RF CMOS Oscillators for Modern Wireless Applications

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include: Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMO

RF CMOS Oscillators for Modern Wireless Applications

While mobile phones enjoy the largest production volume ever of any consumer electronics products, the demands they place on radio-frequency (RF) transceivers are particularly aggressive, especially on integration with digital processors, low area, low power consumption, while being robust against process-voltage-temperature variations. Since mobile terminals inherently operate on batteries, their power budget is severely constrained. To keep up with the ever increasing data-rate, an ever-decreasing power per bit is required to maintain the battery lifetime. The RF oscillator is the second most power-hungry block of a wireless radio (after power amplifiers). Consequently, any power reduction in an RF oscillator will greatly benefit the overall power efficiency of the cellular transceiver. Moreover, the RF oscillators' purity limits the transceiver performance. The oscillator's phase noise results in power leakage into adjacent channels in a transmit mode and reciprocal mixing in a receive mode. On the other hand, the multi-standard and multi-band transceivers that are now trending demand wide tuning range oscillators. However, broadening the oscillator’s tuning range is usually at the expense of die area (cost) or phase noise. The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable. Technical topics discussed in RF CMOS Oscillators for Modern Wireless Applications include: Design and analysis of low phase-noise class-F oscillators Analyze a technique to reduce 1/f noise up-conversion in the oscillators Design and analysis of low power/low voltage oscillators Wide tuning range oscillators Reliability study of RF oscillators in nanoscale CMO

Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads

Design and implementation of fully integrated low-voltage low-noise CMOS VCO.

Yip Kim-fung.Thesis (M.Phil.)--Chinese University of Hong Kong, 2002.Includes bibliographical references (leaves 95-100).Abstracts in English and Chinese.Abstract --- p.IAcknowledgement --- p.IIITable of Contents --- p.IVChapter Chapter 1 --- Introduction --- p.1Chapter 1.1 --- Motivation --- p.1Chapter 1.2 --- Objective --- p.6Chapter Chapter 2 --- Theory of Oscillators --- p.7Chapter 2.1 --- Oscillator Design --- p.7Chapter 2.1.1 --- Loop-Gain Method --- p.7Chapter 2.1.2 --- Negative Resistance-Conductance Method --- p.8Chapter 2.1.3 --- Crossed-Coupled Oscillator --- p.10Chapter Chapter 3 --- Noise Analysis --- p.15Chapter 3.1 --- Origin of Noise Sources --- p.16Chapter 3.1.1 --- Flicker Noise --- p.16Chapter 3.1.2 --- Thermal Noise --- p.17Chapter 3.1.3 --- Noise Model of Varactor --- p.18Chapter 3.1.4 --- Noise Model of Spiral Inductor --- p.19Chapter 3.2 --- Derivation of Resonator --- p.19Chapter 3.3 --- Phase Noise Model --- p.22Chapter 3.3.1 --- Leeson's Model --- p.23Chapter 3.3.2 --- Phase Noise Model defined by J. Cranincks and M Steyaert --- p.24Chapter 3.3.3 --- Non-linear Analysis of Phase Noise --- p.26Chapter 3.3.4 --- Flicker-Noise Upconversion Mechanism --- p.31Chapter 3.4 --- Phase Noise Reduction Techniques --- p.33Chapter 3.4.1 --- Conventional Tank Circuit Structure --- p.33Chapter 3.4.2 --- Enhanced Q tank circuit Structure --- p.35Chapter 3.4.3 --- Tank Circuit with parasitics --- p.37Chapter 3.4.4 --- Reduction of Up-converted Noise --- p.39Chapter Chapter 4 --- CMOS Technology and Device Modeling --- p.42Chapter 4.1 --- Device Modeling --- p.42Chapter 4.1.1 --- FET model --- p.42Chapter 4.1.2 --- Layout of Interdigitated FET --- p.46Chapter 4.1.3 --- Planar Inductor --- p.48Chapter 4.1.4 --- Circuit Model of Planar Inductor --- p.50Chapter 4.1.5 --- Inductor Layout Consideration --- p.54Chapter 4.1.6 --- CMOS RF Varactor --- p.55Chapter 4.1.7 --- Parasitics of PMOS-type varactor --- p.57Chapter Chapter 5 --- Design of Integrated CMOS VCOs --- p.59Chapter 5.1 --- 1.5GHz CMOS VCO Design --- p.59Chapter 5.1.1 --- Equivalent circuit model of differential LC VCO --- p.59Chapter 5.1.2 --- Reference Oscillator Circuit --- p.61Chapter 5.1.3 --- Proposed Oscillator Circuit --- p.62Chapter 5.1.4 --- Output buffer --- p.63Chapter 5.1.5 --- Biasing Circuitry --- p.64Chapter 5.2 --- Spiral Inductor Design --- p.65Chapter 5.3 --- Determination of W/L ratio of FET --- p.67Chapter 5.4 --- Varactor Design --- p.68Chapter 5.5 --- Layout (Cadence) --- p.69Chapter 5.6 --- Circuit Simulation (SpectreRF) --- p.74Chapter Chapter 6 --- Experimental Results and Discussion --- p.76Chapter 6.1 --- Measurement Setup --- p.76Chapter 6.2 --- Measurement results: Reference Oscillator Circuit --- p.81Chapter 6.2.1 --- Output Spectrum --- p.81Chapter 6.2.2 --- Phase Noise Performance --- p.82Chapter 6.2.3 --- Tuning Characteristic --- p.83Chapter 6.2.4 --- Microphotograph --- p.84Chapter 6.3 --- Measurement results: Proposed Oscillator Circuit --- p.85Chapter 6.3.1 --- Output Spectrum --- p.85Chapter 6.3.2 --- Phase Noise Performance --- p.86Chapter 6.3.3 --- Tuning Characteristic --- p.87Chapter 6.3.4 --- Microphotograph --- p.88Chapter 6.4 --- Comparison of Measured Results --- p.89Chapter 6.4.1 --- Phase Noise Performance --- p.89Chapter 6.4.2 --- Tuning Characteristic --- p.90Chapter Chapter 7 --- Conclusion and Future Work --- p.93Chapter 7.1 --- Conclusion --- p.93Chapter 7.2 --- Future Work --- p.94References --- p.95Author's Publication --- p.100Appendix A --- p.101Appendix B --- p.104Appendix C --- p.10

