Reliable Low-Power High Performance Spintronic Memories

Moores Gesetz folgend, ist es der Chipindustrie in den letzten fünf Jahrzehnten gelungen, ein explosionsartiges Wachstum zu erreichen. Dies hatte ebenso einen exponentiellen Anstieg der Nachfrage von Speicherkomponenten zur Folge, was wiederum zu speicherlastigen Chips in den heutigen Computersystemen führt. Allerdings stellen traditionelle on-Chip Speichertech- nologien wie Static Random Access Memories (SRAMs), Dynamic Random Access Memories (DRAMs) und Flip-Flops eine Herausforderung in Bezug auf Skalierbarkeit, Verlustleistung und Zuverlässigkeit dar. Eben jene Herausforderungen und die überwältigende Nachfrage nach höherer Performanz und Integrationsdichte des on-Chip Speichers motivieren Forscher, nach neuen nichtflüchtigen Speichertechnologien zu suchen. Aufkommende spintronische Spe- ichertechnologien wie Spin Orbit Torque (SOT) und Spin Transfer Torque (STT) erhielten in den letzten Jahren eine hohe Aufmerksamkeit, da sie eine Reihe an Vorteilen bieten. Dazu gehören Nichtflüchtigkeit, Skalierbarkeit, hohe Beständigkeit, CMOS Kompatibilität und Unan- fälligkeit gegenüber Soft-Errors. In der Spintronik repräsentiert der Spin eines Elektrons dessen Information. Das Datum wird durch die Höhe des Widerstandes gespeichert, welche sich durch das Anlegen eines polarisierten Stroms an das Speichermedium verändern lässt. Das Prob- lem der statischen Leistung gehen die Speichergeräte sowohl durch deren verlustleistungsfreie Eigenschaft, als auch durch ihr Standard- Aus/Sofort-Ein Verhalten an. Nichtsdestotrotz sind noch andere Probleme, wie die hohe Zugriffslatenz und die Energieaufnahme zu lösen, bevor sie eine verbreitete Anwendung finden können. Um diesen Problemen gerecht zu werden, sind neue Computerparadigmen, -architekturen und -entwurfsphilosophien notwendig. Die hohe Zugriffslatenz der Spintroniktechnologie ist auf eine vergleichsweise lange Schalt- dauer zurückzuführen, welche die von konventionellem SRAM übersteigt. Des Weiteren ist auf Grund des stochastischen Schaltvorgangs der Speicherzelle und des Einflusses der Prozessvari- ation ein nicht zu vernachlässigender Zeitraum dafür erforderlich. In diesem Zeitraum wird ein konstanter Schreibstrom durch die Bitzelle geleitet, um den Schaltvorgang zu gewährleisten. Dieser Vorgang verursacht eine hohe Energieaufnahme. Für die Leseoperation wird gleicher- maßen ein beachtliches Zeitfenster benötigt, ebenfalls bedingt durch den Einfluss der Prozess- variation. Dem gegenüber stehen diverse Zuverlässigkeitsprobleme. Dazu gehören unter An- derem die Leseintereferenz und andere Degenerationspobleme, wie das des Time Dependent Di- electric Breakdowns (TDDB). Diese Zuverlässigkeitsprobleme sind wiederum auf die benötigten längeren Schaltzeiten zurückzuführen, welche in der Folge auch einen über längere Zeit an- liegenden Lese- bzw. Schreibstrom implizieren. Es ist daher notwendig, sowohl die Energie, als auch die Latenz zur Steigerung der Zuverlässigkeit zu reduzieren, um daraus einen potenziellen Kandidaten für ein on-Chip Speichersystem zu machen. In dieser Dissertation werden wir Entwurfsstrategien vorstellen, welche das Ziel verfolgen, die Herausforderungen des Cache-, Register- und Flip-Flop-Entwurfs anzugehen. Dies erre- ichen wir unter Zuhilfenahme eines Cross-Layer Ansatzes. Für Caches entwickelten wir ver- schiedene Ansätze auf Schaltkreisebene, welche sowohl auf der Speicherarchitekturebene, als auch auf der Systemebene in Bezug auf Energieaufnahme, Performanzsteigerung und Zuver- lässigkeitverbesserung evaluiert werden. Wir entwickeln eine Selbstabschalttechnik, sowohl für die Lese-, als auch die Schreiboperation von Caches. Diese ist in der Lage, den Abschluss der entsprechenden Operation dynamisch zu ermitteln. Nachdem der Abschluss erkannt wurde, wird die Lese- bzw. Schreiboperation sofort gestoppt, um Energie zu sparen. Zusätzlich limitiert die Selbstabschalttechnik die Dauer des Stromflusses durch die Speicherzelle, was wiederum das Auftreten von TDDB und Leseinterferenz bei Schreib- bzw. Leseoperationen re- duziert. Zur Verbesserung der Schreiblatenz heben wir den Schreibstrom an der Bitzelle an, um den magnetischen Schaltprozess zu beschleunigen. Um registerbankspezifische Anforderungen zu berücksichtigen, haben wir zusätzlich eine Multiport-Speicherarchitektur entworfen, welche eine einzigartige Eigenschaft der SOT-Zelle ausnutzt, um simultan Lese- und Schreiboperatio- nen auszuführen. Es ist daher möglich Lese/Schreib- Konfilkte auf Bitzellen-Ebene zu lösen, was sich wiederum in einer sehr viel einfacheren Multiport- Registerbankarchitektur nieder- schlägt. Zusätzlich zu den Speicheransätzen haben wir ebenfalls zwei Flip-Flop-Architekturen vorgestellt. Die erste ist eine nichtflüchtige non-Shadow Flip-Flop-Architektur, welche die Speicherzelle als aktive Komponente nutzt. Dies ermöglicht das sofortige An- und Ausschalten der Versorgungss- pannung und ist daher besonders gut für aggressives Powergating geeignet. Alles in Allem zeigt der vorgestellte Flip-Flop-Entwurf eine ähnliche Timing-Charakteristik wie die konventioneller CMOS Flip-Flops auf. Jedoch erlaubt er zur selben Zeit eine signifikante Reduktion der statis- chen Leistungsaufnahme im Vergleich zu nichtflüchtigen Shadow- Flip-Flops. Die zweite ist eine fehlertolerante Flip-Flop-Architektur, welche sich unanfällig gegenüber diversen Defekten und Fehlern verhält. Die Leistungsfähigkeit aller vorgestellten Techniken wird durch ausführliche Simulationen auf Schaltkreisebene verdeutlicht, welche weiter durch detaillierte Evaluationen auf Systemebene untermauert werden. Im Allgemeinen konnten wir verschiedene Techniken en- twickeln, die erhebliche Verbesserungen in Bezug auf Performanz, Energie und Zuverlässigkeit von spintronischen on-Chip Speichern, wie Caches, Register und Flip-Flops erreichen

