HIGH PERFORMANCE CMOS WIDE-BAND RF FRONT-END WITH SUBTHRESHOLD OUT OF BAND SENSING

In future, the radar/satellite wireless communication devices must support multiple standards and should be designed in the form of system-on-chip (SoC) so that a significant reduction happen on cost, area, pins, and power etc. However, in such device, the design of a fully on-chip CMOS wideband receiver front-end that can process several radar/satellite signal simultaneously becomes a multifold complex problem. Further, the inherent high-power out-of-band (OB) blockers in radio spectrum will make the receiver more non-linear, even sometimes saturate the receiver. Therefore, the proper blocker rejection techniques need to be incorporated. The primary focus of this research work is the development of a CMOS high-performance low noise wideband receiver architecture with a subthreshold out of band sensing receiver. Further, the various reconfigurable mixer architectures are proposed for performance adaptability of a wideband receiver for incoming standards. Firstly, a high-performance low- noise bandwidthenhanced fully differential receiver is proposed. The receiver composed of a composite transistor pair noise canceled low noise amplifier (LNA), multi-gate-transistor (MGTR) trans-conductor amplifier, and passive switching quad followed by Tow Thomas bi-quad second order filter based tarns-impedance amplifier. An inductive degenerative technique with low-VT CMOS architecture in LNA helps to improve the bandwidth and noise figure of the receiver. The full receiver system is designed in UMC 65nm CMOS technology and measured. The packaged LNA provides a power gain 12dB (including buffer) with a 3dB bandwidth of 0.3G – 3G, noise figure of 1.8 dB having a power consumption of 18.75mW with an active area of 1.2mm*1mm. The measured receiver shows 37dB gain at 5MHz IF frequency with 1.85dB noise figure and IIP3 of +6dBm, occupies 2mm*1.2mm area with 44.5mW of power consumption. Secondly, a 3GHz-5GHz auxiliary subthreshold receiver is proposed to estimate the out of blocker power. As a redundant block in the system, the cost and power minimization of the auxiliary receiver are achieved via subthreshold circuit design techniques and implementing the design in higher technology node (180nm CMOS). The packaged auxiliary receiver gives a voltage gain of 20dB gain, the noise figure of 8.9dB noise figure, IIP3 of -10dBm and 2G-5GHz bandwidth with 3.02mW power consumption. As per the knowledge, the measured results of proposed main-high-performancereceiver and auxiliary-subthreshold-receiver are best in state of art design. Finally, the various viii reconfigurable mixers architectures are proposed to reconfigure the main-receiver performance according to the requirement of the selected communication standard. The down conversion mixers configurability are in the form of active/passive and Input (RF) and output (IF) bandwidth reconfigurability. All designs are simulated in 65nm CMOS technology. To validate the concept, the active/ passive reconfigurable mixer configuration is fabricated and measured. Measured result shows a conversion gain of 29.2 dB and 25.5 dB, noise figure of 7.7 dB and 10.2 dB, IIP3 of -11.9 dBm and 6.5 dBm in active and passive mode respectively. It consumes a power 9.24mW and 9.36mW in passive and active case with a bandwidth of 1 to 5.5 GHz and 0.5 to 5.1 GHz for active/passive case respectively

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

Towards the Design of Robust High-Speed and Power Efficient Short Reach Photonic Links

