Development of A 16:1 serializer for data transmission at 5 Gbps

Radiation tolerant, high speed and low power serializer ASIC is critical for optical link systems in particle physics experiments. Based on a commercial 0.25 μm silicon-onsapphire CMOS technology, we design a 16:1 serializer with 5 Gbps serial data rate. This ASIC has been submitted for fabrication. The post-layout simulation indicates the deterministic jitter is 54 ps (pk-pk) and random jitter is 3 ps (rms). The power consumption of the serializer is 500 mW. The design details and post layout simulation results are presented in this paper

Concepts for Short Range Millimeter-wave Miniaturized Radar Systems with Built-in Self-Test

This work explores short-range millimeter wave radar systems, with emphasis on miniaturization and overall system cost reduction. The designing and implementation processes, starting from the system level design considerations and characterization of the individual components to final implementation of the proposed architecture are described briefly. Several D-band radar systems are developed and their functionality and performances are demonstrated

Integrated radio frequency synthetizers for wireless applications

This thesis consists of six publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis concentrates on the design of phase-locked loop radio frequency synthesizers for wireless applications. In particular, the focus is on the implementation of the prescaler, the phase detector, and the chargepump. This work reviews the requirements set for the frequency synthesizer by the wireless standards, and how these requirements are derived from the system specifications. These requirements apply to both integer-N and fractional-N synthesizers. The work also introduces the special considerations related to the design of fractional-N phase-locked loops. Finally, implementation alternatives for the different building blocks of the synthesizer are reviewed. The presented work introduces new topologies for the phase detector and the chargepump, and improved topologies for high speed CMOS prescalers. The experimental results show that the presented topologies can be successfully used in both integer-N and fractional-N synthesizers with state-of-the-art performance. The last part of this work discusses the additional considerations that surface when the synthesizer is integrated into a larger system chip. It is shown experimentally that the synthesizer can be successfully integrated into a complex transceiver IC without sacrificing the performance of the synthesizer or the transceiver.reviewe

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Additively Manufactured RF Components, Packaging, Modules, and Flexible Modular Phased Arrays Enabling Widespread Massively Scalable mmWave/5G Applications

The 5G era is here and with it comes many challenges, particularily facing the high frequency mmWave adoption. This is because of the cost to implement such dense networks is much greater due to the high propagation losses of signals that range from 26 GHz to 40 GHz. Therefore there needs to be a way to utilize a method of fabrication that can change with the various environments that 5G will be deployed in, be it dense urban areas or suburban sprawl. In this research, the focus is on making these RF components utilized for 5G at low cost and modular with a focus on additive manufacturing. Since additive manufacturing is a rapid prototyping technique, the technology can be quickly adjusted and altered to meet certain specifications with negligible overhead. Several areas of research will be explored. Firstly, various RF passive components such as additively manufactured antennas and couplers with a combination hybrid inkjet and 3D printing will be discussed. Passive components are critical for evaluating the process of additive manufacturing for high frequency operation. Secondly, various structures will be evaluated specifically for packaging mmWave ICs, including interconnects, smart packaging and encapsulants for use in single or multichip modules. Thirdly, various antenna fabrication techniques will be explored which enables fully integrated ICs with antennas, called System on Antenna (SoA) which utilizes both inkjet and 3D printing to combine antennas and ICs into modules. These modules, can then be built into arrays in a modular fashion, allowing for large or smaller arrays to be assembled on the fly. Finally, a method of calibrating the arrays is introduced, utilizing inkjet printed sensors. This allows the sensor to actively detect bends and deformations in the array and restore optimal antenna array performance. Built for flexible phased arrays, the sensor is designed for implementation for ubiquitous use, meaning that its can be placed on any surface, which enables widespread use of 5G technologies.Ph.D

Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver

A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance

A programmable microsystem using system-on-chip for real-time biotelemetry

A telemetry microsystem, including multiple sensors, integrated instrumentation and a wireless interface has been implemented. We have employed a methodology akin to that for System-on-Chip microelectronics to design an integrated circuit instrument containing several "intellectual property" blocks that will enable convenient reuse of modules in future projects. The present system was optimized for low-power and included mixed-signal sensor circuits, a programmable digital system, a feedback clock control loop and RF circuits integrated on a 5 mm × 5 mm silicon chip using a 0.6 μm, 3.3 V CMOS process. Undesirable signal coupling between circuit components has been investigated and current injection into sensitive instrumentation nodes was minimized by careful floor-planning. The chip, the sensors, a magnetic induction-based transmitter and two silver oxide cells were packaged into a 36 mm × 12 mm capsule format. A base station was built in order to retrieve the data from the microsystem in real-time. The base station was designed to be adaptive and timing tolerant since the microsystem design was simplified to reduce power consumption and size. The telemetry system was found to have a packet error rate of 10<sup>-</sup><sup>3</sup> using an asynchronous simplex link. Trials in animal carcasses were carried out to show that the transmitter was as effective as a conventional RF device whilst consuming less power

Development of high speed integrated circuit for very high resolution timing measurements

A multi-channel high-precision low-power time-to-digital converter application specific integrated circuit for high energy physics applications has been designed and implemented in a 130 nm CMOS process. To reach a target resolution of 24.4 ps, a novel delay element has been conceived. This nominal resolution has been experimentally verified with a prototype, with a minimum resolution of 19 ps. To further improve the resolution, a new interpolation scheme has been described. The ASIC has been designed to use a reference clock with the LHC bunch crossing frequency of 40MHz and generate all required timing signals internally, to ease to use within the framework of an LHC upgrade. Special care has been taken to minimise the power consumption