Circuit design for embedded memory in low-power integrated circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.Cataloged from PDF version of thesis.Includes bibliographical references (p. 141-152).This thesis explores the challenges for integrating embedded static random access memory (SRAM) and non-volatile memory-based on ferroelectric capacitor technology-into lowpower integrated circuits. First considered is the impact of process variation in deep-submicron technologies on SRAM, which must exhibit higher density and performance at increased levels of integration with every new semiconductor generation. Techniques to speed up the statistical analysis of physical memory designs by a factor of 100 to 10,000 relative to the conventional Monte Carlo Method are developed. The proposed methods build upon the Importance Sampling simulation algorithm and efficiently explore the sample space of transistor parameter fluctuation. Process variation in SRAM at low-voltage is further investigated experimentally with a 512kb 8T SRAM test chip in 45nm SOI CMOS technology. For active operation, an AC coupled sense amplifier and regenerative global bitline scheme are designed to operate at the limit of on current and off current separation on a single-ended SRAM bitline. The SRAM operates from 1.2 V down to 0.57 V with access times from 400ps to 3.4ns. For standby power, a data retention voltage sensor predicts the mismatch-limited minimum supply voltage without corrupting the contents of the memory. The leakage power of SRAM forces the chip designer to seek non-volatile memory in applications such as portable electronics that retain significant quantities of data over long durations. In this scenario, the energy cost of accessing data must be minimized. This thesis presents a ferroelectric random access memory (FRAM) prototype that addresses the challenges of sensing diminishingly small charge under conditions favorable to low access energy with a time-to-digital sensing scheme. The 1 Mb IT1C FRAM fabricated in 130 nm CMOS operates from 1.5 V to 1.0 V with corresponding access energy from 19.2 pJ to 9.8 pJ per bit. Finally, the computational state of sequential elements interspersed in CMOS logic, also restricts the ability to power gate. To enable simple and fast turn-on, ferroelectric capacitors are integrated into the design of a standard cell register, whose non-volatile operation is made compatible with the digital design flow. A test-case circuit containing ferroelectric registers exhibits non-volatile operation and consumes less than 1.3 pJ per bit of state information and less than 10 clock cycles to save or restore with no minimum standby power requirement in-between active periods.by Masood Qazi.Ph.D

