A ferroelectric memristor

Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures

Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes

We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and find an excellent agreement with simulations by taking into account several terms for magnetic anisotropy. Moreover, we demonstrate the large contribution of the out-of-plane torque in our junctions with asymmetric electrodes compared to the in-plane torque. Consequently, we provide a way to enhance the sensitivity of these devices for the detection of microwave frequency

Spin torque resonant vortex core expulsion for an efficient radio-frequency detection scheme

Spin-polarised radio-frequency currents, whose frequency is equal to that of the gyrotropic mode, will cause an excitation of the core of a magnetic vortex confined in a magnetic tunnel junction. When the excitation radius of the vortex core is greater than that of the junction radius, vortex core expulsion is observed, leading to a large change in resistance, as the layer enters a predominantly uniform magnetisation state. Unlike the conventional spin-torque diode effect, this highly tunable resonant effect will generate a voltage which does not decrease as a function of rf power, and has the potential to form the basis of a new generation of tunable nanoscale radio-frequency detectors

Vertical current induced domain wall motion in MgO-based magnetic tunnel junction with low current densities

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane of the magnetic layers suffer from a poor efficiency of the intrinsic torques acting on the DWs. A way to circumvent this problem is to use vertical current injection. In that case, theoretical calculations attribute the microscopic origin of DW displacements to the out-of-plane (field-like) spin transfer torque. Here we report experiments in which we controllably displace a DW in the planar electrode of a magnetic tunnel junction by vertical current injection. Our measurements confirm the major role of the out-of-plane spin torque for DW motion, and allow to quantify this term precisely. The involved current densities are about 100 times smaller than the one commonly observed with in-plane currents. Step by step resistance switching of the magnetic tunnel junction opens a new way for the realization of spintronic memristive devices

Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

As we reach the physical limit of Moore’s law and silicon based electronics, alternative schemes for memory and sensor devices are being proposed ona regular basis. The properties of ferroelectric materials on the nanoscale are key to developing device applications of this intriguing material class, and nanostructuring has been readily pursued in recent times. Focused ion beam (FIB) microscopy is one of the most signi cant techniques for achievingthis. When applied in tandem with the imaging and nanoscale manipulation afforded by proximal scanning force microscopy tools, FIB-driven nanoscale characterization has demonstrated the power and ability which simply may not be possible by other fabrication techniques in the search for innovative and novel ferroic phenomena. At the same time the process is not without pitfalls; it is time-consuming and success is not always guaranteed thus often being the bane in progress. This balanced review explores a brief history of the relationship between the FIB and ferroelectrics, the fascinating properties it has unveiled, the challenges associated with FIB that have led to alterna- tive nanostructuring techniques and nally new ideas that should be explored using this exciting technique

Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields

An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architectureope

Magnetic domain wall motion by spin transfer

The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied external field. Spin transfer can be used to induce magnetization reversals and oscillations, or to control the position of a magnetic domain wall. In this review, we focus on this last mechanism, which is today the subject of an extensive research, both because the microscopic details for its origin are still debated, but also because promising applications are at stake for non-volatile magnetic memories