Design Of A 2.4 Ghz Low Power Lc Vco In Umc 0.18u Technology

Tez (Yüksek Lisans) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2007Thesis (M.Sc.) -- İstanbul Technical University, Institute of Science and Technology, 2007Bu çalışmada, Bluetooth uygulamalarında kullanılmak üzere 2.45GHz merkez frekansında çalışan, frekans ayarlaması 2.2GHz ile 2.7GHz arasında değişen, düşük güç (2mW) tüketimi sağlayan bir LC GKO (VCO) tasarlanmıştır. Faz gürültüsünü minimize etmek maksadıyla 4 bit anahtarlamalı IMOS dizisinden yararlanılmıştır. Ayrıca frekansın ince ayarı için kapasite kuplajlı diyot varaktör devresi eklenmiştir. Bu frekans ayarlama tekniğinin faz gürültüsüne etkisi en kötü hal için 50kHz ofsette yaklaşık olarak 2dBc/Hz olup yüksek ofsetlerde yok denecek kadar azdır. Devrenin kaba kontrol gerilimleri 1.4V ve 0V olup, ince ayar gerilimi ise 0.5V ile 1.4V arasındadır. Besleme geriliminin 1.4V olduğu dikkate alındığında devre yüksek entegrasyon olanağı sunmaktadır. Faz gürültüsü 50kHz ofsette -88.6dBc/Hz ile -94.36dBc/Hz arasında olup 3MHz ofsette ise -128.3dBc/Hz ile -130.5dBc/Hz değerlerine ulaşmaktadır.Bu devreye ek olarak daha düşük gerilimli farklı topolojiler aynı akım akıtacak şekilde tasarlanmış ve tezin aynı zamanda ISM bandında çalışan düşük güç sarfiyatı isteyen uygulamalarda gerekli olacak bir GKO ihtiyacı için karşılaştırmalı bir çalışma olması sağlanmıştır.In this study, a low power LC VCO which operates at a center frequency of 2.45GHz over the range between 2.2GHz and 2.7GHz is designed for Bluetooth applications. The oscillator consumes 2mW at a supply voltage of 1.4V. To minimize the phase noise generated by the varactor through AM-PM conversion, 4bits SCA varactor is implemented by employing IMOS varactors. For fine tuning of frequency, a capacitor coupled diode varactor structure is designed. The effect of this overall varactor structure on the phase noise is around 2dBc/Hz at 50kHz offset for the worst case whereas it is negligble at high offsets. The coarse control tuning voltage values are 0V and 1.4V and the fine tuning control voltage varies from 0.5V to 1.4V. Hence, a high integration is achieved by keeping the external voltage at power supply voltage. The phase noise is between -88.6dBc/Hz and -94.36dBc/Hz at 50kHz offset, and between -128.3dBc/Hz and -130.5dBc/Hz at 3MHz offset. In addition to this, several circuits enabling lower supply voltage are simulated by keeping the same current in order to constitute a comparative study for low power applications which do not require stringent phase noise specification at 2.4GHz.Yüksek LisansM.Sc

