131 research outputs found
Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P \delta-layers
We report low-frequency 1/f noise measurements of degenerately doped Si:P
\delta-layers at 4.2K. The noise was found to be over six orders of magnitude
lower than that of bulk Si:P systems in the metallic regime and is one of the
lowest values reported for doped semiconductors. The noise was found to be
nearly independent of magnetic field at low fields, indicating negligible
contribution from universal conductance fluctuations. Instead interaction of
electrons with very few active structural two-level systems may explain the
observed noise magnitudeComment: 4 pages, 4 figure
Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
The 'double Dirac cone' 2D topological interface states found on the (001)
faces of topological crystalline insulators such as PbSnSe
feature degeneracies located away from time reversal invariant momenta, and are
a manifestation of both mirror symmetry protection and valley interactions.
Similar shifted degeneracies in 1D interface states have been highlighted as a
potential basis for a topological transistor, but realizing such a device will
require a detailed understanding of the intervalley physics involved. In
addition, the operation of this or similar devices outside of ultra-high vacuum
will require encapsulation, and the consequences of this for the topological
interface state must be understood. Here we address both topics for the case of
2D surface states using angle-resolved photoemission spectroscopy. We examine
bulk PbSnSe(001) crystals overgrown with PbSe, realizing
trivial/topological heterostructures. We demonstrate that the valley
interaction that splits the two Dirac cones at each is extremely
sensitive to atomic-scale details of the surface, exhibiting non-monotonic
changes as PbSe deposition proceeds. This includes an apparent total collapse
of the splitting for sub-monolayer coverage, eliminating the Lifshitz
transition. For a large overlayer thickness we observe quantized PbSe states,
possibly reflecting a symmetry confinement mechanism at the buried topological
interface
Disentangling Electron-Boson Interactions on the Surface of a Familiar Ferromagnet
We report energy renormalizations from electron-phonon and electron-magnon
interactions in spin minority surface resonances on Ni(111). The different
interactions are disentangled and quantified in strength , based on
the characteristic shapes of their complex self-energies, and the largely
different binding energies at which they occur. The observed electron-magnon
interactions reveal a strong dependence on momentum and energy band position in
the bulk Brillouin zone. In contrast, electron-phonon interactions from the
same bands are observed to be practically momentum- and symmetry-independent.
Additionally, a moderately strong () electron-phonon interaction
is observed from a `buried', near-parabolic spin majority band that does not
cross the Fermi level.Comment: QuSpin 202
Bottom-Up Growth of Monolayer Honeycomb SiC
The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While sp2 bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstrate large-area, bottom-up synthesis of monocrystalline, epitaxial monolayer honeycomb SiC atop ultrathin transition metal carbide films on SiC substrates. We find the 2D phase of SiC to be almost planar and stable at high temperatures, up to 1200 \ub0C in vacuum. Interactions between the 2D-SiC and the transition metal carbide surface result in a Dirac-like feature in the electronic band structure, which in the case of a TaC substrate is strongly spin-split. Our findings represent the first step towards routine and tailored synthesis of 2D-SiC monolayers, and this novel heteroepitaxial system may find diverse applications ranging from photovoltaics to topological superconductivity
The sub-band structure of atomically sharp dopant profiles in silicon
This work was partly supported by the Research Council of Norway through its Centres of Excellence funding scheme, Project Number 262633, ‘QuSpin’, and through the Fripro program, Project Numbers 250985 ‘FunTopoMat’, 262339 ‘NEAT’, and by the Villum Fonden through the Centre of Excellence for Dirac Materials (Grant No. 11744). J.A.M. acknowledges funding support from the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grant No. DFF-6108-00409) and the Aarhus University Research Foundation. P.D.C.K. acknowledges financial support from The Royal Society.The downscaling of silicon-based structures and proto-devices has now reached the single-atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic-scale device fabrication is the so-called Si:P δ-layer, consisting of an ultra-dense and sharp layer of dopants within a semiconductor host. Whilst several alternatives exist, it is on the Si:P platform that many quantum proto-devices have been successfully demonstrated. Motivated by this, both calculations and experiments have been dedicated to understanding the electronic structure of the Si:P δ-layer platform. In this work, we use high-resolution angle-resolved photoemission spectroscopy to reveal the structure of the electronic states which exist because of the high dopant density of the Si:P δ-layer. In contrast to published theoretical work, we resolve three distinct bands, the most occupied of which shows a large anisotropy and significant deviation from simple parabolic behaviour. We investigate the possible origins of this fine structure, and conclude that it is primarily a consequence of the dielectric constant being large (ca. double that of bulk Si). Incorporating this factor into tight-binding calculations leads to a major revision of band structure; specifically, the existence of a third band, the separation of the bands, and the departure from purely parabolic behaviour. This new understanding of the band structure has important implications for quantum proto-devices which are built on the Si:P δ-layer platform.Publisher PDFPeer reviewe
