Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces

We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned SiO2-coated InP(001), InP(111)B, and InP(011) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic present in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.QRD/Kouwenhoven LabQuTechQN/Kouwenhoven La

EUREC(4)A's HALO

As part of the EUREC(4)A (Elucidating the role of cloud-circulation coupling in climate) field campaign, the German research aircraft HALO (High Altitude and Long Range Research Aircraft), configured as a cloud observatory, conducted 15 research flights in the trade-wind region east of Barbados in January and February 2020. Narrative text, aircraft state data, and metadata describing HALO's operation during the campaign are provided. Each HALO research flight is segmented by timestamp intervals into standard elements to aid the consistent analysis of the flight data. Photographs from HALO's cabin and animated satellite images synchronized with flight tracks are provided to visually document flight conditions. As a comprehensive product from the remote sensing observations, a multi-sensor cloud mask product is derived and quantifies the incidence of clouds observed during the flights. In addition, to lower the threshold for new users of HALO's data, a collection of use cases is compiled into an online book, How to EUREC(4)A, included as an asset with this paper. This online book provides easy access to most of EUREC(4)A's HALO data through an intake catalogue. Code and data are freely available at the locations specified in Table 6