High-efficiency solar cells based on inversion layer emitters

In crystalline silicon (c-Si) solar cells based on p-type substrates, inversion layer emitters have been proposed as an alternative to high-temperature phosphorus diffusion. Dielectric film deposition at low temperature (≤400 ºC) is widely used for c-Si surface passivation and in this case emitters are induced by the positive fixed charge,Qf, at the c-Si/dielectric interface. In this work, we use 2-D simulations to explore solar cell structures with inversion layer emitters placed between local n+-emitters. The local diffusions could be defined by laser processing, resulting in potentially low-temperature processed structures. From simulation results, the low conductivity of inversion layer emitters obligates to short contact spacing and, hence, dense front grids and high shadow losses. However, placing the emitter at the back reduces these penalties, increasing the efficiency about 1% absolute. Furthermore, taking advantage of the fully metallized back surface, inversion layer emitters can be assisted by the workfunction difference between the c-Si substrate and the metal (typically aluminum) over the dielectric. As a result, the necessity of a high positive Qf value is relaxed.Postprint (published version

Effects of photon reabsorption phenomena in confocal micro-photoluminescence measurements in crystalline silicon

Confocal micro-photoluminescence (PL) spectroscopy has become a powerful characterization technique for studying novel photovoltaic (PV) materials and structures at the micrometer level. In this work, we present a comprehensive study about the effects and implications of photon reabsorption phenomena on confocal micro-PL measurements in crystalline silicon (c-Si), the workhorse material of the PV industry. First, supported by theoretical calculations, we show that the level of reabsorption is intrinsically linked to the selected experimental parameters, i.e., focusing lens, pinhole aperture, and excitation wavelength, as they define the spatial extension of the confocal detection volume, and therefore, the effective photon traveling distance before collection. Second, we also show that certain sample properties such as the reflectance and/or the surface recombination velocity can also have a relevant impact on reabsorption. Due to the direct relationship between the reabsorption level and the spectral line shape of the resulting PL emission signal, reabsorption phenomena play a paramount role in certain types of micro-PL measurements. This is demonstrated by means of two practical and current examples studied using confocal PL, namely, the estimation of doping densities in c-Si and the study of back-surface and/or back-contacted Si devices such as interdigitated back contact solar cells, where reabsorption processes should be taken into account for the proper interpretation and quantification of the obtained PL data.Peer ReviewedPostprint (published version

Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances

[EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of the emitting object is comparable to the wavelength of the emitted radiation. Here we show that a silicon microsphere (2-3 mu m in diameter) heated to around 800 degrees C yields a thermal emission spectrum consisting of pronounced peaks that are associated with Mie resonances. We experimentally demonstrate in the near-infrared the existence of modes with an ultrahigh quality factor, Q, of 400, which is substantially higher than values reported so far, and set a new benchmark in the field of thermal emission. Simulations predict that the thermal response of the microspheres is very fast, about 15 mu s. Additionally, the possibility of achieving light emission above the Planck limit at some frequency ranges is envisaged.This work was supported by several projects of the Spanish Ministry of Economy and Competitiveness (MINECO), Severo Ochoa program for Centers of Excellence (SEV-2016-0683), MAT2015-69669-PM, ENE2013-49984-EXP, ENE2015-74009-JIN (cofunded by the European Regional Development Fund), and of the Spanish Science, Innovation and Universities, PGC2018-099744-B-100. F.R.-M. thanks the financial contribution of MINECO through the program for young researchers support, TEC 2015 2015-74405-JIN. The authors greatly acknowledge the contribution of Prof. Francisco Meseguer for both the fruitful discussions and the revision of the manuscript, and Prof. Marie Louise McCarrey for careful proofreading of the manuscript.Fenollosa Esteve, R.; Ramiro-Manzano, F.; Garín Escrivá, M.; Alcubilla, R. (2019). Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances. ACS Photonics. 6(12):3174-3179. https://doi.org/10.1021/acsphotonics.9b01513S3174317961

Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet

Thin film transistors based on polyarylamine poly(N,N′-diphenyl-N,N′bis(4-hexylphenyl)-[1,1′biphenyl]-4,4′-diamine (pTPD) were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold [email protected] [email protected]

Influence of laser wavelength on Laser-Fired contacts for crystalline silicon solar cells

In the Laser-Fired Contact (LFC) process, a laser beam fires a metallic layer through a dielectric passivating layer into the silicon wafer to form an electrical contact with the silicon bulk [1]. This laser technique is an interesting alternative for the fabrication of both laboratory and industrial scale high efficiency passivated emitter and rear cell (PERC). One of the principal characteristics of this promising technique is the capability to reduce the recombination losses at the rear surface in crystalline silicon solar cells. Therefore, it is crucial to optimize LFC because this process is one of the most promising concepts to produce rear side point contacts at process speeds compatible with the final industrial application. In that sense, this work investigates the optimization of LFC processing to improve the back contact in silicon solar cells using fully commercial solid state lasers with pulse width in the ns range, thus studying the influence of the wavelength using the three first harmonics (corresponding to wavelengths of 1064 nm, 532 nm and 355 nm). Previous studies of our group focused their attention in other processing parameters as laser fluence, number of pulses, passivating material [2, 3] thickness of the rear metallic contact [4], etc. In addition, the present work completes the parametric optimization by assessing the influence of the laser wavelength on the contact property. In particular we report results on the morphology and electrical behaviour of samples specifically designed to assess the quality of the process. In order to study the influence of the laser wavelength on the contact feature we used as figure of merit the specific contact resistance. In all processes the best results have been obtained using green (532 nm) and UV (355 nm), with excellent values for this magnitude far below 1 mΩcm2

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented

Sub-wavelength patterning of the optical near-field

We report the sub-wavelength patterning of the optical near-field by total internal reflection illumination of a regular array of resonant gold nano-particles. Under appropriate conditions, the in-plane coupling between Localized Surface Plasmon (LSP) fields gives rise to sub-wavelength light spots between the structures. Measurements performed with an Apertureless Scanning Near-Field Optical Microscope (ASNOM) show a good agreement with theoretical predictions based on the Green dyadic method. This concept might offer a convenient way to elaborate extended optical trap landscapes for manipulation of sub-micrometer systems.Peer ReviewedPostprint (published version

Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H

Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed effective surface recombination velocities as low as 60 and 130 cms -1 on p- and n-type silicon, respectively. To our knowledge, these are the best results ever reported with intrinsic amorphous silicon films deposited by Catalytic CVD. The passivating properties of nanocrystalline silicon films strongly depended on the deposition conditions, especially on the filament temperature. Samples grown at lower filament temperatures (1600 °C) allowed effective surface recombination velocities of 450 and 600 cms -1 on n- and p-type silicon

Thin Film Transistors obtained by Hot-Wire CVD

Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material