Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se2 (CIGSe)-based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as- grown CIGSe surface. This approach has now been tested with high-quality lab- scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post-deposition annealing or light soaking

Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material

Electron-beam-induced current at absorber back surfaces of Cu (In,Ga) Se2 thin-film solar cells

The following article appeared in Journal of Applied Physics 115.1 (2014): 014504 and may be found at http://scitation.aip.org/content/aip/journal/jap/115/1/10.1063/1.4858393The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se2 (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minima with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.This work was supported in part by the BMU projects comCIGS and comCIGSII. R.C. acknowledges financial support from Spanish MINECO within the program Ramon y Cajal (RYC-2011-08521)

Orientation distribution mapping of polycrystalline materials by Raman microspectroscopy

Raman microspectroscopy provides the means to obtain local orientations on polycrystalline materials at the submicrometer level. The present work demonstrates how orientation-distribution maps composed of Raman intensity distributions can be acquired on large areas of several hundreds of square micrometers. A polycrystalline CuInSe(2) thin film was used as a model system. The orientation distributions are evidenced by corresponding measurements using electron backscatter diffraction (EBSD) on the same identical specimen positions. The quantitative, local orientation information obtained by means of EBSD was used to calculate the theoretical Raman intensities for specific grain orientations, which agree well with the experimental values. The presented approach establishes new horizons for Raman microspectroscopy as a tool for quantitative, microstructural analysis at submicrometer resolution

Retrospektive Evaluation eines Prognosemodells für die Bettenbelegung durch COVID-19-Patientinnen und -Patienten auf deutschen Intensivstationen

Während der COVID-19-Pandemie waren bundesweite Daten zu den Kapazitäten der Gesundheits-versorgung und Krankenhäuser eine wichtige Orientierungshilfe für ressourcenstrategische und politische Entscheidungen. Im vorliegenden Beitrag wird die Leistungsfähigkeit eines Prognosemodells für die Bettenbelegung durch COVID-19-Patienten und -Patientinnen auf deut-schen Intensivstationen am Beispiel der fünf „Kleeblatt“-Regionen Deutschlands (Nord, Ost, Süd, Süd-West, West) im Zeitraum vom 1.7.2021 bis zum 2.1.2023 retrospektiv evaluiert. Außerdem werden Zeiträume mit außergewöhnlichen Abweichungen von prognostizierten und tatsächlichen Werten visualisiert und diskutiert.Peer Reviewe