Evaluation of Silicon Selective Epitaxial Growth Defects using the Sidewall Gate Controlled Diode

Selective Epitaxial Growth (SEG) of silicon has shown great potential for advanced integrated circuit technologies. Before SEG can be fully utilized, sidewall defects must be reduced or at least controlled. The phenomena responsible for these defects were not understood, therefore more quantification of the sidewall defects is necessary. Walled diodes have been used to measure the sidewall leakage currents, but are susceptible to problems which make them poor devices for comparing different sidewall interfaces. A new device structure, the Sidewall Gate Controlled Diode (SGCD), is presented for the quantification of the defects near the SEG sidewall. The SGCD is shown to have advantages over the use of walled diodes despite the complex fabrication process required to build it. The development of the fabrication process for this device and the verification of its useful operation are presented. After the operation of the SGCD was verified, the device was used to evaluate the effects of various SEG deposition parameters on the sidewall defect density. This study determined that lower temperature, slower growth rate depositions followed with an in-situ hydrogen anneal generally reduced the defect density. Inconsistencies in the results also indicated that the profile of the sidewall may also influence the defect density at the SEG/oxide sidewall

Polysilicon Emitter Fabrication and Modeling

The research proposed for 1986 was to develop the technology for fabricating, measuring, and computer modeling the polysilicon emitter bipolar transistor. Fabrication consisted of producing three types of bipolar transistors; a regular bipolar device to act as the control, a polysilicon contacted emitter transistor, and a polysilicon emitter directly on the base region with a very thin oxide at the interface. The proposed fabrication research concentrated on investigating a new method of fabricating polysilicon contacted emitter bipolar transistors. The new fabrication technique uses plasma etching of the emitter location on the base region and, without breaking vacuum, depositing amorphous silicon (a-Si) on the cleaned interface. The a-Si was then to be doped by ion-implantation and heated to 600-700 C ° to produce the polysilicon emitter contact. The controlled interface and the fine grained polysilicon should lead to more uniform and predictable betas for the polycontacted transistors. Both polysilicon contacted emitters and polysilicon emitters were to be investigated over a range of base doping. We proposed the modeling work in two directions: l) 2-D simulation so that small geometry transistors can be accurately modeled and 2) simulation of polysilicon contacted emitter transistors. Measurements on the devices described above will be used to develop a polysilicon model. The objective of this part of the project is to develop a numerical device simulator with predictive capability, i.e. one that can be used with confidence in place of actual device fabrication. The numerical device models will be provided to Delco and should find many applications in development and manufacturing. The fabrication highlights of the 1986 work were the design and fabrication of preliminary bipolar transistors and polysilicon emitters, the design and layout of the test wafer, and the fabrication and measurements on shallow arsenic doped emitter devices. There were 22 sets of fabrication runs made beyond the preliminary devices. The last results of these runs show that the shallow Arsenic emitter (0.05 /i) and the very narrow base width (0.1 y) control devices with metal emitter contact, have an average peak beta of about 75. Poly contacted emitter devices fabricated at the same time on the same wafer show a beta enhancement to 232, a factor of about 2.7 to 3.0 in the average peak beta. The polysilicon was deposited in a standard way in a LPCVD tube. We are presently fabricating polysilicon devices for studying the effects of the methods used in treating the surfaces before the poly is deposited and the way the poly is formed (amorphous PELPCYD)

Earth imaging results from Galileo's second encounter

The recent flyby of the Galileo spacecraft en route to Jupiter contributes a unique perspective to our view of our home planet. Imaging activities conducted during the second Earth encounter provide an important opportunity to assess new methods and approaches on familiar territory. These include unique multispectral observations, low light-level imaging (searches for aurorae, lightning and artificial lights on the nightside) and experiments with multiple exposure times to extend the effective radiometric resolution and dynamic range of the camera system. Galileo imaging data has the potential to make important contributions to terrestrial remote sensing. This is because the particular set of filters included in the Solid State Imaging system are not presently incorporated in any currently operating Earth-orbiting sensor system. The visible/near-infrared bandpasses of the SSI filters are well suited to remote sensing of geological, glaciological, botanical, and meteorological phenomena. Data from this and the previous Earth encounter may provide an extremely valuable reference point in time for comparison with similar data expected from EOS or other systems in the future, contributing directly to our knowledge of global change. The highest resolution imaging (0.2 km/pixel) during the December, 1992 encounter occurred over the central Andes; a five filter mosaic of visible and near infrared bands displays the remarkable spectral heterogeneity of this geologically diverse region. As Galileo departed the Earth, cooperative imaging with the Near Infrared Mapping Spectrometer (NIMS) instrument targeted Antarctica, Australia, and Indonesia at 1.0 to 2.5 km/pixel resolutions in the early morning local times near the terminator. The Antarctic data are of particular interest, potentially allowing ice grain size mapping using the 889 and 968 nm filters and providing an important means of calibrating the technique for application to the Galilean satellites. As the spacecraft receded further, regional scale imaging provided data which, along with data from the previous encounter, will enable the production of global multispectral mosaics of Earth in each of the SSI filters

