Kontaktzonen, Dritte Räume und empathische Orte: Zur gesellschaftlichen Verantwortung von Museen

Museen sind öffentliche Orte des gesellschaftlichen Diskurses. Ansätze der Partizipation und Inklusion haben zu einer Neupositionierung der Museen geführt. Als Kontaktzonen und dritte Räume werden sie vermehrt als empathische Orte des Austauschs, Dialogs und der Konfrontation verstanden.Museums are public spaces of social discourse. Concepts of participation and inclusion have redefined the role of museums. As contact zones and third spaces they are increasingly understood as empathic places of exchange, dialogue and confrontation

CIX - A Detector for Spectral Enhanced X-ray Imaging by Simultaneous Counting and Integrating

A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different direct converting sensor materials (CdZnTe and CdTe) bump bonded to its 8x8 pixel matrix. Photon counting devices give excellent results for low to medium X-ray fluxes but saturate at high rates while charge integration allows the detection of very high fluxes but is limited at low rates by the finite signal to noise ratio. The combination of both signal processing concepts therefore extends the resolvable dynamic range of the X-ray detector. In addition, for a large region of the dynamic range, where counter and integrator operate simultaneously, the mean energy of the detected X-ray spectrum can be calculated. This spectral information can be used to enhance the contrast of the X-ray image. The advantages of the counting and integrating signal processing concept and the performance of the imaging system will be reviewed. The properties of the system with respect to dynamic range and sensor response will be discussed and examples of imaging with additional spectral information will be presented.Comment: 12 pages, 14 figures, SPIE Medical Imaging Conference, San Diego, 200

Counting and integrating readout for direct conversion X-ray imaging: Concept, realization and first prototype measurements

A novel signal processing concept for X-ray imaging with directly converting pixelated semiconductor sensors is presented. The novelty of this approach compared to existing concepts is the combination of charge integration and photon counting in every single pixel. Simultaneous operation of both signal processing chains extends the dynamic range beyond the limits of the individual schemes and allows determination of the mean photon energy. Medical applications such as X-ray computed tomography can benefit from this additional spectral information through improved contrast and the ability to determine the hardening of the tube spectrum due to attenuation by the scanned object. A prototype chip in 0.35-micrometer technology has been successfully tested. The pixel electronics are designed using a low-swing differential current mode logic. Key element is a configurable feedback circuit for the charge sensitive amplifier which provides continuous reset, leakage current compensation and replicates the input signal for the integrator. This paper will discuss measurement results of the prototype structures and give details on the circuit design

Analysis of lead oxide (PbO) layers for direct conversion X-ray detection

Lead oxide (PbO) is a candidate direct conversion material for medical X-ray applications. We produced various samples and detectors with thick PbO layers. X-ray performance data such as dark current, charge generation yield and temporal behavior were evaluated on small samples. The influence of the metal contacts was studied in detail. We also covered large a-Si thin-film transistor (TFT)-plates with PbO. Imaging results from a large detector with an active area of 18 cm × 20 cm are presented. The detector has 960 × 1080 pixels with a pixel pitch of 184 ?m. The modulation transfer function at the Nyquist frequency of 2.72 linepairs/mm is 50%. Finally, a full size X-ray image is presented

Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been recently demonstrated with excellent avalanche gains; the latter is expected to lead to a number of novel imaging device applications that would be quantum noise limited. While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. The advantages of APS based x-ray imagers are also discussed with examples