Geometry and transport in a model of two coupled quadratic nonlinear waveguides

This paper applies geometric methods developed to understand chaos and transport in Hamiltonian systems to the study of power distribution in nonlinear waveguide arrays. The specific case of two linearly coupled X(2) waveguides is modeled and analyzed in terms of transport and geometry in the phase space. This gives us a transport problem in the phase space resulting from the coupling of the two Hamiltonian systems for each waveguide. In particular, the effect of the presence of partial and complete barriers in the phase space on the transfer of intensity between the waveguides is studied, given a specific input and range of material properties. We show how these barriers break down as the coupling between the waveguides is increased and what the role of resonances in the phase space has in this. We also show how an increase in the coupling can lead to chaos and global transport and what effect this has on the intensity

Nonlinear electron transport in normally pinched-off quantum wire

Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet etching. At certain critical source-drain voltage the samples exhibited a step rise of the conductance. The differential conductance of the open wires was noticeably lower than e^2/h as far as only part of the source-drain voltage dropped between source contact and saddle-point of the potential relief along the wire. The latter limited the electron flow injected to the wire. At high enough source-drain voltages the decrease of the differential conductance due to the real space transfer of electrons from the wire in GaAs to the doped AlGaAs layer was found. In this regime the sign of differential magnetoconductance was changed with reversing the direction of the current in the wire or the magnetic field, whet the magnetic field lies in the heterostructure plane and is directed perpendicular to the current. The dependence of the differential conductance on the magnetic field and its direction indicated that the real space transfer events were mainly mediated by the interface scattering.Comment: LaTeX 2e (epl.cls) 6 pages, 3 figure

Parametric localized modes in quadratic nonlinear photonic structures

We analyze two-color spatially localized modes formed by parametrically coupled fundamental and second-harmonic fields excited at quadratic (or chi-2) nonlinear interfaces embedded into a linear layered structure --- a quasi-one-dimensional quadratic nonlinear photonic crystal. For a periodic lattice of nonlinear interfaces, we derive an effective discrete model for the amplitudes of the fundamental and second-harmonic waves at the interfaces (the so-called discrete chi-2 equations), and find, numerically and analytically, the spatially localized solutions --- discrete gap solitons. For a single nonlinear interface in a linear superlattice, we study the properties of two-color localized modes, and describe both similarities and differences with quadratic solitons in homogeneous media.Comment: 9 pages, 8 figure

Indication for the coexistence of closed orbit and quantum interferometer with the same cross section in the organic metal (ET)4(H3O)[Fe(C2O4)3].C6H4Cl2: Persistence of SdH oscillations above 30 K

Shubnikov-de Haas (SdH) and de Haas-van Alphen (dHvA) oscillations spectra of the quasi-two dimensional charge transfer salt $\beta$"-(ET)$_4$(H$_3$O)[Fe(C$_2$O$_4$)$_3$]$\cdot$C$_6$H$_4$Cl$_2$ have been investigated in pulsed magnetic fields up to 54 T. The data reveal three basic frequencies F$_a$, F$_b$ and F$_{b - a}$, which can be interpreted on the basis of three compensated closed orbits at low temperature. However a very weak thermal damping of the Fourier component F$_b$, with the highest amplitude, is evidenced for SdH spectra above about 6 K. As a result, magnetoresistance oscillations are observed at temperatures higher than 30 K. This feature, which is not observed for dHvA oscillations, is in line with quantum interference, pointing to a Fermi surface reconstruction in this compound.Comment: published in Eur. Phys. J. B 71 203 (2009

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics.Comment: 13 pages, 6 figure

GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. Here, we demonstrate how GaAs nanoscale membranes can be seamlessly integrated on silicon by controlling the density of nuclei in the initial stages of growth. We also correlate the absence or presence of defects with the existence of a single or multiple nucleation regime for the single membranes. Certain defects exhibit well-differentiated spectroscopic features that we identify with cathodoluminescence and micro-photoluminescence techniques. Overall, this work presents a new approach for the seamless integration of compound semiconductors on silicon