Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

The effect of Ga/N flux ratio on surface morphology, incorporation of point defects and electrical transport properties of GaN films grown by plasma-assisted molecular beam epitaxy in a recently developed high-temperature growth regime was investigated. The homoepitaxial (0001) GaN films grown at ∼780–790 °C showed smoothest morphologies near the cross-over between N-rich and Ga-rich growth(0.75<Ga/N<1.1) contrasting previous observations for low-temperature growth. The higher-quality growth near Ga/N∼1 resulted from lower thermal decomposition rates and was corroborated by slightly lower Ga vacancy concentrations [VGa], lower unintentional oxygen incorporation, and improved electron mobilities. The consistently low [VGa], i.e., ∼10exp16 cm−3 for all films attribute further to the significant benefits of the high-temperature growth regime.Peer reviewe

Disentangling canid howls across multiple species and subspecies: Structure in a complex communication channel.

Wolves, coyotes, and other canids are members of a diverse genus of top predators of considerable conservation and management interest. Canid howls are long-range communication signals, used both for territorial defence and group cohesion. Previous studies have shown that howls can encode individual and group identity. However, no comprehensive study has investigated the nature of variation in canid howls across the wide range of species. We analysed a database of over 2000 howls recorded from 13 different canid species and subspecies. We applied a quantitative similarity measure to compare the modulation pattern in howls from different populations, and then applied an unsupervised clustering algorithm to group the howls into natural units of distinct howl types. We found that different species and subspecies showed markedly different use of howl types, indicating that howl modulation is not arbitrary, but can be used to distinguish one population from another. We give an example of the conservation importance of these findings by comparing the howls of the critically endangered red wolves to those of sympatric coyotes Canis latrans, with whom red wolves may hybridise, potentially compromising reintroduced red wolf populations. We believe that quantitative cross-species comparisons such as these can provide important understanding of the nature and use of communication in socially cooperative species, as well as support conservation and management of wolf populations.Recording work was approved by the Institutional Animal Care and Use Committee of the University of Tennessee. AK is supported by a Herchel Smith postdoctoral fellowship at the University of Cambridge. Part of this work was carried out while AK was a Postdoctoral Fellow at the National Institute for Mathematical and Biological Synthesis, an Institute sponsored by the National Science Foundation through NSF Award #DBI-1300426, with additional support from The University of Tennessee, Knoxville. BH is thankful to the State Forest Departments of Himachal Pradesh, J&K, and Maharashtra, and to various zoos in India for permitting us to record howls. HRG is grateful to all who helped with the project: the staff at Colchester Zoo; the Wildwood Trust, the Borror Laboratory of Bioacoustics; the British Library; Lupus Laetus; Polish Mammal Research Institute; Tigress Productions; the BBC Natural History Unit; Longleat Safari Park; Tierstimmen Archiv; Wild Sweden; Wolf Park; the Macaulay Sound Library and the UK Wolf Conservation Trust; and Mike Collins, Teresa Palmer, Monty Sloan, Karl-Heinz Frommolt, Yorgos Iliopoulos, Christine Anhalt, Louise Gentle, Richard Yarnell, Victoria Allison Hughes and Susan Parks. BRM thanks the USDA/APHIS/WS/National Wildlife Research Center for supporting his doctoral research and providing access to captive coyotes; recording work was approved by the NWRC IACUC. SW thanks Mariana Olsen for assistance with data collection, and Yellowstone National Park for permission to record.This is the author accepted manuscript. The final version is available from Elsevier via http://dx.doi.org/10.1016/j.beproc.2016.01.00

Marine Incursion: The Freshwater Herring of Lake Tanganyika Are the Product of a Marine Invasion into West Africa

