125 research outputs found

    Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

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    It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7δ\rm{YBa_2Cu_3O_{7-\delta}} grown by pulsed laser deposition are annealed at up to 700 atm O2_2 and 900^\circC, in conjunction with Cu enrichment by solid-state diffusion. The films show clear formation of Y2Ba4Cu7O15δ\rm{Y_2Ba_4Cu_7O_{15-\delta}} and Y2Ba4Cu8O16\rm{Y_2Ba_4Cu_8O_{16}} as well as regions of YBa2Cu5O9δ\rm{YBa_2Cu_5O_{9-\delta}} and YBa2_2Cu6_6O10δ_{10-\delta} phases, according to scanning transmission electron microscopy, x-ray diffraction and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7δ\rm{YBa_2Cu_3O_{7-\delta}} powders show no phase conversion. Our results demonstrate a novel route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.Comment: Accepted for publication in Physical Review Material

    Controlling the interfacial conductance in LaAlO₃/SrTiO₃ in 90∘ off-axis sputter deposition

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    We report on the fabrication of conducting interfaces between LaAlO 3 and SrTiO 3 by 90 ∘ off-axis sputtering in an Ar atmosphere. At a growth pressure of 0.04 mbar the interface is metallic, with a carrier density of the order of 1 × 10 13 cm − 2 at 3 K. By increasing the growth pressure, we observe an increase of the out-of-plane lattice constants of the LaAlO 3 films while the in-plane lattice constants do not change. Also, the low-temperature sheet resistance increases with increasing growth pressure, leading to an insulating interface when the growth pressure reaches 0.10 mbar. We attribute the structural variations to an increase of the La/Al ratio, which also explains the transition from metallic behavior to insulating behavior of the interfaces. Our research shows that the control which is furnished by the Ar pressure makes sputtering as versatile a process as pulsed laser deposition, and emphasizes the key role of the cation stoichiometry of LaAlO 3 in the formation of the conducting interface

    Long-term dry immersion: review and prospects

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    Dry immersion, which is a ground-based model of prolonged conditions of microgravity, is widely used in Russia but is less well known elsewhere. Dry immersion involves immersing the subject in thermoneutral water covered with an elastic waterproof fabric. As a result, the immersed subject, who is freely suspended in the water mass, remains dry. For a relatively short duration, the model can faithfully reproduce most physiological effects of actual microgravity, including centralization of body fluids, support unloading, and hypokinesia. Unlike bed rest, dry immersion provides a unique opportunity to study the physiological effects of the lack of a supporting structure for the body (a phenomenon we call \u27supportlessness\u27). In this review, we attempt to provide a detailed description of dry immersion. The main sections of the paper discuss the changes induced by long-term dry immersion in the neuromuscular and sensorimotor systems, fluid-electrolyte regulation, the cardiovascular system, metabolism, blood and immunity, respiration, and thermoregulation. The long-term effects of dry immersion are compared with those of bed rest and actual space flight. The actual and potential uses of dry immersion are discussed in the context of fundamental studies and applications for medical support during space flight and terrestrial health care

    Controlling the interfacial conductance in LaAlO3/SrTiO3 in 90^o off-axis sputter deposition

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    Quantum Matter and Optic

    Does resistance exercise prevent body fluid changes after a 90-day bed rest ?

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    Coupling charge and topological reconstructions at polar oxide interfaces

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    In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way to the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wavefunctions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO3_3, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO3_3, a polar wide-bandgap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO2_2/SrO interface configuration, leading to excess charge being pinned near the LaAlO3_3/SrRuO3_3 interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction modifies the momentum-space Berry curvature in SrRuO3_3, driving a reorganization of the topological charges in the band structure. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.Comment: 5 pages main text (4 figures), 29 pages of supplementary informatio

    Formation of a conducting LaAlO3/SrTiO3 interface studied by low-energy electron reflection during growth

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    The two-dimensional electron gas occurring between the band insulators SrTiO3 and LaAlO3 continues to attract considerable interest, due to the possibility of dynamic control over the carrier density and due to ensuing phenomena such as magnetism and superconductivity. The formation of this conducting interface is sensitive to the growth conditions, but despite numerous investigations there are still questions about the details of the physics involved. In particular, not much is known about the electronic structure of the growing LaAlO3 layer at the growth temperature (around 800∘C ) in oxygen (pressure around 5×10−5 mbar), since analysis techniques at these conditions are not readily available. We developed a pulsed laser deposition system inside a low-energy electron microscope in order to study this issue. The setup allows for layer-by-layer growth control and in situ measurements of the angle-dependent electron reflection intensity, which can be used as a fingerprint of the electronic structure of the surface layers during growth. By using different substrate terminations and growth conditions we observe two families of reflectivity maps, which we can connect either to samples with an AlO2 -rich surface and a conducting interface or to samples with a LaO-rich surface and an insulating interface. Our observations emphasize that substrate termination and stoichiometry determine the electronic structure of the growing layer, and thereby the conductance of the interface.Quantum Matter and Optic
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