3,461 research outputs found

    On Infinite Quon Statistics and "Ambiguous" Statistics

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    We critically examine a recent suggestion that "ambiguous" statistics is equivalent to infinite quon statistics and that it describes a dilute, nonrelativistics ideal gas of extremal black holes. We show that these two types of statistics are different and that the description of extremal black holes in terms of "ambiguous" statistics cannot be applied.Comment: Latex, 9 pages, no figures, to appear in Mod.Phys.Lett.

    Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

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    This research was funded by the European Union's Horizon 2020 research and innovation programme under grant agreement No. 857558, and the Ministry of Education, Science, and Technological Development of the Republic of Serbia under the project No. 43011.The possibility of using commercial p-channel power vertical double-diffused metal-oxidesemiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.European Commission 857558Ministry of Education, Science & Technological Development, Serbia 4301

    The Three Dimensional Flow Field at the Exit of an Axial-Flow Turbine Rotor

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    A systematic and comprehensive investigation was performed to provide detailed data on the three dimensional viscous flow phenomena downstream of a modem turbine rotor and to understand the flow physics such as origin, nature, development of wakes, secondary flow, and leakage flow. The experiment was carried out in the Axial Flow Turbine Research Facility (AFTRF) at Penn State, with velocity measurements taken with a 3-D LDV System. Two radial traverses at 1% and 10% of chord downstream of the rotor have been performed to identify the three-dimensional flow features at the exit of the rotor blade row. Sufficient spatial resolution was maintained to resolve blade wake, secondary flow, and tip leakage flow. The wake deficit is found to be substantial, especially at 1% of chord downstream of the rotor. At this location, negative axial velocity occurs near the tip, suggesting flow separation in the tip clearance region. Turbulence intensities peak in the wake region, and cross- correlations are mainly associated with the velocity gradient of the wake deficit. The radial velocities, both in the wake and in the endwall region, are found to be substantial. Two counter-rotating secondary flows are identified in the blade passage, with one occupying the half span close to the casino and the other occupying the half span close to the hub. The tip leakage flow is well restricted to 10% immersion from the blade tip. There are strong vorticity distributions associated with these secondary flows and tip leakage flow. The passage averaged data are in good agreement with design values

    Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments

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    Isothermal annealing experiments with switched gate bias have been performed to determine the properties of the latent interface-trap buildup during postirradiation annealing of metal-oxide-semiconductor transistors. It has been found that a bias-independent process occurs until the start of the latent interface-trap buildup. During the buildup itself, oxide-trap charge is not permanently neutralized, but is temporarily compensated. (C) 2000 American Institute of Physics. (DOI: 10.1063/1.1336159

    Localization Recall Precision (LRP): A New Performance Metric for Object Detection

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    Average precision (AP), the area under the recall-precision (RP) curve, is the standard performance measure for object detection. Despite its wide acceptance, it has a number of shortcomings, the most important of which are (i) the inability to distinguish very different RP curves, and (ii) the lack of directly measuring bounding box localization accuracy. In this paper, we propose 'Localization Recall Precision (LRP) Error', a new metric which we specifically designed for object detection. LRP Error is composed of three components related to localization, false negative (FN) rate and false positive (FP) rate. Based on LRP, we introduce the 'Optimal LRP', the minimum achievable LRP error representing the best achievable configuration of the detector in terms of recall-precision and the tightness of the boxes. In contrast to AP, which considers precisions over the entire recall domain, Optimal LRP determines the 'best' confidence score threshold for a class, which balances the trade-off between localization and recall-precision. In our experiments, we show that, for state-of-the-art object (SOTA) detectors, Optimal LRP provides richer and more discriminative information than AP. We also demonstrate that the best confidence score thresholds vary significantly among classes and detectors. Moreover, we present LRP results of a simple online video object detector which uses a SOTA still image object detector and show that the class-specific optimized thresholds increase the accuracy against the common approach of using a general threshold for all classes. At https://github.com/cancam/LRP we provide the source code that can compute LRP for the PASCAL VOC and MSCOCO datasets. Our source code can easily be adapted to other datasets as well.Comment: to appear in ECCV 201