Asynchronous techniques for new generation variation-tolerant FPGA

PhD ThesisThis thesis presents a practical scenario for asynchronous logic implementation that would benefit the modern Field-Programmable Gate Arrays (FPGAs) technology in improving reliability. A method based on Asynchronously-Assisted Logic (AAL) blocks is proposed here in order to provide the right degree of variation tolerance, preserve as much of the traditional FPGAs structure as possible, and make use of asynchrony only when necessary or beneficial for functionality. The newly proposed AAL introduces extra underlying hard-blocks that support asynchronous interaction only when needed and at minimum overhead. This has the potential to avoid the obstacles to the progress of asynchronous designs, particularly in terms of area and power overheads. The proposed approach provides a solution that is complementary to existing variation tolerance techniques such as the late-binding technique, but improves the reliability of the system as well as reducing the design’s margin headroom when implemented on programmable logic devices (PLDs) or FPGAs. The proposed method suggests the deployment of configurable AAL blocks to reinforce only the variation-critical paths (VCPs) with the help of variation maps, rather than re-mapping and re-routing. The layout level results for this method's worst case increase in the CLB’s overall size only of 6.3%. The proposed strategy retains the structure of the global interconnect resources that occupy the lion’s share of the modern FPGA’s soft fabric, and yet permits the dual-rail iv completion-detection (DR-CD) protocol without the need to globally double the interconnect resources. Simulation results of global and interconnect voltage variations demonstrate the robustness of the method

Enhancing Real-time Embedded Image Processing Robustness on Reconfigurable Devices for Critical Applications

Nowadays, image processing is increasingly used in several application fields, such as biomedical, aerospace, or automotive. Within these fields, image processing is used to serve both non-critical and critical tasks. As example, in automotive, cameras are becoming key sensors in increasing car safety, driving assistance and driving comfort. They have been employed for infotainment (non-critical), as well as for some driver assistance tasks (critical), such as Forward Collision Avoidance, Intelligent Speed Control, or Pedestrian Detection. The complexity of these algorithms brings a challenge in real-time image processing systems, requiring high computing capacity, usually not available in processors for embedded systems. Hardware acceleration is therefore crucial, and devices such as Field Programmable Gate Arrays (FPGAs) best fit the growing demand of computational capabilities. These devices can assist embedded processors by significantly speeding-up computationally intensive software algorithms. Moreover, critical applications introduce strict requirements not only from the real-time constraints, but also from the device reliability and algorithm robustness points of view. Technology scaling is highlighting reliability problems related to aging phenomena, and to the increasing sensitivity of digital devices to external radiation events that can cause transient or even permanent faults. These faults can lead to wrong information processed or, in the worst case, to a dangerous system failure. In this context, the reconfigurable nature of FPGA devices can be exploited to increase the system reliability and robustness by leveraging Dynamic Partial Reconfiguration features. The research work presented in this thesis focuses on the development of techniques for implementing efficient and robust real-time embedded image processing hardware accelerators and systems for mission-critical applications. Three main challenges have been faced and will be discussed, along with proposed solutions, throughout the thesis: (i) achieving real-time performances, (ii) enhancing algorithm robustness, and (iii) increasing overall system's dependability. In order to ensure real-time performances, efficient FPGA-based hardware accelerators implementing selected image processing algorithms have been developed. Functionalities offered by the target technology, and algorithm's characteristics have been constantly taken into account while designing such accelerators, in order to efficiently tailor algorithm's operations to available hardware resources. On the other hand, the key idea for increasing image processing algorithms' robustness is to introduce self-adaptivity features at algorithm level, in order to maintain constant, or improve, the quality of results for a wide range of input conditions, that are not always fully predictable at design-time (e.g., noise level variations). This has been accomplished by measuring at run-time some characteristics of the input images, and then tuning the algorithm parameters based on such estimations. Dynamic reconfiguration features of modern reconfigurable FPGA have been extensively exploited in order to integrate run-time adaptivity into the designed hardware accelerators. Tools and methodologies have been also developed in order to increase the overall system dependability during reconfiguration processes, thus providing safe run-time adaptation mechanisms. In addition, taking into account the target technology and the environments in which the developed hardware accelerators and systems may be employed, dependability issues have been analyzed, leading to the development of a platform for quickly assessing the reliability and characterizing the behavior of hardware accelerators implemented on reconfigurable FPGAs when they are affected by such faults

