47 research outputs found
Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications
In this work multilevel pattering capabilities of Substrate Conformal Imprint
Lithography (SCIL) have been explored. A mix & match approach combining the
high throughput of nanoimprint lithography with the excellent overlay accuracy
of electron beam lithography (EBL) has been exploited to fabricate nanoscale
devices. An EBL system has also been utilized as a benchmarking tool to measure
both stamp distortions and alignment precision of this mix & match approach. By
aligning the EBL system to 20 mm x 20 mm and 8 mm x 8 mm cells to compensate
pattern distortions of order of over 6 inch wafer area, overlay
accuracy better than has been demonstrated. This result can
partially be attributed to the flexible SCIL stamp which compensates
deformations caused by the presence of particles which would otherwise
significantly reduce the alignment precision
A verified equivalent-circuit model for slotwaveguide modulators
We formulate and experimentally validate an equivalent-circuit model based on
distributed elements to describe the electric and electro-optic (EO) properties
of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The
model allows to reliably predict the small-signal EO frequency response of the
modulators exploiting purely electrical measurements of the frequency-dependent
RF transmission characteristics. We experimentally verify the validity of our
model, and we formulate design guidelines for an optimum trade-off between
optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and
{\pi}-voltage of SOH slot-waveguide modulators
A programmable, multi-format photonic transceiver platform enabling flexible optical networks
Development of programmable photonic devices for future flexible optical networks is ongoing. To this end, an innovative, multi-format QAM transmitter design is presented. It comprises a segmented-electrode InP IQ-MZM to be fabricated in InP, which can be directly driven by low-power CMOS logic. Arbitrary optical QAM format generation is made possible using only binary electrical signals, without the need for high-performance DACs and high-swing linear drivers. The concept enables a host of Tx-side DSP functionality, including the spectral shaping needed for Nyquist-WDM system concepts. In addition, we report on the development of an optical channel MUX/DEMUX, based on arrays of microresonator filters with reconfigurable bandwidths and center wavelengths. The device is intended for operation with multi-format flexible transceivers, enabling Dense (D)WDM superchannel aggregation and arbitrary spectral slicing in the context of a flexible grid environment
Verified equivalent-circuit model for slot-waveguide modulators
We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travelling-wave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and Ο-voltage of SOH slot-waveguide modulators
A verified equivalent-circuit model for slotwaveguide modulators
We formulate and experimentally validate an equivalent-circuit model based on
distributed elements to describe the electric and electro-optic (EO) properties
of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The
model allows to reliably predict the small-signal EO frequency response of the
modulators exploiting purely electrical measurements of the frequency-dependent
RF transmission characteristics. We experimentally verify the validity of our
model, and we formulate design guidelines for an optimum trade-off between
optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and
{\pi}-voltage of SOH slot-waveguide modulators
Π Π°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΠΌΠ΅ΡΠΎΠΏΡΠΈΡΡΠΈΠΉ Π΄Π»Ρ ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΈ Π±Π΅Π·ΠΎΠΏΠ°ΡΠ½ΠΎΡΡΠΈ ΡΠ°Π±ΠΎΡΡ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠΉ ΡΠ°ΡΡΠΈ ΡΡΠ°ΡΡΠΊΠ° ΠΌΠ°Π³ΠΈΡΡΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ Π³Π°Π·ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π° "Π‘ΠΈΠ»Π° Π‘ΠΈΠ±ΠΈΡΠΈ"
