Statistical Properties of Interacting Bose Gases in Quasi-2D Harmonic Traps

The analytical probability distribution of the quasi-2D (and purely 2D) ideal and interacting Bose gas are investigated by using a canonical ensemble approach. Using the analytical probability distribution of the condensate, the statistical properties such as the mean occupation number and particle number fluctuations of the condensate are calculated. Researches show that there is a continuous crossover of the statistical properties from a quasi-2D to a purely 2D ideal or interacting gases. Different from the case of a 3D Bose gas, the interaction between atoms changes in a deep way the nature of the particle number fluctuations.Comment: RevTex, 10pages, 4 figures, E-mail: [email protected]

Vertex-magic Labeling of Trees and Forests

A vertex-magic total labeling of a graph G(V,E) is a one-to-one map λ from E ∪ V onto the integers {1, 2, . . . , |E| + |V|} such that λ(x) + Σ λ(xy) where the sum is over all vertices y adjacent to x, is a constant, independent of the choice of vertex x. In this paper we examine the existence of vertex-magic total labelings of trees and forests. The situation is quite different from the conjectured behavior of edge-magic total labelings of these graphs. We pay special attention to the case of so-called galaxies, forests in which every component tree is a star

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices

1H NMR of Deep Eutectic Solvents

Deep Eutectic Solvents (DESs) form between a variety of quaternary ammonium or phosphonium salts and hydrogen-bond donors. Over the past decade, DESs have been studied as green solvents with potential applications in industrial processes, chemical extractions, and pharmaceuticals. The recent suggestion that many plants produce natural deep eutectic solvents (NADES) from primary metabolites led to investigation of the potential uses of DESs in biophysics research. This study examined the 1H NMR spectra of the choline chloride:urea 1:2, and choline chloride:ethylene glycol 1:3 molar ratio DES. Spectra of the choline chloride:urea 1:2 with various solutes were acquired to see what effect these solutes had on the DESs NMR spectrum. For both DESs tested, the NMR spectra were a superposition of the spectra of the components. DES-solute spectra showed that interaction between components persisted, indicating the solvent properties of the DESs were not lost upon addition of solutes

Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

The impact of the stress in room temperature inductively coupled plasma chemical vapour deposited (ICP-CVD) SiN x surface passivation layers on off-state drain ( I DS-off) and gate leakage currents ( I GS) in AlGaN/GaN high electron mobility transistors (HEMTs) is reported. I DS-off and I GS in 2 μm gate length devices were reduced by up to four orders of magnitude to ∼10 pA/mm using a compressively stressed bilayer SiN x passivation scheme. In addition, I on/ I off of ∼10 11 and subthreshold slope of 68 mV/dec were obtained using this strain engineered surface passivation approach

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating voltage and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics.This work was carried out with the support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/NO17927/1 and EP/J003603/1. R. Oliver acknowledges funding from the European Research Council under the European Community's Seventh Framework Programme (FP7/2007-2013) ERC grant agreement number 279361 (MACONS) and the from the Royal Academy of Engineers/Leverhulme Trust senior research fellowship

GPs' use of problem solving therapy for depression: a qualitative study of barriers to and enablers of evidence based care

BACKGROUND: Depression is a major health concern, predominantly treated by general practitioners (GPs). Problem solving therapy (PST) is recognised as an effective treatment for depression that is not widely used by GPs. This research aims to explore barriers and enablers that may influence GPs use of this treatment. METHOD: Qualitative methodology was used including individual and focus group interviews of GPs, PST experts and consumers. Analysis was undertaken using the Theory of Planned Behaviour (TPB) as a framework. RESULTS: A spectrum of potential influences, on GPs' use of PST emerged. Both barriers and enablers were identified. PST was perceived as being close to current practice approaches and potentially beneficial to both doctor and patient. In addition to a broadly positive attitude to PST, expressed by those with previous experience of its use, potential solutions to perceived barriers emerged. By contrast some GPs expressed fear that the use of PST would result in loss of doctor control of consultations and associated potential adverse patient outcomes. Patient expectations, which emerged as not always coinciding with GPs' perception of those expectations, were identified as a potential influence on GPs' decision concerning adoption of PST. In addition specific factors, including GP skill and confidence, consultation time constraints and technical issues related to PST were noted as potential concerns. CONCLUSION: This research contributes to our knowledge of the factors that may influence GPs' decisions regarding use of PST as a treatment for depression. It recognises both barriers and enablers. It suggests that for many GPs, PST is viewed in a positive light, providing encouragement to those seeking to increase the provision of PST by GPs. In identifying a number of potential barriers, along with associated options to address many of these barriers, it provides insights which may assist in the planning of GP training in PST

High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications

Novel MMIC spiral inductors on GaN-on-low-resistivity silicon (LR-Si) substrates ( σ<40 Ω⋅cm ) are demonstrated with enhanced self-resonance frequency ( fSRF ) and Q -factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q -factor enhancement of 57% ( Q=22 at 24 GHz) and maximum fSRF of 59 GHz was achieved because of the extra 5- μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications

A quantum mechanical description of the experiment on the observation of gravitationally bound states

Quantum states in the Earth's gravitational field were observed, when ultra-cold neutrons fall under gravity. The experimental results can be described by the quantum mechanical scattering model as it is presented here. We also discuss other geometries of the experimental setup which correspond to the absence or the reversion of gravity. Since our quantum mechanical model describes, particularly, the experimentally realized situation of reversed gravity quantitatively, we can practically rule out alternative explanations of the quantum states in terms of pure confinement effects.Comment: LaTeX, 10 pages, 4 figures, v2: references adde