOT:PEG) films were deposited on p-Si substrate by sputter and spin coating methods, respectively. An organic/inorganic heterojunction diode having PEDOT:PEG/ZnO on p-Si substrate was fabricated. The barrier height (BH) and the ideality factor values for the device were found to be 0.82 ± 0.01 eV and 1.9 ± 0.01, respectively. It has been seen that the value of BH is significantly larger than those of conventional Au/p-Si metal–semiconductor contacts. The PEDOT:PEG/ZnO/p-Si heterostructure exhibits a non-ideal I–V behavior with the ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The modified Norde\u27s function combined with conventional forward I–V method was used to extract the parameters including the barrier height and series resistance. At the same time, the physical properties of ZnO and PEDOT:PEG films deposited by sputter and spin coating technique, respectively, were investigated at room temperature. The obtained results indicate that the electrical parameters of the diode are affected by structural properties of ZnO film and PEDOT:PEG organic film

Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis Route

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2490

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

This article reports the effect of n-type GaAs substrate orientation, namely (100), (311)A and (311)B, on the electrical properties of sulfonated polyaniline (SPAN)/GaAs heterojunction devices. In addition, the inhomogeneity of the interface between various GaAs substrates and SPAN is investigated in terms of barrier height and ideality factor by performing I–V measurements at different temperatures (20–420K). The I–V results indicate that the value of the rectification ratio (IF/IR) at 0.5V is higher for SPAN/(311)B GaAs samples than for SPAN/(100) GaAs and SPAN/(311)A GaAs samples. Moreover, the barrier height decreases and the ideality factor increases with decreasing temperature for all three heterostructure devices. The high value of mean barrier ˚¯ b of SPAN/(311)B (calculated from the plots of ˚b0 as a function of 1/2kT) confirms that the GaAs substrate orientation results in an increase of barrier homogeneities. Furthermore,the C-V characteristics were obtained at room temperature. The C-V measurements showed that the carrier distributions at the interface and away from the interface in high index (311) GaAs orientations are more uniform and have better barrier homogeneity than those grown on the conventional (100) GaAs substrates

A kinetic study of mercury(II) transport through a membrane assisted by new transport reagent

Background: A new organodithiophosphorus derivative, namely O-(1,3-Bispiperidino-2-propyl)-4-methoxy phenyldithiophosphonate, was synthesized and then the kinetic behavior of the transport process as a function of concentration, temperature, stirring rate and solvents was investigated.Results: The compound 1 was characterized by elemental analysis, IR, H-1 and P-31 NMR spectroscopies. The transport of mercury(II) ion by a zwitterionic dithiophosphonate 1 in the liquid membrane was studied and the kinetic behavior of the transport process as a function of concentration, temperature, stirring rate and solvents was investigated. The compound 1 is expected to serve as a model liquid membrane transport with mercury(II) ions.Conclusion: A kinetic study of mercury(II) transport through a membrane assisted by O-(1,3-Bispiperidino-2-propyl)4-methoxy phenyldithiophosphonate was performed. It can be concluded that the compound 1 can be provided a general and straightforward route to remove toxic metals ions such as mercury(II) ion from water or other solution

Effects of UV and white light illuminations on photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor

The effects of UV and white light illuminations on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor were investigated. The photosensitivity (I ph/I dark) values of the transistor in the OFF state were found to be 1.156 and 2.12 under UV 365 nm (for V g = -10 V) and white light illuminations (for V g = -10 V and P = 100 mW/cm 2), respectively. The threshold voltage value of the TIPS-pentacene transistor was shifted from a smaller (0.215 V) value to higher (1.095 V) value with UV illumination, while it was shifted from a negative value (-1.29 V) to positive value (0.525 V) with white light illumination. The mobility ? value (3.412 × 10 -2 cm 2/Vs) of the TIPS-pentacene transistor under dark is lower than that of the values under UV and white light illuminations. The sub-threshold swing value under dark is higher than that of under UV and white light illuminations. The interface trap density of the TIPS-pentacene transistor is decreased with increasing illumination. The lowest D it value (0.941 × 10 13 eV -1 cm -2) of the TIPS-pentacene transistor causes the highest mobility (6.322 × 10 -2 cm 2/Vs). The photoresponsivity R values of the TIPS-pentacene transistor vary from 11.58 mA/W to 53.48 mA/W. © 2012 Elsevier B.V.110T047This work was supported by the Turkish Scientific and Technological Research Council of Turkey (TUBITAK) (Project No. 110T047). Bayram Gunduz received his bachelor's degree in Physics from Firat University, Elazığ, Turkey, 2001–2005, master degree from Solid State Physics, Firat University, Elazığ, Turkey, 2005–2007, PhD degree from Solid State Physics, Firat University, Elazığ, Turkey, 2007–2011. He was research assistant in Solid State Physics, Muş Alparslan University, Muş, Turkey, 2009–2011. He is currently an Assist. Prof. Dr. in Department of Science Education, Muş Alparslan University, Muş, Turkey, November 2011. His main achievements include (A) organic semiconductors (polymers, monomers, organic compounds): (i) electrical and optical properties; (ii) electronic devices applications of organic semiconductors such as Schottky diode, P–N heterojunction diode, metal–insulator–semiconductor junctions, solar cells, thin-film transistor, photodiode. (B) Optical materials: (i) determination of the optical constants, (ii) refractive index dispersion. Fahrettin Yakuphanoglu obtained his master degree from Solid State Physics, Firat University, Elazığ, Turkey, 1996–1998, PhD from Solid State Physics, Firat University, Elazığ, Turkey, 1998–2002. He was Assoc. Prof. in Solid State Physics, Firat University, Elazığ, Turkey, 2004. He was Full Prof. in Solid State Physics, Firat University, Elazığ, Turkey, 2009. His main achievements are organic and inorganic electronics (solar cell, thin film transistors, diode, gas sensors), electronic devices based on solution process, nanoelectronics, liquid crystals and biosensors

