Single event effects in static and dynamic registers in a 0.25−μ−m0.25-\mu-m CMOS technology

We have studied single event effects in static and dynamic registers designed in a quarter micron CMOS process. In our design, we systematically used guardrings and enclosed (edgeless) transistor geometry to improve the total dose tolerance. This design technique improved both the SEL and SEU sensitivity of the circuits. Using SPICE simulations, the measured smooth transition of the cross-section curve between LET threshold and saturation has been traced to the presence of four different upset modes, each corresponding to a different critical charge and sensitive area. A new architecture to protect the content of storage cells has been developed, and a threshold LET around 89 MeV cm/sup 2/ mg/sup -1/ has been measured for this cell at a power supply voltage of 2 V

FEC-CCS: A common Front-End Controller card for the CMS detector electronics

The FEC-CCS is a custom made 9U VME64x card for the CMS Off-Detector electronics. The FEC-CCS card is responsible for distributing the fast timing signals and the slow control data, through optical links, to the Front-End system. Special effort has been invested in the design of the card in order to make it compatible with the operational requirements of multiple CMS detectors namely the Tracker, ECAL, Preshower, PIXELs, RPCs and TOTEM. This paper describes the design architecture of the FEC-CCS card focusing on the special design features that enable the common utilization by most of the CMS detectors. Results from the integration tests with the detector electronics subsystems and performance measurements will be reported. The design of a custom made testbench for the production testing of the 150 cards produced will be presented and the attained yield will be reported

A 1.25 Gbit/s serializer for LHC data and trigger optical links

Several LHC detectors require high-speed digital optical links for data transmission in both data readout and trigger systems. Commercial components can be found that meet the bandwidth requirements of most of the LHC detectors subsystems. However, they fail to meet some of the requirements frequently encountered in the LHC-HEP environment, namely: resistance to high radiation doses and operation tolerant to single event upsets. To address these problems, a high-speed transmitter ASIC (1.2Gbit/s), containing a serializer and a clock multiplying PLL was developed. The prototype was implemented in a mainstream 0.25um CMOS technology and was designed using well-established radiation tolerant layout practices to achieve resistance to high radiation doses. This implementation serves as a base for the development of radiation tolerant IC’s that will make feasible the transmission of data using common local area networks protocols in typical LHC radiation hard environments. The ASIC was embedded in a test setup that uses a commercial optical receiver and de-serializer. Error free data transmission at 1.2Gbit/s was achieved proving the prototypes to be fully functional. 1

Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects

We discuss design issues related to the extensive use of Enclosed Layout Transistors (ELT's) and guard rings in deep submicron CMOS technologies in order to improve radiation tolerance of ASIC's designed for the LHC experiments (the Large Hadron Collider at present under construction at CERN). We present novel aspects related to the use of ELT's: noise measured before and after irradiation up to 100 Mrad (SiO/sub 2/), a model to calculate the W/L ratio and matching properties of these devices. Some conclusions concerning the density and the speed of IC's conceived with this design approach are finally drawn. (16 refs)