8,443 research outputs found
Adsorption of H2O, NH3, CO, NO2, and NO on graphene: A first-principles study
Motivated by the recent realization of graphene sensors to detect individual
gas molecules, we investigate the adsorption of H2O, NH3, CO, NO2, and NO on a
graphene substrate using first-principles calculations. The optimal adsorption
position and orientation of these molecules on the graphene surface is
determined and the adsorption energies are calculated. Molecular doping, i.e.
charge transfer between the molecules and the graphene surface, is discussed in
light of the density of states and the molecular orbitals of the adsorbates.
The efficiency of doping of the different molecules is determined and the
influence of their magnetic moment is discussed.Comment: 6 pages, 6 figure
Electronic structure and enhanced visible light absorption of N, B-codoped TiO2
We present the GGA+U calculations to investigate the electronic structure and
visible light absorption of the N, B-codoped anatase TiO2. The NsBi
(substitutional N, interstitial B) codoped TiO2 produces significant Ti 3d and
N 2p mid-gap states when the distance of N and B atoms is far, and the NiBi
(interstitial N and B) and NsBs (substitutional N and B) codoped TiO2 prefer to
form localized p states at 0.3-1.2 eV above the valence band maximum. Further,
the optical band edges of the three codoped systems shift slightly to the
visible region, but only the far distance NsBi codoped TiO2 shows an obvious
visible optical transition. These results indicate that the NsBi codoped TiO2
has a dominant contribution to the visible absorption of the N, B-codoped TiO2.Comment: 4 pages, 4 figures, 17 reference
Electronic Fock spaces: Phase prefactors and hidden symmetry
Efficient technique of manipulation with phase prefactors in electronic Fock
spaces is developed. Its power is demonstrated on example of both relatively
simple classic configuration interaction matrix element evaluation and
essentially more complicated coupled cluster case. Interpretation of coupled
cluster theory in terms of a certain commutative algebra is given.Comment: LaTex, 31 pages, submitted to Int. J. Quantum Che
Projection of plane-wave calculations into atomic orbitals
The projection of the eigenfunctions obtained in standard plane-wave
first-principle electronic-structure calculations into atomic-orbital basis
sets is proposed as a formal and practical link between the methods based on
plane waves and the ones based on atomic orbitals. Given a candidate atomic
basis, ({\it i}) its quality is evaluated by its projection into the plane-wave
eigenfunctions, ({\it ii}) it is optimized by maximizing that projection, ({\it
iii}) the associated tight-binding Hamiltonian and energy bands are obtained,
and ({\it iv}) population analysis is performed in a natural way. The proposed
method replaces the traditional trial-and-error procedures of finding
appropriate atomic bases and the fitting of bands to obtain tight-binding
Hamiltonians. Test calculations of some zincblende semiconductors are
presented.Comment: RevTex. 4 pages. 3 uuencoded compressed (tared) postscript figs. To
appear in Solid St. Commu
The structure and phase stability of CO adsorbates on Rh(110)
The structure of CO adsorbates on the Rh(110) surface is studied at full
coverage using first-principles techniques. The relative energies of different
adsorbate geometries are determined by means of accurate structure
optimizations. In agreement with experiments, we find that a p2mg(2x1) 2CO
structure is the most stable. The CO molecules sit on the short-bridge site
(carbon below) with the molecular axis slightly tilted off the surface normal,
along the (001) direction. Configurations corresponding to different
distributions of tilt angles are mapped onto an anisotropic 2D Ising model
whose parameters are extracted from our ab-initio calculations. We find that an
order-disorder phase-transition occurs at a temperature T_c=350 K.Comment: 4 pages, latex file, 2 figures include
Mechanisms of doping graphene
We distinguish three mechanisms of doping graphene. Density functional theory
is used to show that electronegative molecule like F4-TCNQ and electropositive
metals like K dope graphene p- and n-type respectively. These dopants are
expected to lead to a decrease in carrier mobility arising from Coulomb
scattering but without any hysteresis effects. Secondly, a novel doping
mechanism is exhibited by Au which dopes bilayer graphene but not single layer.
Thirdly, electrochemical doping is effected by redox reactions and can result
in p-doping by humid atmospheres and n-doping by NH3 and toluene.Comment: submitted to Physica Status Solid
Electronic structure of superconducting gallium-doped germanium from ab-initio calculations
Using ab-initio calculations, we study the electronic structure of
gallium-doped germanium, which was found recently to be a superconductor, with
a critical temperature of 0.5 Kelvins, and a particularly low density of Cooper
pairs. The calculations of the electronic properties reveal that no sign of an
impurity band is observed, and that the Fermi level lies in the valence band of
Germanium. Moreover, the calculation of the phonon frequencies shows that a new
mode associated to the Ga atom is appearing, around 175$ cm-1.Comment: Submitted to physica status solidi - Rapid Research Letter
Electronic structure and exchange constants in magnetic semiconductors digital alloys: chemical and band-gap effects
First-principles simulations have been performed for [001]-ordered Mn/Ge and
Mn/GaAs "digital alloys", focusing on the effects of i) a larger band-gap and
ii) a different semiconducting host on the electronic structure of the magnetic
semiconductors of interest. Our results for the exchange constants in Mn/Ge,
evaluated using a frozen-magnon scheme, show that a larger band-gap tends to
give a stronger nearest-neighbor ferromagnetic coupling and an overall enhanced
in-plane ferromagnetic coupling even for longer-ranged coupling constants. As
for the chemical effects on the exchange constants, we show that Mn/GaAs shows
a smaller nearest-neighbor ferromagnetic coupling than Mn/Ge, but exchange
constants for higher Mn-Mn distance show an overall increased ferromagnetic
behavior in Mn/GaAs. As a result, from the magnetic-coupling point of view, the
two systems behave on average rather similarly
A New Class of Boron Nanotube
The configurations, stability and electronic structures of a new class of
boron sheet and related boron nanotubes are predicted within the framework of
density functional theory. This boron sheet is sparser than those of recent
proposals. Our theoretic results show that the stable boron sheet remains flat
and is metallic. There are bands similar to the p-bands in graphite near the
Fermi level. Stable nanotubes with various diameters and chiral vectors can be
rolled from the sheet. Within our study, only the thin (8, 0) nanotube with a
band gap of 0.44 eV is semiconducting, while all the other thicker boron
nanotubes are metallic, independent of their chirality. It indicates the
possibility, in the design of nanodevices, to control the electronic transport
properties of the boron nanotube through the diameter
Variational finite-difference representation of the kinetic energy operator
A potential disadvantage of real-space-grid electronic structure methods is
the lack of a variational principle and the concomitant increase of total
energy with grid refinement. We show that the origin of this feature is the
systematic underestimation of the kinetic energy by the finite difference
representation of the Laplacian operator. We present an alternative
representation that provides a rigorous upper bound estimate of the true
kinetic energy and we illustrate its properties with a harmonic oscillator
potential. For a more realistic application, we study the convergence of the
total energy of bulk silicon using a real-space-grid density-functional code
and employing both the conventional and the alternative representations of the
kinetic energy operator.Comment: 3 pages, 3 figures, 1 table. To appear in Phys. Rev. B. Contribution
for the 10th anniversary of the eprint serve
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