Effects of channel widths, thicknesses of active layer on the electrical and photosensing properties of the 6,13-bis(triisopropylsilylethynyl) pentacene transistors by thermal evaporation method: Comparison study

TIPS-pentacene transistors were fabricated using thermal evaporation technique with different thicknesses of the active layer (TIPS-pentacene) and various channel widths deposited on SiO 2 layer and compared the performance and photo characteristics of TIPS-pentacene (300 nm) and (135 nm) transistors. In present review, we report the photoresponse performance of the pentacene thin-film transistors including various channel widths and active layer thickness. The performance and photo characteristics of the TIPS-pentacene (300 nm) and (135 nm) transistors were investigated under dark and white light illuminations and analyzed the effects of the channel widths and thickness of active layer on the electrical characteristics of the TIPS-pentacene transistor. The interface states of the TIPS-pentacene thin-film transistors were investigated. The photocurrent mechanism of the transistors was also discussed. Some important morphology parameters of the TIPS-pentacene thin film such as roughness and grain size were determined. The electrical and photosensing parameters of the TIPS-pentacene transistor such as mobility, threshold voltage, sub-threshold swing value, photosensitivity, photoresponse, I on/I off ratio, interface trap density, total trap density and photoresponsivity under dark and white light illuminations were determined. It was found that the channel width and active layer thickness of the pentacene transistors play an imporant role on the photoresponse of the pentacene transistors. © 2012 Elsevier B.V. All rights reserved.Firat University Scientific Research Projects Management Unit 110T047 Firat University Scientific Research Projects Management Unit: 1983This work was supported by Turkish Scientific and Technological Research Council of Turkey (TUBITAK) (Project No.110T047) and Management Unit of Scientific Research Projects of Firat University (FÜBAP) under Project 1983

Electronic and Photovoltaic Properties of p-Si/PCBM:MEH-PPV Organic-Inorganic Hybrid Photodiode

The photovoltaic and electronic properties of p-Si/poly[2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV):[6, 6]-phenyl $C_{61}$-butyric acid methyl ester (PCBM) organic-inorganic device have been investigated. The current-voltage characteristic of p-Si/PCBM:MEH-PPV photodiode includes series resistance effect and the diode indicates a non-ideal behavior. The photovoltaic effect in p-Si/PCBM:MEH-PPV photodiode is based on the formation of excitons and subsequent dissociation and charge collection at the electrodes. It is evaluated that p-Si/PCBM:MEH-PPV device is a photodiode with $V_{oc}$ of 84 mV and $I_{sc}$ of 3.47 nA electronic parameters

Grafting of some monomers onto cellulose by atom transfer radical polymerization. Electrical conductivity and thermal properties of resulting copolymers

The research team grafted N-cyclohexylacrylamide (NCHA), 4-vinylpyridine (4VP), diacetone acrylamide (DAAM) and diallylamine (DA) onto pulverized cellulose by atom transfer radical polymerization (ATRP). First, cellulose chloroacetate (Cell.ClAc) was prepared as a macroinitiator by reacting chloroacetyl chloride with primary alcoholic OH groups on powder cellulose, where CuCl and 2,2'-bipyridine were utilized as transition-metal compound and ligand, respectively. The graft copolymers were characterized by FT-IR, elemental and thermal analyses, as well as with regard to their electrical conductivity and optical parameters. The thermal stability of the graft copolymers was determined by the TGA method. The results indicated that all the grafting processes decreased the initial thermal stability of the cellulose. The electrical conductivity of the graft copolymers was measured as a function of temperature, and it was found that it increased with increasing temperature. This indicates that the studied copolymers exhibit semiconducting behavior. © 2018 Editura Academiei Romane. All rights reserved.FÜBAP-1795ACKNOWLEDGEMENT: The authors wish to thank the Fırat University Research Foundation for financial support of the project FÜBAP-1795