Energy Relaxation Rates in AlInN/AlN/GaN Heterostructures

Cataloged from PDF version of article.The two-dimensional (2D) electron energy relaxation in Al0.83In0.17N/AlN/GaN heterostructures has been investigated experimentally. Shubnikov-de Haas (SdH) effect measurements were employed in the investigations. The electron temperature (T (e)) of hot electrons was obtained from the lattice temperature (T (L)) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss are also compared with current theoretical models for power loss in 2D semiconductors. The power loss from the electrons was found to be proportional to (T (e) (3) - T (L) (3) ) for electron temperatures in the range 1.8 K < T (e) < 14 K, indicating that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. The effective mass and quantum lifetime of the 2D electrons have been determined from the temperature and magnetic field dependencies of the amplitude of SdH oscillations, respectively. The values obtained for quantum lifetime suggest that remote ionized impurity scattering is the dominant scattering mechanism in Al0.83In0.17N/AlN/GaN heterostructures

Determination of the LO phonon energy by using electronic and optical methods in AIGaN/GaN

Cataloged from PDF version of article.The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant

SiC substrate effects on electron transport in the epitaxial graphene layer

Cataloged from PDF version of article.Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one high-mobility carrier (3493 cm(2)/Vs at 300 K) and one low-mobility carrier (1115 cm(2)/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate

Complementary and alternative technique for the determination of electron effective mass: Quantum hall effect

The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at the AlN/GaN interface. The Hall resistance of two-dimensional electron gas has been found to be quantized at multiple integers of von Klitzing constant that refers to the integer quantum Hall effect. The experimental data have been used to determine the Fermi energy, carrier density, and effective mass two-dimensional electrons. The results are in agreement with those derived from the longitudinal magnetoresistance in the same structure. © 2016, National Institute of Optoelectronics. All rights reserved

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T e) of hot electrons was obtained from the lattice temperature (T L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T e &gt; 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al 0.25Ga 0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures. © 2012 Elsevier Ltd. All rights reserved

Search for the standard model Higgs boson in the H to ZZ to 2l 2nu channel in pp collisions at sqrt(s) = 7 TeV

A search for the standard model Higgs boson in the H to ZZ to 2l 2nu decay channel, where l = e or mu, in pp collisions at a center-of-mass energy of 7 TeV is presented. The data were collected at the LHC, with the CMS detector, and correspond to an integrated luminosity of 4.6 inverse femtobarns. No significant excess is observed above the background expectation, and upper limits are set on the Higgs boson production cross section. The presence of the standard model Higgs boson with a mass in the 270-440 GeV range is excluded at 95% confidence level.Comment: Submitted to JHE

Measurement of the t t-bar production cross section in the dilepton channel in pp collisions at sqrt(s) = 7 TeV

The t t-bar production cross section (sigma[t t-bar]) is measured in proton-proton collisions at sqrt(s) = 7 TeV in data collected by the CMS experiment, corresponding to an integrated luminosity of 2.3 inverse femtobarns. The measurement is performed in events with two leptons (electrons or muons) in the final state, at least two jets identified as jets originating from b quarks, and the presence of an imbalance in transverse momentum. The measured value of sigma[t t-bar] for a top-quark mass of 172.5 GeV is 161.9 +/- 2.5 (stat.) +5.1/-5.0 (syst.) +/- 3.6(lumi.) pb, consistent with the prediction of the standard model.Comment: Replaced with published version. Included journal reference and DO