Debris flows in the eastern Italian Alps: seasonality and atmospheric circulation patterns

Abstract. The work examines the seasonality and large-scale atmospheric circulation patterns associated with debris-flow occurrence in the Trentino–Alto Adige region (eastern Italian Alps). Analysis is based on classification algorithms applied to a uniquely dense archive of debris flows and hourly rain gauge precipitation series covering the period 2000–2009. Results highlight the seasonal and synoptic forcing patterns linked to debris flows in the study area. Summer and fall season account for 92% of the debris flows in the record, while atmospheric circulation characterized by zonal west, mixed and meridional south and southeast (SE–S) patterns account for 80%. Both seasonal and circulation patterns exhibit geographical preference. In the case of seasonality, there is a strong north–south separation of summer–fall dominance, while spatial distribution of dominant circulation patterns exhibits clustering, with both zonal west and mixed patterns prevailing in the northwest and central east part of the region, while the southern part relates to meridional south and southeast pattern. Seasonal and synoptic pattern dependence is pronounced also on the debris-flow-triggering rainfall properties. Examination of rainfall intensity–duration thresholds derived for different data classes (according to season and synoptic pattern) revealed a distinct variability in estimated thresholds. These findings imply a certain control on debris-flow events and can therefore be used to improve existing alert systems

Ethical issues associated with in-hospital emergency from the medical emergency team's perspective: a national survey

Medical Emergency Teams (METs) are frequently involved in ethical issues associated to in-hospital emergencies, like decisions about end-of-life care and intensive care unit (ICU) admission. MET involvement offers both advantages and disadvantages, especially when an immediate decision must be made. We performed a survey among Italian intensivists/anesthesiologists evaluating MET's perspective on the most relevant ethical aspects faced in daily practice

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs

Abstract This paper presents an extensive analysis of the impact of substrate and buffer properties on the performance and breakdown voltage of E-mode power HEMTs. We investigated the impact of buffer thickness, substrate resistivity and substrate miscut angle, by characterizing several wafers by means of DC and pulsed measurement. The results demonstrate that: (i) the resistivity of the silicon substrate strongly impacts on the breakdown voltage and vertical leakage current. In fact, highly resistive substrates may partly deplete under high vertical bias, thus limiting the total potential drop on the epitaxial layers. As a consequence, the vertical I V plots show a "plateau", that limits the vertical leakage. (ii) the depletion of the substrate may worsen the dynamic performance of the devices, due to an enhancement of buffer trapping. (iii) Larger buffer thickness results in an increased robustness of the vertical stack, due to the thicker insulating region. (iv) the miscut angle (0°, 0.5°, and 1°) can significantly impact on both threshold voltage and the 2DEG density; devices with miscut substrate have higher current density. On the other hand, the dynamic on-resistance variation is comparable in the three cases

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

In this letter, we present an extensive analysis on the role of both switching frequency (ranging from 100 kHz to 1 MHz) and duty cycle (from 10% to 90%) on the time-dependent gate breakdown of high electron mobility transistors (HEMTs) with Schottky metal to p-GaN gate. More specifically, results show how the gate lifetime of GaN HEMTs increases by reducing the frequency and the duty cycle of the stressing gate signal (VG). Such behavior is ascribed to the OFF-time, which is responsible to alter the electrostatic potential in the p-GaN layer during the rising phases of VG (from OFF- to ON-state). Findings of this analysis are useful both for further technology improvement and for GaN-based power circuit designers

Multiregional Satellite Precipitation Products Evaluation over Complex Terrain

An extensive evaluation of nine global-scale high-resolution satellite-based rainfall (SBR) products is performed using a minimum of 6 years (within the period of 2000-13) of reference rainfall data derived from rain gauge networks in nine mountainous regions across the globe. The SBR products are compared to a recently released global reanalysis dataset from the European Centre for Medium-Range Weather Forecasts (ECMWF). The study areas include the eastern Italian Alps, the Swiss Alps, the western Black Sea of Turkey, the French Cévennes, the Peruvian Andes, the Colombian Andes, the Himalayas over Nepal, the Blue Nile in East Africa, Taiwan, and the U.S. Rocky Mountains. Evaluation is performed at annual, monthly, and daily time scales and 0.25° spatial resolution. The SBR datasets are based on the following retrieval algorithms: Tropical Rainfall Measuring Mission Multisatellite Precipitation Analysis (TMPA), the NOAA/Climate Prediction Center morphing technique (CMORPH), Precipitation Estimation from Remotely Sensed Information Using Artificial Neural Networks (PERSIANN), and Global Satellite Mapping of Precipitation (GSMaP). SBR products are categorized into those that include gauge adjustment versus unadjusted. Results show that performance of SBR is highly dependent on the rainfall variability. Many SBR products usually underestimate wet season and overestimate dry season precipitation. The performance of gauge adjustment to the SBR products varies by region and depends greatly on the representativeness of the rain gauge network