    Radiation sensitive MOSFETs irradiated with various positive gate biases

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    This work was supported in part by the European Union's Horizon 2020 research and innovation programme under grant agreement No. 857558, and the Ministry of Education, Science and Technological Development of the Republic of Serbia, under the project No. 43011.The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, V-T , during irradiation with various positive gate biases showed the increase in V-T with gate bias. The threshold voltage shift, Delta V-T , during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on Delta V-T were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The Delta V-T shows the same changes as the threshold voltage component due to fixed states, Delta V-ft , while there is no change in the threshold voltage component due to switching traps, Delta V-st .European Union's Horizon 2020 research and innovation programme 857558Ministry of Education, Science & Technological Development, Serbia 4301

    Polar catastrophe and electronic reconstructions at the LaAlO3/SrTiO3 interface: evidence from optical second harmonic generation

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    The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer

    Atomically precise lateral modulation of a two-dimensional electron liquid in anatase TiO2 thin films

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    Engineering the electronic band structure of two-dimensional electron liquids (2DELs) confined at the surface or interface of transition metal oxides is key to unlocking their full potential. Here we describe a new approach to tailoring the electronic structure of an oxide surface 2DEL demonstrating the lateral modulation of electronic states with atomic scale precision on an unprecedented length scale comparable to the Fermi wavelength. To this end, we use pulsed laser deposition to grow anatase TiO2 films terminated by a (1 x 4) in-plane surface reconstruction. Employing photo-stimulated chemical surface doping we induce 2DELs with tunable carrier densities that are confined within a few TiO2 layers below the surface. Subsequent in-situ angle resolved photoemission experiments demonstrate that the (1 x 4) surface reconstruction provides a periodic lateral perturbation of the electron liquid. This causes strong backfolding of the electronic bands, opening of unidirectional gaps and a saddle point singularity in the density of states near the chemical potential

    GC-MS-based metabolomics for the detection of adulteration in oregano samples

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    Oregano is one of the most used culinary herb and it is often adulterated with cheaper plants. In this study, GC-MS was used for identification and quantification of metabolites from 104 samples of oregano (Origanum vulgare and O. onites) adulterated with olive (Olea europaea), venetian sumac (Cotinus coggygria) and myrtle (Myrtus communis) leaves, at five different concentration levels. The metabolomics profiles obtained after the two-step derivatization, involving methoxyamination and silanization, were subjected to multivariate data analysis to reveal markers of adulteration and to build the regression models on the basis of the oregano-to-adulterants mixing ratio. Orthogonal partial least squares enabled detection of oregano adulterations with olive, Venetian sumac and myrtle leaves. Sorbitol levels distinguished oregano samples adulterated with olive leaves, while shikimic and quinic acids were recognized as discrimination factor for adulteration of oregano with venetian sumac. Fructose and quinic acid levels correlated with oregano adulteration with myrtle. Orthogonal partial least squares discriminant analysis enabled discrimination of O. vulgare and O. onites samples, where catechollactate was found to be discriminating metabolite

    Brief report: how adolescents with ASD process social information in complex scenes. Combining evidence from eye movements and verbal descriptions

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    We investigated attention, encoding and processing of social aspects of complex photographic scenes. Twenty-four high-functioning adolescents (aged 11–16) with ASD and 24 typically developing matched control participants viewed and then described a series of scenes, each containing a person. Analyses of eye movements and verbal descriptions provided converging evidence that both groups displayed general interest in the person in each scene but the salience of the person was reduced for the ASD participants. Nevertheless, the verbal descriptions revealed that participants with ASD frequently processed the observed person’s emotion or mental state without prompting. They also often mentioned eye-gaze direction, and there was evidence from eye movements and verbal descriptions that gaze was followed accurately. The combination of evidence from eye movements and verbal descriptions provides a rich insight into the way stimuli are processed overall. The merits of using these methods within the same paradigm are discussed
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