In 2014, approximately eight trillion transistors were fabricated every second thanks to improvements in integration density and fabrication processes. This increase in integration and functionality has also brought about the possibility of system on chip (SoC) and high-performance computing (HPC). Electrical interconnects presently dominate the very-short reach interconnect landscape (< 5 cm) in these applications. This, however, is expected to change. These interconnects' downfall will be caused by their need for impedance matching, limited pin-density and frequency dependent loss leading to intersymbol interference. In an attempt to solve this, researchers have increasingly explored integrated silicon photonics as it is compatible with current CMOS processes and creates many possibilities for short-reach applications. Many see optical interconnects as the high-speed link solution for applications ranging from intra-data center (~200 m) down to module or even chip scales (< 2 cm). The attractive properties of optical interconnects, such as low loss and multiplexing abilities, will enable such things as Exascale high-performance computers of the future (equal to 10^18 calculations per second). In fact, forecasts predict that by 2025 photonics at the smallest levels of the interconnect hierarchy will be a reality. This thesis presents three novel research projects, which all work towards increasing robustness and cost-efficiency in short-reach optical links. It discusses three parts of the optical link: the interconnect, the receiver and the photodiode. The first topic of this thesis is exploratory work on the use of an optical multiplexing technique, mode-division multiplexing (MDM), to carry multiple data lanes along with a forwarded clock for very short-reach applications. The second topic discussed is a novel reconfigurable CMOS receiver proposed as a method to map a clock signal to an interconnect lane in an MDM source-synchronous link with the lowest optical crosstalk. The receiver is designed as a method to make electronic chips that suit the needs of optical ones. By leveraging the more robust electronic integrated circuit, link solutions can be tuned to meet the needs of photonic chips on a die by die basis. The third topic of this thesis proposes a novel photodetector which uses photonic grating couplers to redirect vertical incident light to the horizontal direction. With this technique, the light is applied along the entire length of a p-n junction to improve the responsivity and speed of the device. Experimental results for this photodetector at 35 Gb/s are published, showing it to be the fastest all-silicon based photodetector reported in the literature at the time of publication

Low-Power Wake-Up Receivers

The Internet of Things (IoT) is leading the world to the Internet of Everything (IoE), where things, people, intelligent machines, data and processes will be connected together. The key to enter the era of the IoE lies in enormous sensor nodes being deployed in the massively expanding wireless sensor networks (WSNs). By the year of 2025, more than 42 billion IoT devices will be connected to the Internet. While the future IoE will bring priceless advantages for the life of mankind, one challenge limiting the nowadays IoT from further development is the ongoing power demand with the dramatically growing number of the wireless sensor nodes. To address the power consumption issue, this dissertation is motivated to investigate low-power wake-up receivers (WuRXs) which will significantly enhance the sustainability of the WSNs and the environmental awareness of the IoT. Two proof-of-concept low-power WuRXs with focuses on two different application scenarios have been proposed. The first WuRX, implemented in a cost-effective 180-nm CMOS semiconductor technology, operates at 401−406-MHz band. It is a good candidate for application scenarios, where both a high sensitivity and an ultra-low power consumption are in demand. Concrete use cases are, for instance, medical implantable applications or long-range communications in rural areas. This WuRX does not rely on a further assisting semiconductor technology, such as MEMS which is widely used in state-of-the-art WuRXs operating at similar frequencies. Thus, this WuRX is a promising solution to low-power low-cost IoT. The second WuRX, implemented in a 45-nm RFSOI CMOS technology, was researched for short-range communication applications, where high-density conventional IoT devices should be installed. By investigation of the WuRX for operation at higher frequency band from 5.5 GHz to 7.5 GHz, the nowadays ever more over-traffic issues that arise at low frequency bands such as 2.4 GHz can be substantially addressed. A systematic, analytical research route has been carried out in realization of the proposed WuRXs. The thesis begins with a thorough study of state-of-the-art WuRX architectures. By examining pros and cons of these architectures, two novel architectures are proposed for the WuRXs in accordance with their specific use cases. Thereon, key WuRX parameters are systematically analyzed and optimized; the performance of relevant circuits is modeled and simulated extensively. The knowledge gained through these investigations builds up a solid theoretical basis for the ongoing WuRX designs. Thereafter, the two WuRXs have been analytically researched, developed and optimized to achieve their highest performance. Proof-of-concept circuits for both the WuRXs have been fabricated and comprehensively characterized under laboratory conditions. Finally, measurement results have verified the feasibility of the design concept and the feasibility of both the WuRXs

LOW-POWER IMPULSE-RADIO ULTRA-WIDEBAND TECHNIQUES FOR BIOMEDICAL APPLICATIONS.