Lunar impact basins: New data for the nearside northern high latitudes and eastern limb from the second Galileo flyby

During the December 1992 Galileo Earth/Moon encounter the northern half of the nearside, the eastern limb, and parts of the western farside of the Moon were illuminated and in view, a geometry that was complementary to the first lunar encounter in December, 1990, which obtained images of the western limb and eastern farside. The Galileo Solid State Imaging System (SSI) obtained multispectral images for these regions during the second encounter and color ratio composite images were compiled using combinations of band ratios chosen on the basis of telescopic spectra and laboratory spectra of lunar samples. Ratios of images taken at 0.41 and 0.76 micron are sensitive to changes in the slope in the visible portion of the spectrum, and ratios of 0.99 and 0.76 micron relate to the strength of near-infrared absorptions due to iron-rich mafic minerals (0.76/0.99 ratio) such as olivine and pyroxene. Results of the analyses of the compositional diversity of the crust, maria, and Copernican craters are presented elsewhere. Primary objectives for lunar basin analysis for the second encounter include analysis of: the north polar region and the Humboldtianum basin; the characteristics of the Imbrium basin along its northern border and the symmetry of associated deposits; the origin of light plains north of Mare Frigoris and associated with several other basins; the nature and significance of pre-basin substrate; the utilization of the stereo capability to assess subtle basis structure; the identification of previously unrecognized ancient basins; basin deposits and structure for limb and farside basins; and assessment of evidence for proposed ancient basins. These data and results will be applied to addressing general problems of evaluation of the nature and origin of basin deposits, investigation of mode of ejecta emplacement and ejecta mixing, analysis of the origin of light plains deposits, analysis of basin deposit symmetry/asymmetry, investigation of basin depth of excavation and crustal stratigraphy, and assessment of models for basin formation and evolution. Here we discuss some preliminary results concerning lunar impact basins, their deposits, and prebasin substrates, using the same approaches that we employed for the Orientale and South Pole-Aitken basins using the data from the first encounter

Canine Leptospirosis, United States, 2002–2004

The proportion of positive Leptospira microscopic agglutination tests for 23,005 dogs significantly increased from 2002 to 2004 (p<0.002) regardless of the positive cutoff titer used and was highest (p<0.05) for serovars Autumnalis and Grippotyphosa. The strongest positive serologic correlation (r = 0.72) was between serovars Autumnalis and Pomona

An Overview of the 2014 ALMA Long Baseline Campaign

A major goal of the Atacama Large Millimeter/submillimeter Array (ALMA) is to make accurate images with resolutions of tens of milliarcseconds, which at submillimeter (submm) wavelengths requires baselines up to ~15 km. To develop and test this capability, a Long Baseline Campaign (LBC) was carried out from September to late November 2014, culminating in end-to-end observations, calibrations, and imaging of selected Science Verification (SV) targets. This paper presents an overview of the campaign and its main results, including an investigation of the short-term coherence properties and systematic phase errors over the long baselines at the ALMA site, a summary of the SV targets and observations, and recommendations for science observing strategies at long baselines. Deep ALMA images of the quasar 3C138 at 97 and 241 GHz are also compared to VLA 43 GHz results, demonstrating an agreement at a level of a few percent. As a result of the extensive program of LBC testing, the highly successful SV imaging at long baselines achieved angular resolutions as fine as 19 mas at ~350 GHz. Observing with ALMA on baselines of up to 15 km is now possible, and opens up new parameter space for submm astronomy.Comment: 11 pages, 7 figures, 2 tables; accepted for publication in the Astrophysical Journal Letters; this version with small changes to affiliation