Semiconductor Memory Applications in Radiation Environment, Hardware Security and Machine Learning System

abstract: Semiconductor memory is a key component of the computing systems. Beyond the conventional memory and data storage applications, in this dissertation, both mainstream and eNVM memory technologies are explored for radiation environment, hardware security system and machine learning applications. In the radiation environment, e.g. aerospace, the memory devices face different energetic particles. The strike of these energetic particles can generate electron-hole pairs (directly or indirectly) as they pass through the semiconductor device, resulting in photo-induced current, and may change the memory state. First, the trend of radiation effects of the mainstream memory technologies with technology node scaling is reviewed. Then, single event effects of the oxide based resistive switching random memory (RRAM), one of eNVM technologies, is investigated from the circuit-level to the system level. Physical Unclonable Function (PUF) has been widely investigated as a promising hardware security primitive, which employs the inherent randomness in a physical system (e.g. the intrinsic semiconductor manufacturing variability). In the dissertation, two RRAM-based PUF implementations are proposed for cryptographic key generation (weak PUF) and device authentication (strong PUF), respectively. The performance of the RRAM PUFs are evaluated with experiment and simulation. The impact of non-ideal circuit effects on the performance of the PUFs is also investigated and optimization strategies are proposed to solve the non-ideal effects. Besides, the security resistance against modeling and machine learning attacks is analyzed as well. Deep neural networks (DNNs) have shown remarkable improvements in various intelligent applications such as image classification, speech classification and object localization and detection. Increasing efforts have been devoted to develop hardware accelerators. In this dissertation, two types of compute-in-memory (CIM) based hardware accelerator designs with SRAM and eNVM technologies are proposed for two binary neural networks, i.e. hybrid BNN (HBNN) and XNOR-BNN, respectively, which are explored for the hardware resource-limited platforms, e.g. edge devices.. These designs feature with high the throughput, scalability, low latency and high energy efficiency. Finally, we have successfully taped-out and validated the proposed designs with SRAM technology in TSMC 65 nm. Overall, this dissertation paves the paths for memory technologies’ new applications towards the secure and energy-efficient artificial intelligence system.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Self-healing concepts involving fine-grained redundancy for electronic systems

The start of the digital revolution came through the metal-oxide-semiconductor field-effect transistor (MOSFET) in 1959 followed by massive integration onto a silicon die by means of constant down scaling of individual components. Digital systems for certain applications require fault-tolerance against faults caused by temporary or permanent influence. The most widely used technique is triple module redundancy (TMR) in conjunction with a majority voter, which is regarded as a passive fault mitigation strategy. Design by functional resilience has been applied to circuit structures for increased fault-tolerance and towards self-diagnostic triggered self-healing. The focus of this thesis is therefore to develop new design strategies for fault detection and mitigation within transistor, gate and cell design levels. The research described in this thesis makes three contributions. The first contribution is based on adding fine-grained transistor level redundancy to logic gates in order to accomplish stuck-at fault-tolerance. The objective is to realise maximum fault-masking for a logic gate with minimal added redundant transistors. In the case of non-maskable stuck-at faults, the gate structure generates an intrinsic indication signal that is suitable for autonomous self-healing functions. As a result, logic circuitry utilising this design is now able to differentiate between gate faults and faults occurring in inter-gate connections. This distinction between fault-types can then be used for triggering selective self-healing responses. The second contribution is a logic matrix element which applies the three core redundancy concepts of spatial- temporal- and data-redundancy. This logic structure is composed of quad-modular redundant structures and is capable of selective fault-masking and localisation depending of fault-type at the cell level, which is referred to as a spatiotemporal quadded logic cell (QLC) structure. This QLC structure has the capability of cellular self-healing. Through the combination of fault-tolerant and masking logic features the QLC is designed with a fault-behaviour that is equal to existing quadded logic designs using only 33.3% of the equivalent transistor resources. The inherent self-diagnosing feature of QLC is capable of identifying individual faulty cells and can trigger self-healing features. The final contribution is focused on the conversion of finite state machines (FSM) into memory to achieve better state transition timing, minimal memory utilisation and fault protection compared to common FSM designs. A novel implementation based on content-addressable type memory (CAM) is used to achieve this. The FSM is further enhanced by creating the design out of logic gates of the first contribution by achieving stuck-at fault resilience. Applying cross-data parity checking, the FSM becomes equipped with single bit fault detection and correction

Nouvelles Architectures Hybrides (Logique / Mémoires Non-Volatiles et technologies associées.)

