243 research outputs found

    Time-resolved PhotoEmission Spectroscopy on a Metal/Ferroelectric Heterostructure

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    In thin film ferroelectric capacitor the chemical and electronic structure of the electrode/FE interface can play a crucial role in determining the kinetics of polarization switching. We investigate the electronic structure of a Pt/BaTiO3/SrTiO3:Nb capacitor using time-resolved photoemission spectroscopy. The chemical, electronic and depth sensitivity of core level photoemission is used to probe the transient response of different parts of the upper electrode/ferroelectric interface to voltage pulse induced polarization reversal. The linear response of the electronic structure agrees quantitatively with a simple RC circuit model. The non-linear response due to the polarization switch is demonstrated by the time-resolved response of the characteristic core levels of the electrode and the ferroelectric. Adjustment of the RC circuit model allows a first estimation of the Pt/BTO interface capacitance. The experiment shows the interface capacitance is at least 100 times higher than the bulk capacitance of the BTO film, in qualitative agreement with theoretical predictions from the literature.Comment: 7 pages, 10 figures. Submitted to Phys. Rev.

    Interface Electronic Structure in a Metal/Ferroelectric Heterostructure under Applied Bias

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    The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO3/Nb-doped SrTiO3, under in-situ bias voltage is investigated using X-Ray Photoelectron Spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface.Comment: 9 pages, 8 figures. Submitted to Phys. Rev.

    Formation of one-dimensional self-assembled silicon nanoribbons on Au(110)-(2x1)

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    We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. This superstructure corresponds to Si nanoribbons all oriented along the [-110] direction as revealed by LEED and scanning tunneling microscopy (STM). STM and high-resolution photoemission spectroscopy indicate that the nanoribbons are flat and predominantly 1.6 nm wide. In addition the silicon atoms show signatures of two chemical environments corresponding to the edge and center of the ribbons.Comment: Under publication in Applied Physics Letter

    Silicon Sheets By Redox Assisted Chemical Exfoliation

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    In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.Comment: Accepted in J. Phys.: Condens. Matte

    Multiple satellites in materials with complex plasmon spectra: From graphite to graphene

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    International audienceThe photoemission spectrum of graphite is still debated. To help resolve this issue, we present photoemission measurements at high photon energy and analyze the results using a Green's function approach that takes into account the full complexity of the loss spectrum. Our measured data show multiple satellite replicas. We demonstrate that these satellites are of intrinsic origin, enhanced by extrinsic losses. The dominating satellite is due to the π+σ plasmon of graphite, whereas the π plasmon creates a tail on the high-binding energy side of the quasiparticle peak. The interplay between the two plasmons leads to energy shifts, broadening, and additional peaks in the satellite spectrum. We also predict the spectral changes in the transition from graphite towards graphene

    High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)

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    International audienceThe van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)1/2 dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm2·V−1·s−1 at 4 K

    Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

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    International audienceStacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene

    Double-crowned 2D semiconductor nanoplatelets with bicolor power-tunable emission

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    Nanocrystals (NCs) are now established building blocks for optoelectronics and their use as down converters for large gamut displays has been their first mass market. NC integration relies on a combination of green and red NCs into a blend, which rises post-growth formulation issues. A careful engineering of the NCs may enable dual emissions from a single NC population which violates Kasha’s rule, which stipulates that emission should occur at the band edge. Thus, in addition to an attentive control of band alignment to obtain green and red signals, non-radiative decay paths also have to be carefully slowed down to enable emission away from the ground state. Here, we demonstrate that core/crown/crown 2D nanoplatelets (NPLs), made of CdSe/CdTe/CdSe, can combine a large volume and a type-II band alignment enabling simultaneously red and narrow green emissions. Moreover, we demonstrate that the ratio of the two emissions can be tuned by the incident power, which results in a saturation of the red emission due to non-radiative Auger recombination that affects this emission much stronger than the green one. Finally, we also show that dual-color, power tunable, emission can be obtained through an electrical excitation

    Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure

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    We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap 6 eV). These results demonstrate that, although only weak van der Waals interactionsare present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN
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