Low-power transceiver design for mobile wireless chemical biological sensors

The design of a smart integrated chemical sensor system that will enhance sensor performance and compatibility to Ad hoc network architecture remains a challenge. This work involves the design of a Transceiver for a mobile chemical sensor. The transceiver design integrates all building blocks on-chip, including a low-noise amplifier with an input-matching network, a Voltage Controlled Oscillator with injection locking, Gilbert cell mixers, and a Class E Power amplifier making it as a single-chip transceiver. This proposed low power 2GHz transceiver has been designed in TSMC 0.35~lm CMOS process using Cadence electronic design automation tools. Post layout HSPICE simulation indicates that Design meets the separation of noise levels by 52dB and 42dB in transmitter and receiver respectively with power consumption of 56 mW and 38 mW in transmit and receive mode

Digital PLL for ISM applications

In modern transceivers, a low power PLL is a key block. It is known that with the evolution of technology, lower power and high performance circuitry is a challenging demand. In this thesis, a low power PLL is developed in order not to exceed 2mW of total power consumption. It is composed by small area blocks which is one of the main demands. The blocks that compose the PLL are widely abridged and the final solution is shown, showing why it is employed. The VCO block is a Current-Starved Ring Oscillator with a frequency range from 400MHz to 1.5GHz, with a 300μW to approximately 660μW power consumption. The divider is composed by six TSPC D Flip-Flop in series, forming a divide-by-64 divider. The Phase-Detector is a Dual D Flip-Flop detector with a charge pump. The PLL has less than a 2us lock time and presents a output oscillation of 1GHz, as expected. It also has a total power consumption of 1.3mW, therefore fulfilling all the specifications. The main contributions of this thesis are that this PLL can be applied in ISM applications due to its covering frequency range and low cost 130nm CMOS technology

Multi-Loop-Ring-Oscillator Design and Analysis for Sub-Micron CMOS

Ring oscillators provide a central role in timing circuits for today?s mobile devices and desktop computers. Increased integration in these devices exacerbates switching noise on the supply, necessitating improved supply resilience. Furthermore, reduced voltage headroom in submicron technologies limits the number of stacked transistors available in a delay cell. Hence, conventional single-loop oscillators offer relatively few design options to achieve desired specifications, such as supply rejection. Existing state-of-the-art supply-rejection- enhancement methods include actively regulating the supply with an LDO, employing a fully differential or current-starved delay cell, using a hi-Z voltage-to-current converter, or compensating/calibrating the delay cell. Multiloop ring oscillators (MROs) offer an additional solution because by employing a more complex ring-connection structure and associated delay cell, the designer obtains an additional degree of freedom to meet the desired specifications. Designing these more complex multiloop structures to start reliably and achieve the desired performance requires a systematic analysis procedure, which we attack on two fronts: (1) a generalized delay-cell viewpoint of the MRO structure to assist in both analysis and circuit layout, and (2) a survey of phase-noise analysis to provide a bank of methods to analyze MRO phase noise. We distill the salient phase-noise-analysis concepts/key equations previously developed to facilitate MRO and other non-conventional oscillator analysis. Furthermore, our proposed analysis framework demonstrates that all these methods boil down to obtaining three things: (1) noise modulation function (NMF), (2) noise transfer function (NTF), and (3) current-controlled-oscillator gain (KICO). As a case study, we detail the design, analysis, and measurement of a proposed multiloop ring oscillator structure that provides improved power-supply isolation (more than 20dB increase in supply rejection over a conventional-oscillator control case fabricated on the same test chip). Applying our general multi-loop-oscillator framework to this proposed MRO circuit leads both to design-oriented expressions for the oscillation frequency and supply rejection as well as to an efficient layout technique facilitating cross-coupling for improved quadrature accuracy and systematic, substantially simplified layout effort