Observation of vortex-nucleated magnetization reversal in individual ferromagnetic nanotubes

The reversal of a uniform axial magnetization in a ferromagnetic nanotube (FNT) has been predicted to nucleate and propagate through vortex domains forming at the ends. In dynamic cantilever magnetometry measurements of individual FNTs, we identify the entry of these vortices as a function of applied magnetic field and show that they mark the nucleation of magnetization reversal. We find that the entry field depends sensitively on the angle between the end surface of the FNT and the applied field. Micromagnetic simulations substantiate the experimental results and highlight the importance of the ends in determining the reversal process. The control over end vortex formation enabled by our findings is promising for the production of FNTs with tailored reversal properties.Comment: 20 pages, 13 figure

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the nonlinearity can be used to amplify a signal at a frequency close to the mechanical resonance of the nanowire oscillator. Up to 26 dB of amplitude gain are demonstrated in this way

Imaging magnetic vortex configurations in ferromagnetic nanotubes

We image the remnant magnetization configurations of CoFeB and permalloy nanotubes (NTs) using x-ray magnetic circular dichroism photo-emission electron microscopy. The images provide direct evidence for flux-closure configurations, including a global vortex state, in which magnetization points circumferentially around the NT axis. Furthermore, micromagnetic simulations predict and measurements confirm that vortex states can be programmed as the equilibrium remnant magnetization configurations by reducing the NT aspect ratio.Comment: 14 pages, 4 figures, link to supplementary informatio

Imaging stray magnetic field of individual ferromagnetic nanotubes

We use a scanning nanometer-scale superconducting quantum interference device to map the stray magnetic field produced by individual ferromagnetic nanotubes (FNTs) as a function of applied magnetic field. The images are taken as each FNT is led through magnetic reversal and are compared with micromagnetic simulations, which correspond to specific magnetization configurations. In magnetic fields applied perpendicular to the FNT long axis, their magnetization appears to reverse through vortex states, i.e.\ configurations with vortex end domains or -- in the case of a sufficiently short FNT -- with a single global vortex. Geometrical imperfections in the samples and the resulting distortion of idealized mangetization configurations influence the measured stray-field patterns.Comment: 14 pages, 4 figure

Magnetization reversal of an individual exchange biased permalloy nanotube

We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilever and positioned in order to optimally couple its stray flux into a Nb nanoSQUID. We are thus able to measure both the NT's volume magnetization by dynamic cantilever magnetometry and its stray flux using the nanoSQUID. We observe a training effect and temperature dependence in the magnetic hysteresis, suggesting an exchange bias. We find a low blocking temperature $T_B = 18 \pm 2$ K, indicating the presence of a thin antiferromagnetic native oxide, as confirmed by X-ray absorption spectroscopy on similar samples. Furthermore, we measure changes in the shape of the magnetic hysteresis as a function of temperature and increased training. These observations show that the presence of a thin exchange-coupled native oxide modifies the magnetization reversal process at low temperatures. Complementary information obtained via cantilever and nanoSQUID magnetometry allows us to conclude that, in the absence of exchange coupling, this reversal process is nucleated at the NT's ends and propagates along its length as predicted by theory.Comment: 8 pages, 4 figure

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. Here, we demonstrate how GaAs nanoscale membranes can be seamlessly integrated on silicon by controlling the density of nuclei in the initial stages of growth. We also correlate the absence or presence of defects with the existence of a single or multiple nucleation regime for the single membranes. Certain defects exhibit well-differentiated spectroscopic features that we identify with cathodoluminescence and micro-photoluminescence techniques. Overall, this work presents a new approach for the seamless integration of compound semiconductors on silicon

3D Ordering at the Liquid–Solid Polar Interface of Nanowires

The nature of the liquid–solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic thermodynamics, neglecting the atomistic nature of the liquid–solid interface. Here, experimental observations and molecular dynamics simulations are employed to identify the 3D nature of an atomic‐scale ordering of liquid Ga in contact with solid GaAs in a nanowire growth configuration. An interplay between the liquid ordering and the formation of a new bilayer is revealed, which, contrary to the established theories, suggests that the preference for a certain polarity and polytypism is influenced by the atomic structure of the interface. The conclusions of this work open new avenues for the understanding of crystal growth, as well as other processes and systems involving a liquid–solid interface

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. Polarity engineering provides an additional pathway to modulate the structural and optical properties of semiconductor nanowires. In this work, we demonstrate for the first time the growth of Ga-assisted GaAs nanowires with (111)A-polarity, with a yield of up to ∼50%. This goal is achieved by employing highly Ga-rich conditions which enable proper engineering of the energies of A and B-polar surfaces. We also show that A-polarity growth suppresses the stacking disorder along the growth axis. This results in improved optical properties, including the formation of AlGaAs quantum dots with two orders or magnitude higher brightness. Overall, this work provides new grounds for the engineering of nanowire growth directions, crystal quality and optical functionality

Patterns of language and auditory dysfunction in 6-year-old children with epilepsy

In a previous study we reported difficulty with expressive language and visuoperceptual ability in preschool children with epilepsy and otherwise normal development. The present study analysed speech and language dysfunction for each individual in relation to epilepsy variables, ear preference, and intelligence in these children and described their auditory function. Twenty 6-year-old children with epilepsy (14 females, 6 males; mean age 6:5 y, range 6 y–6 y 11 mo) and 30 reference children without epilepsy (18 females, 12 males; mean age 6:5 y, range 6 y–6 y 11 mo) were assessed for language and auditory ability. Low scores for the children with epilepsy were analysed with respect to speech-language domains, type of epilepsy, site of epileptiform activity, intelligence, and language laterality. Auditory attention, perception, discrimination, and ear preference were measured with a dichotic listening test, and group comparisons were performed. Children with left-sided partial epilepsy had extensive language dysfunction. Most children with partial epilepsy had phonological dysfunction. Language dysfunction was also found in children with generalized and unclassified epilepsies. The children with epilepsy performed significantly worse than the reference children in auditory attention, perception of vowels and discrimination of consonants for the right ear and had more left ear advantage for vowels, indicating undeveloped language laterality