Dimensionality of charge transport in organic field-effect transistors

Application of a gate bias to an organic field-effect transistor leads to accumulation of charges in the organic semiconductor within a thin region near the gate dielectric. An important question is whether the charge transport in this region can be considered two-dimensional, or whether the possibility of charge motion in the third dimension, perpendicular to the accumulation layer, plays a crucial role. In order to answer this question we have performed Monte Carlo simulations of charge transport in organic field-effect transistor structures with varying thickness of the organic layer, taking into account all effects of energetic disorder and Coulomb interactions. We show that with increasing thickness of the semiconductor layer the source-drain current monotonically increases for weak disorder, whereas for strong disorder the current first increases and then decreases. Similarly, for a fixed layer thickness the mobility may either increase or decrease with increasing gate bias. We explain these results by the enhanced effect of state filling on the current for strong disorder, which competes with the effects of Coulomb interactions and charge motion in the third dimension. Our conclusion is that apart from the situation of a single monolayer, charge transport in an organic semiconductor layer should be considered three-dimensional, even at high gate bias

Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced

Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors

During prolonged application of a gate bias, organic field-effect transistors show a gradual shift of the threshold voltage towards the applied gate bias voltage. The shift follows a stretched-exponential time dependence governed by a relaxation time. Here, we show that a thermodynamic analysis reproduces the observed exponential dependence of the relaxation time on the oxidation potential of the semiconductor. The good fit with the experimental data validates the underlying assumptions. It demonstrates that this operational instability is a straightforward thermodynamically driven process that can only be eliminated by eliminating water from the transistor

Analytical Study of Graphene as a Novel Piezoresistive Material for MEMS Pressure Sensor Application

The one-atom thick layer of carbon has been investigated with its unique exclusive property such as high thermal conductivity due to the high velocity of electron and exceptional electrical conductivity as well as mechanical strength. Due to its extraordinary properties; graphene put back many conventional materials to due smart, sensitive applications. As graphene has no band gap (Eg ~0 eV) but there is one method to induce a band gap by applying strain and each specific strain direction will create a unique band gap structure, in return it give signals which can be sensed by the device. The device can be operated either optically or electrically at different pressure levels up to Tera Pascal range thereby providing designers and engineers with a versatile sensing solution. To fabricate MEMS sensor based on a single layer of graphene, the piezoresistive pressure is becoming the most devastating problem up to nanoscale without damaging and high quality, defect free graphene. In this paper, we discussed the issues and cost effective solutions to integrate MEMS/NEMS pressure sensor device. We also compared the sensor performance with traditional piezoresistive materials

Phase Separation Based on U(1) Slave-boson Functional Integral Approach to the t-J Model

We investigate the phase diagram of phase separation for the hole-doped two dimensional system of antiferromagnetically correlated electrons based on the U(1) slave-boson functional integral approach to the t-J model. We show that the phase separation occurs for all values of J/t, that is, whether $0 < J/t < 1$ or $J/t \geq 1$ with J, the Heisenberg coupling constant and t, the hopping strength. This is consistent with other numerical studies of hole-doped two dimensional antiferromagnets. The phase separation in the physically interesting J region, $0 < J/t \lesssim 0.4$ is examined by introducing hole-hole (holon-holon) repulsive interaction. We find from this study that with high repulsive interaction between holes the phase separation boundary tends to remain robust in this low $J$ region, while in the high J region, J/t > 0.4, the phase separation boundary tends to disappear.Comment: 4 pages, 2 figures, submitted to Phys. Rev.

Testing one-body density functionals on a solvable model

There are several physically motivated density matrix functionals in the literature, built from the knowledge of the natural orbitals and the occupation numbers of the one-body reduced density matrix. With the help of the equivalent phase-space formalism, we thoroughly test some of the most popular of those functionals on a completely solvable model.Comment: Latex, 16 pages, 4 figure

Chemical contrast in STM imaging of transition metal aluminides

The present manuscript reviews recent scanning tunnelling microscopy (STM) studies of transition metal (TM) aluminide surfaces. It provides a general perspective on the contrast between Al atoms and TM atoms in STM imaging. A general trend is the much stronger bias dependence of TM atoms, or TM-rich regions of the surface. This dependence can be attenuated by the local chemical arrangements and environments. Al atoms can show a stronger bias dependence when their chemical environment, such as their immediate subsurface, is populated with TM. All this is well explained in light of combined results of STM and both theoretical and experimental electronic and crystallographic structure determinations. Since STM probes the Fermi surface, the electronic structure in the vicinity of the Fermi level (EF) is essential forunderstanding contrast and bias dependence. Hence, partial density of states provides information about the TM d band position and width, s–p–d hybridization or interactions, or charge transfer between constituent elements. In addition, recent developments in STM image simulations are very interesting for elucidating chemical contrast at Al–TM alloy surfaces, and allow direct atomic identification, when the surface does not show too much disorder. Overall, we show that chemically-specific imaging is often possible at these surfaces