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

We present a first study of threshold voltage instabilities of semi-vertical GaN-on-Si trench-MOSFETs, based on double pulsed, threshold voltage transient, and UV-Assisted C-V analysis. Under positive gate stress, small negative V th shifts (low stress) and a positive V thshifts (high stress) are observed, ascribed to trapping within the insulator and at the metal/insulator interface. Trapping effects are eliminated through exposure to UV light; wavelength-dependent analysis extracts the threshold de-Trapping energy ≈2.95 eV. UV-Assisted CV measurements describe the distribution of states at the GaN/Al2O3 interface. The described methodology provides an understanding and assessment of trapping mechanisms in vertical GaN transistors

Exploration of Gate Trench Module for Vertical GaN devices

The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of the p-GaN layer. The analysis was carried out by comparing the main DC parameters of devices that differ in surface cleaning process of the gate trench, gate dielectric thickness, and body layer doping. . On the basis of experimental results, we report that: (i) a good cleaning process of the etched GaN surface of the gate trench is a key factor to enhance the device performance, (ii) a gate dielectric >35-nm SiO2 results in a narrow distribution for DC characteristics, (iii) lowering the p-doping in the body layer improves the ON-resistance (RON). Gate capacitance measurements are performed to further confirm the results. Hypotheses on dielectric trapping/detrapping mechanisms under positive and negative gate bias are reported.Comment: 5 pages, 10 figures, submitted to Microelectronics Reliability (Special Issue: 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020

On the reproducibility and repeatability of laser absorption spectroscopy measurements for δ2H and δ18O isotopic analysis

The aim of this study was to analyse the reproducibility of off-axis integrated cavity output spectroscopy (OA-ICOS)-derived δ2H and δ18O measurements on a set of 35 water samples by comparing the performance of four laser spectroscopes with the performance of a conventional mass spectrometer under typical laboratory conditions. All samples were analysed using three different schemes of standard/sample combinations and related data processing to assess the improvement of results compared with mass spectrometry. The repeatability of the four OA-ICOS instruments was further investigated by multiple analyses of a sample subset to evaluate the stability of δ2H and δ18O measurements. Results demonstrated an overall agreement between OA-ICOS-based and mass spectrometry-based measurements for the entire dataset. However, a certain degree of variability existed in precision and accuracy between the four instruments. There was no evident bias or systematic deviations from the mass spectrometer values, but random errors, which were apparently not related to external factors, significantly affected the final results. Our investigation revealed that analytical precision ranged ±from ±0.56‰ to ±1.80‰ for δ2H and from ±0.10‰ to ±0.27‰ for δ18O measurements, with a marked variability among the four instruments. The overall capability of laser instruments to reproduce stable results with repeated measurements of the same sample was acceptable, and there were general differences within the range of the analytical precision for each spectroscope. Hence, averaging the measurements of three identical samples led to a higher degree of accuracy and eliminated the potential for random deviations

Second-harmonic generation in silicon waveguides strained by silicon nitride

Silicon photonics meets the electronics requirement of increased speed and bandwidth with on-chip optical networks. All-optical data management requires nonlinear silicon photonics. In silicon only third-order optical nonlinearities are present owing to its crystalline inversion symmetry. Introducing a second-order nonlinearity into silicon photonics by proper material engineering would be highly desirable. It would enable devices for wideband wavelength conversion operating at relatively low optical powers. Here we show that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer. We carried out second-harmonic-generation experiments and first-principle calculations, which both yield large values of strain-induced bulk second-order nonlinear susceptibility, up to 40pm/V at 2.300 nm. We envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near- to mid-infrared spectrum from 1.2 to 10 micron

Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

Compact modeling of charge trapping processes in GaN transistors is of fundamental importance for advanced circuit design. The goal of this article is to propose a methodology for modeling the dynamic characteristics of GaN power HEMTs in the realistic case where trapping/detrapping kinetics are described by stretched exponentials, contrary to ideal pure exponentials, thus significantly improving the state of the art. The analysis is based on: 1) an accurate methodology for describing stretched-exponential transients and extracting the related parameters and 2) a novel compact modeling approach, where the stretched exponential behavior is reproduced via multiple RC networks, whose parameters are specifically tuned based on the results of 1). The developed compact model is then used to simulate the transient performance of the HEMT devices as a function of duty cycle and frequency, thus providing insight on the impact of traps during the realistic switching operatio