One-dimensional confinement and width-dependent bandgap formation in epitaxial graphene nanoribbons
The ability to define an off state in logic electronics is the key ingredient that is impossible to fulfill using a conventional pristine graphene layer, due to the absence of an electronic bandgap. For years, this property has been the missing element for incorporating graphene into next-generation field effect transistors. In this work, we grow high-quality armchair graphene nanoribbons on the sidewalls of 6H-SiC mesa structures. Angle-resolved photoelectron spectroscopy (ARPES) and scanning tunneling spectroscopy measurements reveal the development of a width-dependent semiconducting gap driven by quantum confinement effects. Furthermore, ARPES demonstrates an ideal one-dimensional electronic behavior that is realized in a graphene-based environment, consisting of well-resolved subbands, dispersing and non-dispersing along and across the ribbons respectively. Our experimental findings, coupled with theoretical tight-binding calculations, set the grounds for a deeper exploration of quantum confinement phenomena and may open intriguing avenues for new low-power electronics. © 2020, The Author(s)
Origin of the π -band replicas in the electronic structure of graphene grown on 4H -SiC(0001)
The calculated electronic band structure of graphene is relatively simple, with a Fermi surface consisting only of six Dirac cones in the first Brillouin zone-one at each (K) over bar. In contrast, angle-resolved photoemission measurements of graphene grown on SiC(0001) often show six satellite Dirac cones surrounding each primary Dirac cone. Recent studies have reported two further Dirac cones along the (Gamma) over bar-(K) over bar line, and argue that these are not photoelectron diffraction artifacts but real bands deriving from a modulation of the ionic potential in the graphene layer. Here we present measurements using linearly polarized synchrotron light which show all of these replicas as well as several additional ones. Using information obtained from dark corridor orientations and angular warping, we demonstrate that all but one of these additional features-including those previously assigned as real initial-state bands-are possible to explain by simple final-state photoelectron diffraction
Spectroscopic Evidence for a Three-Dimensional Charge Density Wave in Kagome Superconductor CsVSb
The recently discovered AV3Sb5 (A=K, Rb, Cs) family, possessing V kagome
nets, has received considerable attention due to the topological electronic
structure and intriguing correlated phenomena, including an exotic charge
density wave (CDW) and superconductivity. Detailed electronic structure studies
are essential to unravel the characteristics and origin of the CDW as well as
its interplay with superconductivity. Here, we present angle-resolved
photoemission spectroscopy (ARPES) measurements for CsV3Sb5 at multiple
temperatures and photon energies to reveal the nature of the CDW from an
electronic structure perspective. We present evidence for a three-dimensional
(3D) CDW order. In the process we also pinpoint a surface state attributed to a
Cs terminated surface. This state was previously attributed to band folding
band due to a CDW along the c direction or a quantum well state from quantum
confinement. The CDW expected 2-fold lattice reconstruction along c axis is
observed to be a quadrupling of the unit cell, thus for the first time directly
demonstrating the 3D nature of the CDW from the electronic structure
perspective. Moreover, this 3D CDW configuration originates from two distinct
types of distortions in adjacent kagome layers. These present results not only
provide key insights into the nature of the unconventional CDW in CsV3Sb5 but
also provides an important reference for further studies on the relationship
between the CDW and superconductivity.Comment: 19 pages, 4 figure
Designing a water leasing market for the Mimbres River, New Mexico.
The objective of this study is to develop a conceptual framework for establishing water leasing markets in New Mexico using the Mimbres River as a test case. Given the past and growing stress over water in New Mexico and the Mimbres River in particular, this work will develop a mechanism for the short term, efficient, temporary transfer of water from one user to another while avoiding adverse effects on any user not directly involved in the transaction (i.e., third party effects). Toward establishing a water leasing market, five basic tasks were performed, (1) a series of stakeholder meetings were conducted to identify and address concerns and interests of basin residents, (2) several gauges were installed on irrigation ditches to aid in the monitoring and management of water resources in the basin, (3) the hydrologic/market model and decision support interface was extended to include the Middle and Lower reaches of the Mimbres River, (4) experiments were conducted to aid in design of the water leasing market, and (5) a set of rules governing a water leasing market was drafted for future adoption by basin residents and the New Mexico Office of the State Engineer
What future/s for outdoor and environmental education in a world that has contended with COVID-19?
This is an unusual article in that it brings together the perspectives of many on this journal’s editorial board, around the issue of contending with COVID-19. Twenty statements showcase a range of thoughts and experiences, highlighting the differences and similarities in the way the pandemic is impacting on the educational practice of outdoor and environmental education. The future is not yet written, of course, so it is worth thinking about how the current moment may impact on the months and years to come. The aim of this article is to influence and support such thinking
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