ΠΠ±ΡΠ΅ΠΊΡΠΎΠΌ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΡΠ²Π»ΡΠ΅ΡΡΡ ΡΡΠ°ΡΡΠΎΠΊ ΠΌΠ°Π³ΠΈΡΡΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ Π³Π°Π·ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π° "Π‘ΠΈΠ»Π° Π‘ΠΈΠ±ΠΈΡΠΈ". Π¦Π΅Π»Ρ ΡΠ°Π±ΠΎΡΡ β ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΠΌΠ΅ΡΠΎΠΏΡΠΈΡΡΠΈΠΉ Π΄Π»Ρ ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΈ Π±Π΅Π·ΠΎΠΏΠ°ΡΠ½ΠΎΡΡΠΈ ΡΠ°Π±ΠΎΡΡ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² Π»ΠΈΠ½Π΅ΠΉΠ½ΠΎΠΉ ΡΠ°ΡΡΠΈ ΠΌΠ°Π³ΠΈΡΡΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ Π³Π°Π·ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π° "Π‘ΠΈΠ»Π° Π‘ΠΈΠ±ΠΈΡΠΈ". Π ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΠ»ΠΈΡΡ ΡΠ°ΡΡΠ΅ΡΡ ΡΠΎΠ»ΡΠΈΠ½Ρ ΡΡΠ΅Π½ΠΊΠΈ ΡΡΡΠ±ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π°, ΡΠ°ΡΡΠ΅Ρ Π½Π° ΠΏΡΠΎΡΠ½ΠΎΡΡΡ ΠΈ ΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΡΡΡ, ΠΏΡΠΎΠ³Π½ΠΎΠ·Π½ΡΠΉ ΡΠ°ΡΡΠ΅Ρ ΡΠ°Π·ΠΌΡΠ²Π° Π³ΡΡΠ½ΡΠ° Π·Π°ΡΡΠΏΠΊΠΈ Π½Π° ΡΠΊΠ»ΠΎΠ½Π΅ Π½Π° ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΠΈ Π‘Π 36.13330.2012, Π‘Π 425.1325800.2018, Π° ΡΠ°ΠΊΠΆΠ΅ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ Π Π 51-2.4-007-97 ΠΊΠ°ΠΊ ΡΠΏΡΠ°Π²ΠΎΡΠ½ΠΎΠ³ΠΎ ΠΌΠ°ΡΠ΅ΡΠΈΠ°Π»Π°. Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Ρ Π²ΠΎΠΏΡΠΎΡΡ ΠΏΡΠΈΡΠΈΠ½ ΠΈ ΠΏΠΎΡΠ»Π΅Π΄ΡΡΠ²ΠΈΠΉ Π°Π²Π°ΡΠΈΠΉ Π½Π° ΠΌΠ°Π³ΠΈΡΡΡΠ°Π»ΡΠ½ΡΡ
Π³Π°Π·ΠΎΠΏΡΠΎΠ²ΠΎΠ΄Π°Ρ
(ΠΠ), Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΡ Π½Π° ΠΠ ΠΎΠΏΠ°ΡΠ½ΡΡ
Π³Π΅ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² (ΠΠΠ), ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½ΠΈΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΠ° ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΈ ΠΎΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΡ Π²ΡΠ±ΠΎΡΠ° ΠΌΠ΅ΡΠΎΠΏΡΠΈΡΡΠΈΠΉ ΠΈ ΡΠΎΠΎΡΡΠΆΠ΅Π½ΠΈΠΉ ΠΈΠ½ΠΆΠ΅Π½Π΅ΡΠ½ΠΎΠΉ Π·Π°ΡΠΈΡΡ ΠΠ ΠΎΡ ΡΡΠΎΠ·ΠΈΠΎΠ½Π½ΡΡ
ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ².The object of study is the section of the Power of Siberia gas pipeline. The purpose of the work is the development of measures to improve the efficiency and safety of the facilities of the linear part of the Power of Siberia gas pipeline. In the course of the study, calculations were made of the wall thickness of the pipeline, a calculation of strength and stability, a predictive calculation of erosion of backfill soil on the slope based on SP 36.13330.2012, SP 425.1325800.2018, and also using RD 51-2.4-007-97 as reference material. Issues of the causes and consequences of accidents on main gas pipelines (MG), the impact on MG of hazardous geological processes (GCP)
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN)
has attracted much attention as the active medium in memristive devices due to
its favorable physical properties, among others, a wide bandgap that enables a
large switching window. Metal filament formation is frequently suggested for
h-BN devices as the resistive switching (RS) mechanism, usually supported by
highly specialized methods like conductive atomic force microscopy (C-AFM) or
transmission electron microscopy (TEM). Here, we investigate the switching of
multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel
(Ni) electrodes through their current conduction mechanisms. Both the high and
the low resistance states are analyzed through temperature-dependent
current-voltage measurements. We propose the formation and retraction of nickel
filaments along boron defects in the h-BN film as the resistive switching
mechanism. We corroborate our electrical data with TEM analyses to establish
temperature-dependent current-voltage measurements as a valuable tool for the
analysis of resistive switching phenomena in memristors made of 2D materials.
Our memristors exhibit a wide and tunable current operation range and low
stand-by currents, in line with the state of the art in h-BN-based threshold
switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of
10.Comment: 39 page
Π‘Π΅ΠΌΠ΅ΠΉΠ½ΡΠΉ ΡΠΈΠΏ Π±ΡΡΠΈΡ Π² ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ ΡΡΠ»ΠΎΠ²ΠΈΡΡ : ΠΊΡΠΈΠ·ΠΈΡ ΠΈΠ»ΠΈ ΠΌΠΎΠ΄Π΅ΡΠ½ΠΈΠ·Π°ΡΠΈΡ
Surface modified silicon nanochannel for urea sensing
Silicon nanowires have been surface functionalized with the enzyme urease for
biosensor applications to detect and quantify urea concentration. The device is
nanofabricated from a silicon on insulator (SOI) wafer with a top down
lithography approach. The differential conductance of silicon nanowires can be
tuned for optimum performance using the source drain bias voltage, and is
sensitive to urea at low concentration. The experimental results show a linear
relationship between surface potential change and urea concentration in the
range of 0.1 to 0.68 mM. The sensitivity of our devices shows high
reproducibility with time and different measurement conditions. The nanowire
urea biosensor offers the possibility of high quality, reusable enzyme sensor
array integration with silicon based circuits.Comment: 5 pages, 6 figures, two-column format. Related papers can be found at
nano.bu.ed