Low mass fraction impregnation with graphene oxide (GO) enhances thermo-physical properties of paraffin for heat storage applications

Whereas previous researchers analyzed the thermal behavior of paraffin waxes impregnated with graphene oxide nanoparticles (P-GONP) at high mass fraction ( > 1%), this paper analyzes behavior and stability at only 0.3% mass fraction. GONP was prepared by Hummer’s method. The morphology was studied using scanning electron microscope (SEM), transmission electron microscope (TEM), X-Ray diffraction (XRD) and Fourier Transformation-Infrared (FT-IR) Spectrometer and the thermal properties were measured using laser flash analyser (LFA), differential scanning calorimetry (DSC), thermo-gravimetric analysis (TGA) and thermal cycling. LFA showed a 101.2% and 94.5% increase in the thermal conductivity of P-GONP compared to pure paraffin (P) in solid and liquid state respectively. Melting and solidifying temperatures and latent heat were found to be 63.5, 59 °C & 102 kJ/kg and 57.5, 56 °C & 64.7 kJ/kg for P and P-GONP respectively. Thermal cycling over 4000 cycles showed that P-GONP was 27% more stable than P. The latent heat was 64.7 kJ/kg, a 36.5% deterioration compared to virgin paraffin. Compared against higher mass fraction impregnation, lower mass fraction P-GONP was found to have almost equivalent thermo-physical properties (namely thermal conductivity, melting and solidifying characteristics, thermo-chemical stability and reliability) while providing considerable cost saving

Nivolumab Alone and With Ipilimumab in Previously Treated Metastatic Urothelial Carcinoma: CheckMate 032 Nivolumab 1 mg/kg Plus Ipilimumab 3 mg/kg Expansion Cohort Results

PURPOSE CheckMate 032 is an open-label, multicohort study that includes patients with unresectable locally advanced or metastatic urothelial carcinoma (mUC) treated with nivolumab 3 mg/kg monotherapy every 2 weeks (NIVO3), nivolumab 3 mg/kg plus ipilimumab 1 mg/kg every 3 weeks for four doses followed by nivolumab monotherapy 3 mg/kg every 2 weeks (NIVO3+IPI1), or nivolumab 1 mg/kg plus ipilimumab 3 mg/kg every 3 weeks for four doses followed by nivolumab monotherapy 3 mg/kg every 2 weeks (NIVO1+IPI3). We report on the expanded NIVO1+IPI3 cohort and extended follow-up for the NIVO3 and NIVO3+IPI1 cohorts. METHODS Patients with platinum-pretreated mUC were enrolled in this phase I/II multicenter study to receive NIVO3, NIVO3+IPI1, or NIVO1+IPI3 until disease progression or unacceptable toxicity. Primary end point was investigator-assessed objective response rate per Response Evaluation Criteria in Solid Tumors (RECIST) version 1.1, including duration of response. RESULTS Seventy-eight patients were treated with NIVO3 (minimum follow-up, 37.7 months), 104 with NIVO3+IPI1 (minimum follow-up, 38.8 months), and 92 with NIVO1+IPI3 (minimum follow-up, 7.9 months). Objective response rate was 25.6%, 26.9%, and 38.0% in the NIVO3, NIVO3+IPI1, and NIVO1+IPI3 arms, respectively. Median duration of response was more than 22 months in all arms. Grade 3 or 4 treatment-related adverse events occurred in 21 (26.9%), 32 (30.8%), and 36 (39.1%) patients treated with NIVO3, NIVO3+IPI1, and NIVO1+IPI3, respectively. Grade 5 treatment-related pneumonitis occurred in one patient each in the NIVO3 and NIVO3+IPI1 arms. CONCLUSION With longer follow-up, NIVO3 demonstrated sustained antitumor activity alone and in combination with ipilimumab. NIVO1+IPI3 provided the greatest antitumor activity of all regimens, with a manageable safety profile. This result not only supports additional study of NIVO1+IPI3 in mUC, but demonstrates the potential benefit of immunotherapy combinations in this disease