Les nouvelles approches de technologies mémoires permettront une intégration dite back-end, où les cellules élémentaires de stockage seront fabriquées lors des dernières étapes de réalisation à grande échelle du circuit. Ces approches innovantes sont souvent basées sur l'utilisation de matériaux actifs présentant deux états de résistance distincts. Le passage d'un état à l'autre est contrôlé en courant ou en tension donnant lieu à une caractéristique I-V hystérétique. Nos mémoires résistives sont composées d'argent en métal électrochimiquement actif et de sulfure amorphe agissant comme électrolyte. Leur fonctionnement repose sur la formation réversible et la dissolution d'un filament conducteur. Le potentiel d'application de ces nouveaux dispositifs n'est pas limité aux mémoires ultra-haute densité mais aussi aux circuits embarqués. En empilant ces mémoires dans la troisième dimension au niveau des interconnections des circuits logiques CMOS, de nouvelles architectures hybrides et innovantes deviennent possibles. Il serait alors envisageable d'exploiter un fonctionnement à basse énergie, à haute vitesse d'écriture/lecture et de haute performance telles que l'endurance et la rétention. Dans cette thèse, en se concentrant sur les aspects de la technologie de mémoire en vue de développer de nouvelles architectures, l'introduction d'une fonctionnalité non-volatile au niveau logique est démontrée par trois circuits hybrides: commutateurs de routage non volatiles dans un Field Programmable Gate Arrays, un 6T-SRAM non volatile, et les neurones stochastiques pour un réseau neuronal. Pour améliorer les solutions existantes, les limitations de la performances des dispositifs mémoires sont identifiés et résolus avec des nouveaux empilements ou en fournissant des défauts de circuits tolérants.Novel approaches in the field of memory technology should enable backend integration, where individual storage nodes will be fabricated during the last fabrication steps of the VLSI circuit. In this case, memory operation is often based upon the use of active materials with resistive switching properties. A topology of resistive memory consists of silver as electrochemically active metal and amorphous sulfide acting as electrolyte and relies on the reversible formation and dissolution of a conductive filament. The application potential of these new memories is not limited to stand-alone (ultra-high density), but is also suitable for embedded applications. By stacking these memories in the third dimension at the interconnection level of CMOS logic, new ultra-scalable hybrid architectures becomes possible which exploit low energy operation, fast write/read access and high performance with respect to endurance and retention. In this thesis, focusing on memory technology aspects in view of developing new architectures, the introduction of non-volatile functionality at the logic level is demonstrated through three hybrid (CMOS logic ReRAM devices) circuits: nonvolatile routing switches in a Field Programmable Gate Array, nonvolatile 6T-SRAMs, and stochastic neurons of an hardware neural network. To be competitive or even improve existing solutions, limitations on the memory devices performances are identified and solved by stack engineering of CBRAM devices or providing faults tolerant circuits.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Energy-Efficient System Architectures for Intermittently-Powered IoT Devices

Various industry forecasts project that, by 2020, there will be around 50 billion devices connected to the Internet of Things (IoT), helping to engineer new solutions to societal-scale problems such as healthcare, energy conservation, transportation, etc. Most of these devices will be wireless due to the expense, inconvenience, or in some cases, the sheer infeasibility of wiring them. With no cord for power and limited space for a battery, powering these devices for operating in a set-and-forget mode (i.e., achieve several months to possibly years of unattended operation) becomes a daunting challenge. Environmental energy harvesting (where the system powers itself using energy that it scavenges from its operating environment) has been shown to be a promising and viable option for powering these IoT devices. However, ambient energy sources (such as vibration, wind, RF signals) are often minuscule, unreliable, and intermittent in nature, which can lead to frequent intervals of power loss. Performing computations reliably in the face of such power supply interruptions is challenging