Zinc Oxide Nanoparticles Catalyzed Condensation Reaction of Isocoumarins and 1,7-Heptadiamine in the Formation of Bis-Isoquinolinones

The diversified bis-isoquinolinones were obtained in two steps, utilizing homophthalic acid and various acid chlorides providing 3-substituted isocoumarins in the first step which on further condensation with 1,7-heptadiamine involving C–N bond formation from the lactone in the presence of 10 mol% zinc oxide nanoparticles (ZnO NPs) (<150 nm) afforded the desired bis-isoquinolinones in high yield and purity. The synthesized compounds were then characterized using FTIR, 1H NMR, 13C NMR, and HRMS techniques

Layered materials and their heterojunctions for supercapacitor applications: a review

Supercapacitors have recently emerged as a potential technology with superior charge storage capacity and power density. Layered materials, by the virtue of their morphology and high surface area, are deemed to be potential candidates for storing charge or energy. In this review, the supercapacitive properties and electrochemical stability of different layered materials (MnO2, graphene, g-C3N4, MoS2, and MXenes) in a wide range of electrolytes is discussed. Moreover, an overview of the heterojunctions or composites of these 2D materials is included, emphasizing their synergistic effect towards improved supercapacitive performance and cyclic stability. Most importantly, the capacitive behavior dependence on the working electrode morphology, crystal structure, and type of electrolyte is explained. A future perspective on the design and use of these layered materials and their heterojunctions for commercial applications is presented

Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal-insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range

In this manuscript, we reported the electrical characteristics and structural analysis of In/Fe3O4/SiO2/n-Si/In MIS-type SBD heterostructure comprehensively in the temperature range 10-300K using I-V, XRD, TEM and AFM measurements. Pulsed laser deposition in association with DC magnetron sputtering techniques has been utilized to fabricate the proposed In/Fe3O4/SiO2/n-Si/In heterojunction. The fabricated heterojunction revealed that the I-V curves are non-linear and asymmetric in nature. Using these I-V curves in the forward-bias region, SBH is calculated as 0.02eV at 10K and 0.74eV at 300K. On the other hand, the ideality factor (n) value was calculated as 7.55 at 10K and 1.37 at 300K. The series resistance (R-S) values were also evaluated using Chenug's method and the values were 1121 at 10K and 334 at 300K. The dependence of important diode parameters such as SBH, n' and R-S' on measurement temperature was effectively explained firstly on account of triple Gaussian distribution of barrier heights with the help of barrier inhomogeneities of the prepared heterojunction. The value of the Richardson's constant calculated for the fabricated In/Fe3O4/SiO2/n-Si/In heterojunction in the 110-300K temperature regime was calculated to be 115.26A/cm(2)K(2) and is approximately equal to the theoretical value of 120A/cm(2)K(2) for n-type Si. In addition, the higher value (greater than one) of ideality factor at all operating temperatures from 10-300K demonstrated that the probable current transport across the Fe3O4/SiO2/n-Si junction is not only due to the thermionic emission (TE) mechanism. Hence, to reveal the origin of current transport mechanism i.e., other than TE, we noticed that the governing current transport process through the fabricated hetrojunction is mainly due to the tunneling assisted Poole-Frenkel class of emission across the Fe3O4/SiO2/n-Si junction which is found to be temperature-dependent