Comparison of dynamic properties of InP/InAs quantum-dot and quantum-dash lasers

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 109, 161104 (2016) and may be found at https://doi.org/10.1063/1.4965846.The dynamic properties of MOVPE grown InP/InAs quantum-dot and quantum-dash lasers, showing identical structural design, emitting in the C-band are investigated and compared to each other. Based on the small-signal measurements, we show the impact of the density of states function on the cut-off frequency, being larger for quantum dots at low currents, and reaching similar values for quantum dashes only at higher currents. The large-signal measurements show error-free data transmission at 22.5 and 17.5 Gbit/s for the quantum-dot and quantum-dash lasers.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP7/EU/264687/Postgraduate Research on Photonics as an Enabling Technology/PROPHE

Asymmetry in self-assembled quantum dot-molecules made of identical InAs/GaAs quantum dots

We show that a diatomic dot molecule made of two identical, vertically stacked, strained InAs/GaAs self-assembled dots exhibits an asymmetry in its single-particle and may-particle wavefunctions. The single-particle wave function is asymmetric due to the inhomogeneous strain, while the asymmetry of the many-particle wavefunctions is caused by the correlation induced localization: the lowest singlet $^1\Sigma_g$ and triplet $^3\Sigma$ states show that the two electrons are each localized on different dots within the molecule, for the next singlet states $^1\Sigma_u$ both electrons are localized on the same (bottom) dot for interdot separation $d>$ 8 nm. The singlet-triplet splitting is found to be $\sim 0.1$ meV at inter-dot separation $d$=9 nm and as large as 100 meV for $d$=4 nm, orders of magnitude larger than the few meV found in the large (50 - 100 nm) electrostatically confined dots

Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 113, 221107 (2018) and may be found at https://doi.org/10.1063/1.5054645.High-brightness vertical broad-area edge-emitting (HiBBEE) semiconductor lasers in the 1060 nm wavelength range with excellent beam quality in both lateral and vertical directions are presented. An approach to modify the thresholds of the transverse lateral modes of ridge-waveguide (RW) lasers is investigated. It has been experimentally shown that inhomogeneities in both sides of the ridges increase optical losses of the higher-order lateral modes as compared to the fundamental mode. The resulting enhancement in the contrast of the optical losses favors the emission of the fundamental mode and improves the beam quality. Reference RW HiBBEE lasers with a 15 μm wide conventional ridge and a 2.0 mm long cavity provide laterally multi-lateral mode emission which is typical for RW lasers with such wide and homogeneous ridges. On the other hand, RW HiBBEE lasers with triangular-shaped corrugations in both sides of 15 μm wide ridges provide single-lateral mode emission across a wide current range and improve the lateral M2 factor by more than a factor of 2 in the investigated current range. The corrugated RW HiBBEE lasers provide an almost 2 times higher brightness than the reference RW lasers

Fabrication and characterization of integrable GaAs-based high-contrast grating reflector and Fabry-Pérot filter array with GaInP sacrificial layer

Integrable GaAs-based high-contrast gratings (HCGs) are fabricated and characterized, targeting applications in high-speed vertical-cavity surface-emitting lasers (VCSELs). A Ga 0.51 In 0.49 P sacrificial layer beneath the GaAs layer is employed to create a low index surrounding HCG strips by selective etching. Experimental results show that the finite-size HCG has a reflectivity of 93% from 1270 to 1330 nm for the transverse magnetic polarization, which is consistent with the calculated results. An HCG-based Fabry-Perot filter array formed by the different HCGs, air gap, and GaAs substrate is demonstrated. The measured resonance wavelengths of the filter arrays are consistent with the theoretical results, which implies that the resonance wavelength of such filters can be tuned by parameters of the HCG itself

GaAs-based subwavelength grating on an AlOx layer for a vertical-cavity surface-emitting laser

© 2020 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.A GaAs-based subwavelength grating on a thick (∼3/4*λ at 1300 nm) AlOx layer is designed, fabricated, and characterized. The AlOx layer as a low-index medium is oxidized from a 640-nm Al0.9Ga0.1As layer. The layer contraction of the Al0.9Ga0.1As layer after wet oxidation to AlOx is 4.9%. We fabricated GaAs-based subwavelength gratings on the AlOx layer showing a high reflectivity of 90% in the 1300-nm wavelength range, consistent with the simulation results. Such GaAs-based subwavelength gratings can be used as high-contrast grating mirrors for narrow-linewidth VCSELs, improving the mechanical stability and simplifying the device fabrication

Thermal analysis of high-bandwidth and energy-efficient 980 nm VCSELs with optimized quantum well gain peak-to-cavity resonance wavelength offset

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 111, 243508 (2017) and may be found at https://doi.org/10.1063/1.5003288.The static and dynamic performance of vertical-cavity surface-emitting lasers (VCSELs) used as light-sources for optical interconnects is highly influenced by temperature. We study the effect of temperature on the performance of high-speed energy-efficient 980 nm VCSELs with a peak wavelength of the quantum well offset to the wavelength of the fundamental longitudinal device cavity mode so that they are aligned at around 60 °C. A simple method to obtain the thermal resistance of the VCSELs as a function of ambient temperature is described, allowing us to extract the active region temperature and the temperature dependence of the dynamic and static parameters. At low bias currents, we can see an increase of the −3 dB modulation bandwidth f−3dB with increasing active region temperature, which is different from the classically known situation. From the detailed analysis of f−3dB versus the active region temperature, we obtain a better understanding of the thermal limitations of VCSELs, giving a basis for next generation device designs with improved temperature stability

1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 106, 031114 (2015) and may be found at https://doi.org/10.1063/1.4906451.Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP7/EU/264687/Postgraduate Research on Photonics as an Enabling Technology/PROPHE

Electrical manipulation of an electronic two-state system in Ge/Si quantum dots

We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the individual dot's electronic ground state between apex and base

Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 107, 191111 (2015) and may be found at https://doi.org/10.1063/1.4935796.This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ(3)/g0 of ∼4 × 10−19 m3/V3 are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carrier populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ(3)/g0 compared to quantum dash lasers.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP7/EU/264687/Postgraduate Research on Photonics as an Enabling Technology/PROPHE