Optimizing band-edge slow light in silicon-on-insulator waveguide gratings

A systematic analysis of photonic bands and group index in silicon grating waveguides is performed, in order to optimize band-edge slow-light behavior in integrated structures with low losses. A combination of numerical methods and perturbation theory is adopted. It is shown that a substantial increase of slow light bandwidth is achieved when decreasing the internal width of the waveguide and the silicon thickness in the cladding region. It is also observed that a reduction of the internal width does not undermine the performance of an adiabatic taper

Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Reducing power dissipation in electro-optic modulators is a key step for widespread application of silicon photonics to optical communication. In this work, we design Mach–Zehnder modulators in the silicon-on-insulator platform, which make use of slow light in a waveguide grating and of a reverse-biased p-n junction with interleaved contacts along the waveguide axis. After optimizing the junction parameters, we discuss the full simulation of the modulator in order to find a proper trade-off among various figures of merit such as modulation efficiency, insertion loss, cutoff frequency, optical modulation amplitude, and dissipated energy per bit. Comparison with conventional structures (with lateral p-n junction and/or in rib waveguides without slow light) highlights the importance of combining slow light with the interleaved p-n junction, thanks to the increased overlap between the travelling optical wave and the depletion regions. As a surprising result, the modulator performance is improved over an optical bandwidth that is much wider than the slow-light bandwidth

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

AbstractSlow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20–30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation

Slow light with interleaved p-n junction to enhance performance of integrated Mach-Zehnder silicon modulators

Slow light is a very important concept in nanophotonics, especially in the context of photonic crystals. In this work, we apply our previous design of band-edge slow light in silicon waveguide gratings [M. Passoni et al, Opt. Express 26, 8470 (2018)] to Mach-Zehnder modulators based on the plasma dispersion effect. The key idea is to employ an interleaved p-n junction with the same periodicity as the grating, in order to achieve optimal matching between the electromagnetic field profile and the depletion regions of the p-n junction. The resulting modulation efficiency is strongly improved as compared to common modulators based on normal rib waveguides, even in a bandwidth of 20–30 nm near the band edge, while the total insertion loss due to free carriers is not increased. The present concept is promising in view of realizing slow-light modulators for silicon photonics with reduced energy dissipation

Silicon solar cells: toward the efficiency limits

Photovoltaic (PV) conversion of solar energy starts to give an appreciable contribution to power generation in many countries, with more than 90% of the global PV market relying on solar cells based on crystalline silicon (c-Si). The current efficiency record of c-Si solar cells is 26.7%, against an intrinsic limit of ~29%. Current research and production trends aim at increasing the efficiency, and reducing the cost, of industrial modules. In this paper, we review the main concepts and theoretical approaches that allow calculating the efficiency limits of c-Si solar cells as a function of silicon thickness. For a given material quality, the optimal thickness is determined by a trade-off between the competing needs of high optical absorption (requiring a thicker absorbing layer) and of efficient carrier collection (best achieved by a thin silicon layer). The efficiency limits can be calculated by solving the transport equations in the assumption of optimal (Lambertian) light trapping, which can be achieved by inserting proper photonic structures in the solar cell architecture. The effects of extrinsic (bulk and surface) recombinations on the conversion efficiency are discussed. We also show how the main conclusions and trends can be described using relatively simple analytic models. Prospects for overcoming the 29% limit by means of silicon/perovskite tandems are briefly discussed

Retour sur l’oeuvre de Roberto Signorini (Milan, 1947-2009)

Nous remercions Maria Luisa Tornesello et Pierangelo Cavanna, qui ont mis à notre disposition les matériaux en leur possession. Photographe, essayiste, traducteur et divulgateur en Italie des théories les plus modernes du « photographique », Roberto Signorini s’intéresse à la photographie dès le début des années 1970, après avoir obtenu le diplôme de docteur ès lettres – avec une spécialité en philologie médiévale et humaniste – en 1971 à l’université catholique de Milan. Les études de philol..

Optimizing band-edge slow light in silicon-on-insulator waveguide gratings

Funding: European Union Horizon H2020 Programme (H2020-ICT27-2015, COSMICC no. 688516).A systematic analysis of photonic bands and group index in silicon grating waveguides is performed, in order to optimize band-edge slow-light behavior in integrated structures with low losses. A combination of numerical methods and perturbation theory is adopted. It is shown that a substantial increase of slow light bandwidth is achieved when decreasing the internal width of the waveguide and the silicon thickness in the cladding region. It is also observed that a reduction of the internal width does not undermine the performance of an adiabatic taper.Publisher PDFPeer reviewe

Bcl‐xL represents a therapeutic target in Philadelphia negative myeloproliferative neoplasms

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From Classical Four-Wave Mixing to Parametric Fluorescence in Silicon micro-ring resonators

Four-wave mixing can be stimulated or occur spontaneously. The first process is intrinsically much stronger, and well understood through classical nonlinear optics. The latter, also known as parametric fluorescence, can be explained only in the framework of a quantum theory of light. We experimentally demonstrate that, in a micro-ring resonator, there exists a simple relation between the efficiencies of these two processes, which is independent of the nonlinearity and size of the ring. In particular we show that the average power generated by parametric fluorescence can be immediately estimated from a classical FWM experiment. These results suggest that classical nonlinear characterization of a photonic integrated structure can provide accurate information on its nonlinear quantum properties.Comment: 4 pages, 3 figure