Ph.DDOCTOR OF PHILOSOPH

A built-in self-test technique for high speed analog-to-digital converters

Fundação para a Ciência e a Tecnologia (FCT) - PhD grant (SFRH/BD/62568/2009

Wideband Watt-Level Spatial Power-Combined Power Amplifier in SiGe BiCMOS Technology for Efficient mm-Wave Array Transmitters

The continued demand for high-speed wireless communications is driving the development of integrated high-power transmitters at millimeter wave (mm-Wave) frequencies. Si-based technologies allow achieving a high level of integration but usually provide insufficient generated RF power to compensate for the increased propagation and material losses at mm-Wave bands due to the relatively low breakdown voltage of their devices. This problem can be reduced significantly if one could combine the power of multiple active devices on each antenna element. However, conventional on-chip power combining networks have inherently high insertion losses reducing transmitter efficiency and limiting its maximum achievable output power.This work presents a non-conventional design approach for mm-Wave Si-based Watt-level power amplifiers that is based on novel power-combining architecture, where an array of parallel custom PA-cells suited on the same chip is interfaced to a single substrate integrated waveguide (to be a part of an antenna element). This allows one to directly excite TEm0 waveguide modes with high power through spatial power combining functionality, obviating the need for intermediate and potentially lossy on-chip power combiners. The proposed solution offers wide impedance bandwidth (50%) and low insertion losses (0.4 dB), which are virtually independent from the number of interfaced PA-cells. The work evaluates the scalability bounds of the architecture as well as discusses the critical effects of coupled non-identical PA-cells, which are efficiently reduced by employing on-chip isolation load resistors.The proposed architecture has been demonstrated through an example of the combined PA with four differential cascode PA-cells suited on the same chip, which is flip-chip interconnected to the combiner placed on a laminate. This design is implemented in a 0.25 um SiGe BiCMOS technology. The PA-cell has a wideband performance (38.6%) with both high peak efficiency (30%) and high saturated output power (24.9 dBm), which is the highest reported output power level obtained without the use of circuit-level power combining in Si-based technologies at Ka-band. In order to achieve the optimal system-level performance of the combined PA, an EM-circuit-thermal optimization flow has been proposed, which accounts for various multiphysics effects occurring in the joint structure. The final PA achieves the peak PAE of 26.7% in combination with 30.8 dBm maximum saturated output power, which is the highest achievable output power in practical applications, where the 50-Ohms load is placed on a laminate. The high efficiency (&gt;20%) and output power (&gt;29.8 dBm) over a wide frequency range (30%) exceed the state-of-the-art in Si-based PAs

Development of an Encrypted Wireless System for Body Sensor Network Applications

Wireless body area networks (WBAN), also called wireless body sensor networks (WBSN), consist of a collection of wireless sensor nodes used to monitor and assess various human physiological conditions, which can then be used by healthcare professionals to help them make important healthcare decisions. They can be used to prevent disease, help diagnosis a disease, or manage the symptoms of a disease. An extremely important aspect of WBAN is security to protect a patient\u27s healthcare information, as a hacker could potentially cause fatal harm. Current security measures are implemented in software at the MAC layer and higher, not in the physical layer. Previous research demonstrated a chaotic encryption cipher to add a layer of security in the physical layer. This cipher exploits different properties of the Lorenz chaotic system to encrypt and decrypt digital data. Decryption involved synchronizing two chaotic signals to recover original data by sharing a state between the transmitter and receiver. In this thesis, we further develop the encryption system by implementing wireless capabilities. We use two approaches: the first by using commercially available wireless microcontrollers that communicate using Bluetooth Low Energy, and the second by the design and fabrication of a dual-band low noise amplifier (LNA) that can be used in a receiver for WBANs collecting data from implantable and on-the-body sensors. For the first approach, a custom Bluetooth Low Energy profile was created for streaming the analog encrypted signal, and signal processing was done at the receiver side. For the second approach, the LNA operates at the Medical Implant Communication System (MICS) band and the 915 MHz Industrial, Scientific, and Medical (ISM) band simultaneously through dual-band input and output matching networks

Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d