The spectacular marine-like diversity of the endemic fauna of Lake Tanganyika, the oldest of the African Great Lakes, led early researchers to suggest that the lake must have once been connected to the ocean. Recent geophysical reconstructions clearly indicate that Lake Tanganyika formed by rifting in the African subcontinent and was never directly linked to the sea. Although the Lake has a high proportion of specialized endemics, the absence of close relatives outside Tanganyika has complicated phylogeographic reconstructions of the timing of lake colonization and intralacustrine diversification. The freshwater herring of Lake Tanganyika are members of a large group of pellonuline herring found in western and southern Africa, offering one of the best opportunities to trace the evolutionary history of members of Tanganyika's biota. Molecular phylogenetic reconstructions indicate that herring colonized West Africa 25–50MYA, at the end of a major marine incursion in the region. Pellonuline herring subsequently experienced an evolutionary radiation in West Africa, spreading across the continent and reaching East Africa's Lake Tanganyika during its early formation. While Lake Tanganyika has never been directly connected with the sea, the endemic freshwater herring of the lake are the descendents of an ancient marine incursion, a scenario which may also explain the origin of other Tanganyikan endemics

Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

&nbsp;We report self-induced growth of vertically aligned (i.e. along the [ 111] direction), free-standing InAs nanowires on Si(111) substrates by solid-source molecular beam epitaxy. Implementation of an ultrathin amorphous SiO(x) mask on Si(111) facilitated epitaxial InAs nanowire growth, as confirmed by high-resolution x-ray diffraction 2 theta-omega scans and transmission electron microscopy. Depending on growth temperature (in the range of 400-520 degrees C) substantial size variation of both nanowire length and diameter was found under preservation of uniform, non-tapered hexagon-shaped geometries. The majority of InAs nanowires exhibited phase-pure zinc blende crystal structure with few defective regions consisting of stacking faults. Photoluminescence spectroscopy at 20 K revealed peak emission of the InAs nanowires at 0.445 eV, which is similar to 30 meV blueshifted with respect to the emission of the bulk InAs reference due to radial quantum confinement effects. These results show a promising route towards integration of well-aligned, high structural quality InAs-based nanowires with the desired aspect ratio and tailored emission wavelengths on an Si platform

In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry

We have investigated the Ga-adlayer mediated growth of GaN quantum dots at 707 degrees C on AlN (0001) by simultaneous use of in situ reflection high-energy electron diffraction and line-of-sight quadrupole mass spectrometry during rf-plasma assisted molecular beam epitaxy (PA-MBE). We have found that the Ga-adsorbate coverage of 1.0 ML (monolayer) is critical in the mediation of a fundamental change in the GaN Stranski-Krastanov (SK) growth mode on AlN. When the Ga-adsorbate coverage was less than 1.0 ML, the SK transition occurred during GaN growth. For larger Ga-adsorbate coverages, the SK transition occurred after the desorption of the Ga coverage in excess of 1.0 ML. We performed variable GaN coverage growth experiments followed by desorption of the Ga adsorbate and subsequent GaN thermal decomposition to determine that the critical GaN coverage for the SK transition was less than 2.0 ML under Ga-droplet PA-MBE growth conditions

Quadrupole mass spectrometry desorption analysis of Ga adsorbate on AIN (0001)

The authors have investigated the adsorption and subsequent desorption of Ga on AlN (0001) with line-of-sight quadrupole mass spectrometry (QMS). The authors present desorption data consistent with a continuous Ga-flux dependent accumulation of a laterally contracted Ga bilayer on AlN (0001) from 0 to 2.7 +/- 0.3 ML GaN equivalent coverage, and further Ga accumulation in macroscopic Ga droplets. The temperature dependence of Ga-adsorbate QMS desorption transients was investigated and the authors determined that the desorption activation energies for individual monolayers of the Ga adsorbate on AlN (0001) were similar to Ga desorption from GaN (0001). For the (first) pseudomorphic Ga-adsorbate monolayer on AlN, the authors measured a maximum Ga coverage of 1.0 +/- 0.1 ML and desorption activation energy of 6.2 +/- 0.3 eV. For the (second) laterally contracted Ga monolayer (1.7 +/- 0.3 ML) the desorption activation energy was 3.8 +/- 0.1 eV. (c) 2006 American Vacuum Society