VCSEL à fils quantiques présentant une émission laser de 1647 à 1542 nm

National audienceLes lasers à cavité verticale émettant par la surface (VCSEL) présentent de grands intérêts pour des applications variées (télécommunication, capteurs, ..), d'autant plus si ces derniers s'avèrent stables et accordables en longueur d'onde. Au-delà du procédé technologique utilisé, cette dernière propriété est aussi très limitée par l'extension du gain spectral de la zone active. Nous présentons ici la réalisation d'un VCSEL émettant à 1.55 μm, et présentant une émission laser sur une plage en longueur d'onde de 105 nm

VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span

International audienceWe report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling thus to monitor the gain material bandwidth. We demonstrate a 117 nm continuous wavelength variation of the VCSEL emission, a consequence of the important and wide gain afforded by the use of optimized quantum dashes

VCSEL à fils quantiques présentant une émission laser de 1647 à 1542 nm

National audienceLes lasers à cavité verticale émettant par la surface (VCSEL) présentent de grands intérêts pour des applications variées (télécommunication, capteurs, ..), d'autant plus si ces derniers s'avèrent stables et accordables en longueur d'onde. Au-delà du procédé technologique utilisé, cette dernière propriété est aussi très limitée par l'extension du gain spectral de la zone active. Nous présentons ici la réalisation d'un VCSEL émettant à 1.55 μm, et présentant une émission laser sur une plage en longueur d'onde de 105 nm

InAs quantum wires on InP substrate for VCSEL applications

International audienceQuantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL laser polarization appears stable on the whole sample and with excitation, no switching is observed. Its polarization is mainly oriented along [1-10], an extinction coefficient of 30 dB is measured. Those preliminary results demonstrate the interests of quantum dashes in the realization of controlled and stable polarization VCSEL device

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

International audienceThe growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20-200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results

Champs dynamiques et thermiques dans une enceinte ventilée en régimes naturel, intermédiaire et bloqué ; cas instationnaire

On étudie expérimentalement les écoulements générés par un panache, de débit volumique constant et de température croissante au cours du temps, dans une enceinte en communication avec l'extérieur par deux ouvertures situées en partie haute et basse du compartiment. Les résultats montrent l'apparition successive de trois régimes d'écoulements selon la valeur d'un nombre de Froude densitométrique calculé à partir des caractéristiques du panache, du champ thermique et de la hauteur de l'ouverture haute

Comparison of radiative and structural properties of 1.3 µm InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

The authors have studied the radiative and structural properties of identical InxGa(1-x)As quantum dot laser structures grown by metalorg. CVD (MOCVD) and MBE. Despite the comparable emission properties found in the two devices by photoluminescence, electroluminescence, and photocurrent spectroscopy, efficient lasing from the ground state is achieved only in the MBE sample, whereas excited state lasing was obtained in the MOCVD device. Such a difference is ascribed to the existence of the internal dipole field in the MOCVD structure, induced by the strong faceting of the dots, as obsd. by high-resoln. TEM. [on SciFinder (R)

InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Self-assembled quantum dots (QDs) have attracted much attention in the last years. These nanostructures are very interesting from a scientifi c point of view because they form nearly ideal zero-dimensional systems in which quantum confi nement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers, single electron transistors, midinfrared detectors, single-photon sources, etc. InAs QDs are commonly created by the Stranski–Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP [10] . Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application. Self-assembled quantum dots (QDs) have attracted much attention in the last years. These nanostructures are very interesting from a scientifi c point of view because they form nearly ideal zero-dimensional systems in which quantum confi nement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers, single electron transistors, midinfrared detectors, single-photon sources, etc. InAs QDs are commonly created by the Stranski–Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP. Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application

Séminaire du RT 34 du 26 janvier 2018 Elise Roullaud

Le  RT 34 Sociologie politique de l’Association Française de Sociologie (AFS) organise un séminaire autour du livre de : Élise Roullaud Contester l'Europe agricole. La Confédération Paysanne à l'épreuve de la PAC  Presses Universitaires de Lyon, Coll. "Actions collectives", 2017.  La discussion sera introduite par Antonin Cohen (ISP/Université de Nanterre), Aïcha Bourad (RT 34, LASSP/IEP Toulouse) et Jean-Baptiste Paranthoën (RT 34, CRH/EHESS). La séance, ouverte à tou-te-s, aura lieu le ven..