Noise Characterization and Filtering in the MicroBooNE Liquid Argon TPC

The low-noise operation of readout electronics in a liquid argon time projection chamber (LArTPC) is critical to properly extract the distribution of ionization charge deposited on the wire planes of the TPC, especially for the induction planes. This paper describes the characteristics and mitigation of the observed noise in the MicroBooNE detector. The MicroBooNE's single-phase LArTPC comprises two induction planes and one collection sense wire plane with a total of 8256 wires. Current induced on each TPC wire is amplified and shaped by custom low-power, low-noise ASICs immersed in the liquid argon. The digitization of the signal waveform occurs outside the cryostat. Using data from the first year of MicroBooNE operations, several excess noise sources in the TPC were identified and mitigated. The residual equivalent noise charge (ENC) after noise filtering varies with wire length and is found to be below 400 electrons for the longest wires (4.7 m). The response is consistent with the cold electronics design expectations and is found to be stable with time and uniform over the functioning channels. This noise level is significantly lower than previous experiments utilizing warm front-end electronics.Comment: 36 pages, 20 figure

A high aspect ratio Fin-Ion Sensitive Field Effect Transistor: compromises towards better electrochemical bio-sensing

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturisation with the expectation of improving sensitivity and response time, but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high heigth to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterised their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, stablishing an advantage in total signal and linearity for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimisation of reliability and efficiency in terms of limits of detection, for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.Comment: Article submitted to Nano Letter

Low-Frequency Noise Phenomena in Switched MOSFETs

In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, the authors review the limitations of current compact noise models which do not model such single-electron effects. The authors present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley-Read-Hall statistics to explain the behavior. Finally, the authors treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applie

Highly-sensitive superconducting quantum interference proximity transistor

We report the design and implementation of a high-performance superconducting quantum interference proximity transistor (SQUIPT) based on aluminum-copper (Al-Cu) technology. With the adoption of a thin and short copper nanowire we demostrate full phase-driven modulation of the proximity-induced minigap in the normal metal density of states. Under optimal bias we record unprecedently high flux-to-voltage (up to 3 mV/$\Phi_0$) and flux-to-current (exceeding 100 nA/$\Phi_0$) transfer function values at sub-Kelvin temperatures, where $\Phi_0$ is the flux quantum. The best magnetic flux resolution (as low as 500 n$\Phi_0/\sqrt{Hz}$ at 240 mK, being limited by the room temperature pre-amplification stage) is reached under fixed current bias. These figures of merit combined with ultra-low power dissipation and micrometer-size dimensions make this mesoscopic interferometer attractive for low-temperature applications such as the investigation of the magnetization of small spin populations.Comment: 7 pages, 5 color figure

An efficient approach to noise analysis through multidimensional physics-based models

IEEE TRANS. EL. DEV

Full Counting Statistics of Interacting Electrons

In order to fully characterize the noise associated with electron transport, with its severe consequences for solid-state quantum information systems, the theory of full counting statistics has been developed. It accounts for correlation effects associated with the statistics and effects of entanglement, but it remains a non-trivial task to account for interaction effects. In this article we present two examples: we describe electron transport through quantum dots with strong charging effects beyond perturbation theory in the tunneling, and we analyze current fluctuations in a diffusive interacting conductor.Comment: To be published in special issue of "Fortschritte der Physik" (ed. by Wolfgang Schleich

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Feedback cooling of a nanomechanical resonator

Cooled, low-loss nanomechanical resonators offer the prospect of directly observing the quantum dynamics of mesoscopic systems. However, the present state of the art requires cooling down to the milliKelvin regime in order to observe quantum effects. Here we present an active feedback strategy based on continuous observation of the resonator position for the purpose of obtaining these low temperatures. In addition, we apply this to an experimentally realizable configuration, where the position monitoring is carried out by a single-electron transistor. Our estimates indicate that with current technology this technique is likely to bring the required low temperatures within reach.Comment: 10 pages, RevTex4, 4 color eps figure