Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs

Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the ID and gm levels. DC characterization at high temperature has demonstrated that ID and gm decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects

Temperature dependence of underdense nanostructure formation in tungsten under helium irradiation

Recently, tungsten has been found to form a highly underdense nanostructured morphology ("W fuzz") when bombarded by an intense flux of He ions, but only in the temperature window 900-2000 K. Using object kinetic Monte Carlo simulations (pseudo-3D simulations) parameterized from first principles, we show that this temperature dependence can be understood based on He and point defect clustering, cluster growth, and detrapping reactions. At low temperatures (2300 K), all He is detrapped from clusters, preventing the formation of the large clusters that lead to fuzz growth in the intermediate temperature range. (C) 2017 Elsevier B.V. All rights reserved.Peer reviewe

Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

The solid phase epitaxial growth process has been studied at 330 °C by transmission electron microscopy for Ge wafers polished at 10°–15° increments from the [001] to [011] orientations. The velocity showed a strong dependence on substrate orientation with the [001] direction displaying a velocity 16 times greater than the [111] direction. A lattice kinetic Monte Carlo model was used to simulate solid phase epitaxial growth (SPEG) rates at different orientations, and simulations compared well with experimental results. Cross sectional transmission electron microscopy and plan view transmission electron microscopy revealed stacking fault and twin defect formation in the [111] orientation where all other orientations showed only hairpin dislocations. The twin defects formed from Ge SPEG were comparatively less dense than what has previously been reported for Si, which gave rise to higher normalized velocities and a constant [111] SPEG velocity for Ge.The authors acknowledge Intel Corporation for funding this work. I.M.-B. acknowledges funding from the European project MASTIC (PCIG09-GA-2011-293783)

Evaluation of APD and SiPM Matrices as Sensors for Monolithic PET Detector Block

Gamma detectors based on monolithic scintillator blocks coupled to APDs matrices have proved to be a good alternative to pixelated ones for PET scanners. They provide comparable spatial resolution, improve the sensitivity and make easier the mechanical design of the system. In this study we evaluate by means of Geant4-based simulations the possibility of replacing the APDs by SiPMs. Several commercial matrices of light sensors coupled to LYSO:Ce monolithic blocks have been simulated and compared. Regarding the spatial resolution and linearity of the detector, SiPMs with high photo detection efficiency could become an advantageous replacement for the APD

High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs

The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature

Evaluation of a PET Prototype Using LYSO:Ce Monolithic Detector Block

We have analyzed the performance of a PET demonstrator formed by two sectors of four monolithic detector blocks placed face-to-face. Both front-end and read-out electronics have been evaluated by means of coincidence measurements using a rotating 22Na source placed at the center of the sectors in order to emulate the behavior of a complete full ring. A continuous training method based on neural network (NN) algorithms has been carried out to determine the entrance points over the surface of the detectors. Reconstructed images from 1 MBq 22Na point source and 22Na Derenzo phantom have been obtained using both filtered back projection (FBP) analytic methods and the OSEM 3D iterative algorithm available in the STIR software package [1]. Preliminary data on image reconstruction from a 22Na point source with Ø = 0.25 mm show spatial resolutions from 1.7 to 2.1 mm FWHM in the transverse plane. The results confirm the viability of this design for the development of a full-ring brain PET scanner compatible with magnetic resonance imaging for human studies

Activation of the mTOR signalling pathway is required for pancreatic growth in protease-inhibitor-fed mice

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/65924/1/jphysiol.2006.106914.pd

Influence of free surfaces on microstructure evolution of radiation damage in Fe from molecular dynamics and object kinetic Monte Carlo calculations

The influence of surfaces on the evolution of damage of irradiated Fe is studied using object kinetic Monte Carlo with input from molecular dynamics simulations and ab initio calculations. Two effects are analysed: the influence of traps and the initial distribution of damage in the cascade. These simulations show that for a trap concentration of around 100 appm, there are no significant differences between defect concentrations in bulk and thin films. However, the initial distribution of defects plays an important role not only on total defect concentration but also on defect type, for the model used in this study. Damage produced by a 100 keV Fe ion impinging a Fe thin film. Blue (dark) spheres are self-interstitials, red (light) spheres are vacancies.The research leading to these results is partly funded by the European Atomic Energy Community’s (Euratom) Seventh Framework Programme FP7/2007–2013 under grant agreement no. 604862 (MatISSE project) and in the framework of the EERA (European Energy Research Alliance) Joint Programme on Nuclear Materials. This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014–2018 under grant agreement no. 633053